TRANSISTO MOS Search Results

BU206

Abstract: BU205 BU205 equivalent BU204 LC2D
Contextual Info: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R

SM 4108

Abstract: TOPFETs FETs 484 am marking codes medium power transistors RS 432
Contextual Info: Concise Catalogue 1996 Philips Semiconductors Discrete semiconductors CONTENTS page SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER Sm all-signal bipo lar transisto rs .4-5

YTF523

Contextual Info: FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli YTF523 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 03.6 ±0.2 DRIVE APPLICATIONS. . Low Drain-Source ONResistance

2SK1583

Abstract: IEI-1213 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET M OS FIELD EFFECT TRANSISTO R 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm

28S DIODE

Abstract: 2SK672 hc 175
Contextual Info: 2SK672 FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 03.6 ±0.2 DRIVE APPLICATIONS. 13 2 . Low Drain-Source ON Resistance

Contextual Info: TECHNOLOGY OVERVIEW N-CHANNEL ENHANCEM ENT MODE POWER MOS TRANSISTO RS SG S-THOMSON series of POWER MOS transis­ tors öfters an extremely broad variety of devices covering the voltage range from 50 V to 1000 V with low on-resistance RDSion in different package and

Contextual Info: International pd-9 a igR]Rectifier_ IRGMC30F INSULATED GATE BIPOLAR TRANSISTO R Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

2SK1333

Contextual Info: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:

LI 20 AB

Abstract: TSD2904 SGS 7301 M113
Contextual Info: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Feme Relays

Abstract: Feme Relays 001
Contextual Info: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTO R 2SK1593 N-CHANNEL MOS FET FOR SW ICHING The 2SK1593, N-channel vertical type MOS FET, is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output o f ICs having a 5 V power source.

BUK7514-60

Abstract: T0220AB
Contextual Info: Objective specification Philips Sem iconductors TrenchM O S transisto r Standard level FET G ENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: TO SHIBA 2SK2963 TO SH IBA FIELD EFFECT TRANSISTO R SILICON N CH ANN EL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATION S INDUSTRIAL APPLICATIONS DC-DC CONVERTER, R E LA Y DRIVE AN D M OTOR DRIVE APPLICATIO N S 4V Gate Drive Low Drain-Source ON Resistance

2SC2703

Contextual Info: TOSHIBA 2SC2703 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2703 AU D IO POW ER AM PLIFIER APPLICATIONS. High DC Current Gain : h p g = 100~320 MAXIMUM RATINGS (Ta= 2 5 °C ) CHARACTERISTIC SYM BOL RATING UNIT Collector-Base Voltage VCBO

Contextual Info: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

NEC 2SK1273

Contextual Info: DATA SHEET NEC / / 2SK1273 M O S FIELD EFFECT TRANSISTO R N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1273, N-channel vertical type MOS FET, is a switching device which can be driven directly by the o utp ut o f ICs having a 5 V

saa 7321

Contextual Info: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail­

MBH60D-090A

Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
Contextual Info: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications

TC-2461

Contextual Info: I'i4 ì Ci S H E E ! MOS FIELD EFFECT POWER TRANSISTORS 2SJ326,2SJ326-2 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2 S J3 2 6 is P-channel M O S Field Effect Transisto r de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, m otor and lam p driver.

Contextual Info: DATA SHEET IMEC / M O S FIELD EFFECT TRANSISTO R 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a sw itching device which can be driven directly by a PACKAGE DRAW INGS in millimeter 2.5 V pow er source. The M O S FET has excellent switching characteristics and is suitable

Contextual Info: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

STP5N50D

Contextual Info: SGS-THOMSON STP5N50D N - CHANNEL ENHANCEMENT MODE FREDFET PRELIMINARY DATA TYPE V dss r R ds om I S T P 5 N 5 0 D _5 0 0 V . . . . . 1 .5 i i Id ^ 5 A POWER MOS TRANSISTO R W ITH FAST REC OVERY BULK DIODE: CO M PLETE DIODE SPECIFICATIO N PARTIC ULARLY SUITABLE FOR BRIDGE

Contextual Info: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is

2SK1583

Abstract: IEI-1213 MEI-1202
Contextual Info: DATA SHEET M OS FIELD EFFECT TRANSISTO R 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2S K 15 83 is an N-channel vertical type MOS F E T which can be driven by 2 .5 V power supply. As the MOS F E T is driven by low voltage and does not require con­