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    TRANSISTOR 10 SS 125 Search Results

    TRANSISTOR 10 SS 125 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR 10 SS 125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    photocoupleur

    Abstract: schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE SI9117 equivalente frequence diodes de regulation de tension transistor C8 renco
    Contextual Info: MISE EN ŒUVRE APPLICATIONS C onvertisseur à transistor de puissance intégré supportant 1 A. D5SCAM 1 R 3,3 nF 1,5 Q 82 pF 12. D 10 11 12 13 R 13 14 15 2,2 kil 16 SI9117 470 Q g NC •s e n s e V+ v cc V- SD V ref SYNC NI c csc FB R os c COMP ss 10 p1*


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    SI9117 fil-13 Si9117. photocoupleur schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE equivalente frequence diodes de regulation de tension transistor C8 renco PDF

    airbag control unit

    Abstract: gc352
    Contextual Info: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


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    STH60N10 STH60N10FI O-218 ISOWATT218 STH60N1 airbag control unit gc352 PDF

    marking "BSs"

    Contextual Info: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code


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    Q62702-S500 Q62702-S278 Q67000-S568 E6288 E6296 E6325 marking "BSs" PDF

    STV40N10

    Abstract: D073
    Contextual Info: i w S G S -T H O M S O N iH iC Tœ m ei S T V 4 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STV40N10 • . . . . . . . Vd ss 100 V RDS on < 0.04 a Id 40 A TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    STV40N10 STV40N10 7TSTS37 0068039-C DQ73A7b D073 PDF

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


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    BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN PDF

    BR 8050

    Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
    Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


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    BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S PDF

    2N1724

    Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
    Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15


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    0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489 PDF

    MTP8N45

    Contextual Info: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed


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    IRF340 MTP8N45 PDF

    CCD55-30

    Abstract: CCD05-30 7133B
    Contextual Info: CCD55-30 High Performance CCD Sensor FEATURES * 1252 H by 1152 (V) Pixel Format * 28 by 26 mm Active Area * Visible Light and X-Ray Sensitive * New Improved Very Low Noise Amplifier for Slow-Scan Systems and Large Signal Amplifier for Binned Operation *


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    CCD55-30 CCD55 CCD05-30 7133B PDF

    CCD55-30

    Abstract: 7858a equivalent 6612a Scientific Imaging Technologies CCD05
    Contextual Info: CCD55-30 Inverted Mode Sensor High Performance CCD Sensor FEATURES * 1252 H by 1152 (V) Pixel Format * 28 by 26 mm Active Area * Visible Light and X-Ray Sensitive * New Improved Very Low Noise Amplifier for Slow-Scan Systems and Large Signal Amplifier for Binned Operation


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    CCD55-30 CCD55 7858a equivalent 6612a Scientific Imaging Technologies CCD05 PDF

    siemens m

    Abstract: sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor CCD76-40
    Contextual Info: CCD76-40 Digital Intra-Oral X-ray Dental Sensor FEATURES The device is not designed for autoclaving but will withstand cleansing solutions defined within this data sheet. The package material is a conductive carbon fibre composite. * 1250 x 1640 Pixel Image Area


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    CCD76-40 DHA-PC14-3G DHA-HPD14-10 CCD76-40, siemens m sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor PDF

    Contextual Info: SM68CE256, SMJ68CE256 32,768 WORD BY 8-BIT STATIC RAMS J U L Y 1 9 8 7 - R E V IS E D N O V E M B E R 1987 • 32,768 x 8 Organization • Common I/O • Military Temperature Range . . . - 5 5 ° C to 125°C IM Suffix JD PACKAG E A14C 26 □ A 1 3 25 □ A 8


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    SM68CE256, SMJ68CE256 PDF

    Q62702-S654

    Contextual Info: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • V GS th = 1 . 5 . . . 2 . 5 V Type Vos h BSP 125 600 V 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) 45 Q Package Marking SOT-223 BSP 125


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    OT-223 Q62702-S654 Q67000-S284 E6327 E6433 OT-223 PDF

    TTK101

    Abstract: TTK101TK
    Contextual Info: TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 0.22±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation PD 100 mW Junction Temperature Tj 125 °C Tstg −55 to 125 °C


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    TTK101TK TTK101 TTK101TK PDF

    VQE 22 led

    Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface


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    RS481A CD207 MOCD208 VQE 22 led transistor sec 623 transistor sec 621 MOCD208 transistor D207 PDF

    TTK101MFV

    Contextual Info: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg


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    TTK101MFV TTK101MFV PDF

    IN5817 schottky diode symbol

    Abstract: IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D
    Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but


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    TC120 TC120 TC120-1 DS21365A IN5817 schottky diode symbol IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D PDF

    Contextual Info: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 Rating Unit VGDO -20 V IG 10 mA PD Note 1 150 mW Tj 125 °C Tstg −55 to 125 °C Gate-drain voltage Gate current Drain power dissipation Junction temperature


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    TTK101MFV PDF

    Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 4637fb com/LTM4637 PDF

    ATX 235

    Abstract: p-chanel mosfet atx 2003 ACPI Regulator-Controller all transistor capacitor 200uF 12V 2SD1802 RT9230 RT9231 RT9641A
    Contextual Info: RT9641A/B General Description Triple Linear Regulator Controller Support ACPI Control Interface Features The RT9641A/B, paired with either the RT9230 or RT9231 simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The IC


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    RT9641A/B RT9641A/B, RT9230 RT9231 16-pin 16-Lead ATX 235 p-chanel mosfet atx 2003 ACPI Regulator-Controller all transistor capacitor 200uF 12V 2SD1802 RT9231 RT9641A PDF

    K/SAC305 reflow bga

    Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator Features Description Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 4637fc com/LTM4637 K/SAC305 reflow bga PDF

    RT9641C

    Abstract: ATX 235 2SD1802 MMBT2907A RT9230 RT9231
    Contextual Info: RT9641C Triple Linear Regulator Controller Support ACPI Control Interface General Description The RT9641C, paired with either the RT9230 or RT9231 simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The IC integrates two linear controllers and a low-current pass


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    RT9641C RT9641C, RT9230 RT9231 16-pin 16-Lead DS9641C-02 RT9641C ATX 235 2SD1802 MMBT2907A RT9231 PDF

    VLP4045LT-4R7M

    Abstract: VLP4045LT-6R8M VLP4045 TMK316BJ106KL LMK212ABJ106KG VLP4045LT XC9246B75 XFL4020-332MEB XC9247B75 XC9247B65
    Contextual Info: XC9246/XC9247 Series ETR05024-004 16V Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-compatible •GENERAL DESCRIPTION XC9246/XC9247 series is a 16V step-down DC/DC converter with a built-in driver transistor. The series provides high


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    XC9246/XC9247 ETR05024-004 XC9246 VLP4045LT-4R7M VLP4045LT-6R8M VLP4045 TMK316BJ106KL LMK212ABJ106KG VLP4045LT XC9246B75 XFL4020-332MEB XC9247B75 XC9247B65 PDF

    Step-Down

    Abstract: 16V Step-Down DC/DC Converter XC9246 XC9247
    Contextual Info: XC9246/XC9247 Series ETR05024-005a 16V Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-compatible •GENERAL DESCRIPTION XC9246/XC9247 series is a 16V step-down DC/DC converter with a built-in driver transistor. The series provides high


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    XC9246/XC9247 ETR05024-005a Step-Down 16V Step-Down DC/DC Converter XC9246 XC9247 PDF