TRANSISTOR 08 Search Results

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

65C6600

Abstract: ipa65r600c6 TRANSISTOR SMD MARKING CODE 2A IPx65R600C6 ID32 MOSFET TRANSISTOR SMD MARKING CODE 11 IPI65R600C6 infineon marking TO-252 IPD65R600C6 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R600C6 Data Sheet Rev. 2.0, 2010-08-19 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6

6R600C6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6

65C6600

Abstract: IPA65R600C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R600C6 Data Sheet Rev. 2.0, 2010-08-19 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6

6R380C6

Abstract: CoolMOS Power Transistor 6R380C6 g1 TRANSISTOR SMD MARKING CODE SMD mosfet MARKING code C6 CoolMOS Power Transistor SMD TRANSISTOR MARKING code TC IPA60R380C6 TRANSISTOR SMD MARKING CODE IPB60R380C6 IPD60R380C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6

65E6280

Abstract: IPx65R280E6 JESD22 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.1, 2010-08-16 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPP65R280E6, IPW65R280E6 Description

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

6R070C6 MOSFET TRANSISTOR

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 0.9, 2009-08-10 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description

6R380C6

Abstract: CoolMOS Power Transistor 6R380C6 IPD60R380C6 IPA60R380C6 SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE IPB60R380C6 smd transistor c6 15 6r380 CoolMOS Power Transistor
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6

6R600C6

Abstract: IPA60R600C6 IPD60R600C6 IPP60R600C6 6R600 Diode SMD SJ 19 IPB60R600C6 JESD22 transistor smd code marking SJ
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6

6R380C6

Abstract: CoolMOS Power Transistor 6R380C6 6r380 SMD mosfet MARKING code C6 6R38 SMD TRANSISTOR MARKING code TC IPD60R380C6 mosfet 600v 48a IPB60R380C6 transistor smd code marking SJ
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6

6R600C6

Abstract: IPD60R600C6 TRANSISTOR SMD MARKING CODE infineon marking TO-252 IPA60R600C6 IPP60R600C6 6R600c c6 transistor MOSFET TRANSISTOR SMD MARKING CODE 7 IPB60R600C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6

6r950c6

Abstract: infineon marking TO-252 IPx60R950C6 SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.0, 2009-08-28 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise

PT 4304 a transistor

Abstract: 2SC3587 noise diode
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise

transistor NEC D 586

Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise

PDTA123ET

Abstract: PDTC123ET marking code 10 sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES

PDTC124EU

Abstract: PDTA124EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES

JC327

Abstract: JC327-25 JC337 SC-43A jC32725
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC327 PNP general purpose transistor Product specification Supersedes data of 1999 Apr 27 2004 Dec 08 Philips Semiconductors Product specification PNP general purpose transistor JC327 FEATURES PINNING

Contextual Info: DISCRETE SEMICONDUCTORS DAT ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor PBR941

PDTC* MARKING CODE

Abstract: marking code 10 sot23 PDTA124ET PDTC124ET PDTA12
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES

BP317

Abstract: PDTC123JT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES