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    TRANSISTOR 1012 Search Results

    TRANSISTOR 1012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR 1012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    transistor 1012 F

    Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
    Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    BLV11

    Contextual Info: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    OT-123. BLV11 PDF

    transistor 1012

    Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
    Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220 PDF

    diode sy 400

    Abstract: sy 320 diode
    Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable


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    PHP10N40E T0220AB diode sy 400 sy 320 diode PDF

    bly87a

    Abstract: transistor c 1974
    Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    1002b BLY87A T-33-07 --j16 bly87a transistor c 1974 PDF

    Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


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    PHP10N4OE T0220AB PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    PDF

    transistor TIP3055

    Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.


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    TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055 PDF

    TLP421GB

    Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
    Contextual Info: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603 TLP421GB 11-5B2 VDE0884 EN60065EN60950 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    TLP421

    Abstract: TOSHIBA TUV 11-5B2 VDE0884 TLP421-2
    Contextual Info: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603hen TOSHIBA TUV 11-5B2 VDE0884 TLP421-2 PDF

    PH3230

    Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


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    PH3230 M3D748 OT669 PH3230 PDF

    sot3

    Abstract: marking 8A MUN5214T1
    Contextual Info: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    MUN5211T1 70/SOT sot3 marking 8A MUN5214T1 PDF

    TLP721F

    Abstract: 74285 e152349 TOSHIBA VDE E67349 TLP721
    Contextual Info: TLP721F TOSHIBA TOSHIBA PHOTOCOUPLER OFFICE MACHINE SWITCHING POWER SUPPLY GaAs IRED & PHOTO-TRANSISTOR TLP721F Unit in mm 4 The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP.


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    TLP721F TLP721F TLP721. E67349 E152349 UL1577 EN60065When 74285 e152349 TOSHIBA VDE E67349 TLP721 PDF

    MA3006

    Abstract: tlp731 E67349 TLP732 VDE0884
    Contextual Info: TLP731JLP732 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP731, TLP732 The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :


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    TLP731 TLP732 TLP731, TLP732 UL1577, E67349 EN60065 MA3006 E67349 VDE0884 PDF

    PH3230

    Abstract: SOT669-LFPAK sot669 package
    Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


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    PH3230 M3D748 OT669 PH3230 SOT669-LFPAK sot669 package PDF

    E67349

    Abstract: TLP733 TLP734 VDE0884
    Contextual Info: TLP733JLP734 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP733, TLP734 The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :


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    TLP733 TLP734 TLP733, TLP734 UL1577, E67349 EN60065 E67349 VDE0884 PDF

    Contextual Info: TLP550 3aAÄAs IRED & PHOTO-IC TENTATIVE DEGITAL LOGIC ISOLATION. 8 7 6 c 3 4 LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. 1 2 TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor.


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    TLP550 TLP550 2500Vrms E67349 --10C PDF

    pspice

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
    Contextual Info: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


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    HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1 PDF

    INVERTOR APPLICATION NOTE

    Contextual Info: GaAÔAs IRED & PHOTO-IC TLP550 DEGITAL LOGIC ISOLATION. LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor. TLP550 has no base connection, and is suitable


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    TLP550 TLP550 2500Vrms E67349 10C1E INVERTOR APPLICATION NOTE PDF

    Contextual Info: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.


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    HCPL-2503 HCPL-4502 6N136 6N135 HCPL-4502/HGPL-2503 6N136/5 C1946 74bbflSl C2D00 DQ0b03fl PDF