117L7
Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.
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19jn8117l72e226jv6+76bm812ec86au5gt6hf56gh8a6hb512u7
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EN555
Abstract: Design 1000W inverter using 2 parallel transformer PN3207 inverter transformer 1000W overcurrent inverter protection inverter 500w INVERTER TRANSFORMERS design ups RECTIFIER GUIDE 1000w inverter PF1000A-360
Contextual Info: Pm m . -bïïî? sm tR tsles PFC Modules PF Series Power Factor Correction. These 90% efficient 500W and 1000W PFC modules are Rectifier Modules DC-DC Transformer Modules EMI Filter Modules IEC/EN555-2 compliant, ensuring worldwide operation. They have integral diagnostics, auxiliary
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iec/en555-2pt-500pr500170-265vac+16pf1000pn1200f/pn1210f/pn1215fpn1207fonlypn1207fpn121pn1215fen555design 1000w inverter using 2 parallel transformerpn3207inverter transformer 1000wovercurrent inverter protectioninverter 500winverter transformers designups rectifier guide1000w inverterpf1000a-360
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365 pF variable capacitor
Abstract: D3179 theta-j solid LT1011CL CAPACITOR 365pf LT1011MJG LT1011ACP lt1011
Contextual Info: •Ill LT1011, LT1011A VOLTAGE COMPARATORS D3179, JANUARY 1989 JG OR P PACKAGE Low Input Offset Voltage. . . 1.5 or 0.5 mV Max TOP VIEW Maximum Input Bias C urrent. . . 50 or 25 nA nvcc+ Low Input Offset Current. . . 4 or 3 nA Max D b a l /s tr o b e Output Response Time . . . 250 ns Max
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lt1011lt1011ad3179lm111+76s5012365 pf variable capacitortheta-j solidlt1011clcapacitor 365pflt1011mjglt1011acp
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pnp 2N3906 beta
Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION
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2n33952n33962n33972n3398+112n29262n44012n44022n4403mps2713mps2714pnp 2n3906 beta2n4058n3904to-92hsd29e2-j1
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2SK608
Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
Contextual Info: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü
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a721wma3000-2sk608d717y+82sc48942sk1216c39672sc39672sk316ma151wk2sk1232sc4238
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38759
Abstract: COI545I
Contextual Info: " ^ S T S E S T B r ì R r 1" 0 ffl <r <\l K> 1 t - U1 -0 o V ._. V) 5 MICRO SWITCH DT-2R-B6 SW ITCH -BASIC A WWW* tf MRUMUS’MffyWBl KMITPK CftMIY fäfröif/iumott ED. M F R . C O D E 91929 “ S tr w XD .9 I 7 ±.OIO I er. CM .140 i n n ? d i a h o l e
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coi545ic017t07c0t7723c0-30659+2c03752838759
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Diode GP 514
Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
Contextual Info: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF
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2n3904ta/39042n3906/3906at2n4400/44012n4402/4403+162n65152n65172n652qksp05/06ksp10ksp13diode gp 514pnp 500vka9282bdarlington 1a 60v npn to922n3904tadarlington 3a 100v npn to928a sot23sot23 npnka9220bdiode 60v 8a
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VPS05604
Abstract: H21E
Contextual Info: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4 High current gain 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1
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3904pnvps05604eha07177ot-363+5ehp00763ehp00764aug-04-1999ehp00757h21e
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3904
Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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100mavps05161ot-23oct-14-1999+13ehp00763ehp00764ehp00757ehp007583904marking s1a" sot-23transistor 39041n9163906 pnptransistor 39063904 transistor npnh12e3904 sot23
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h11e
Abstract: SMBT3904UPN
Contextual Info: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177
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3904uvpw09197eha07177sc-74+6ehp00763ehp00764oct-14-1999ehp00757h11esmbt3904upn
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ic power 22E
Abstract: 1N916
Contextual Info: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)
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3906u100ma3904uvpw09197+7eha07175sc-74ehp00773ehp00764oct-14-1999ic power 22e1n916
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VPS05604
Contextual Info: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C
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3904pnvps05604q62702-cot-363+2ehp00757ehp00760
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ic power 22E
Abstract: 3904U power 22E IC 1N916
Contextual Info: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)
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3904u100ma3906uvpw09197+8eha07178sc-74ehp00763ehp00764oct-14-1999ic power 22epower 22e ic1n916
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ic power 22E
Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)
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3906s100ma3904svps05604+8eha07175ot-363ehp00773ehp00764jan-26-1998ic power 22esmbt 3904s1n916
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Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)
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3904s3906svps05604eha07178+3q62702-a1201ot-363ehp00756
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3904
Abstract: transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP
Contextual Info: PZT 3904 NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP 3 2 1 Type Marking PZT 3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C
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100mavps05163ot-223soehp00710+12ehp00711ehp00293ehp00712oct-13-19993904transistor 3904 npn3904 transistor pnp3904 transistorb 3904transistor 3904 npn datasheet1n9163906 pnp
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3904
Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
Contextual Info: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings
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q68000-a8396ot-893904transistor 3904+5tr 39043904 npn3904 transistortransistor 3904 npn datasheet3904 transistor npn
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Q62702-A1202
Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
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3906s100ma3904svps05604+7ot-363q62702-a1202ehp00773ehp00764sep-07-1998smbt 3904s1n916
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3904S
Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)
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3904s100ma3906svps05604+8ot-363q62702-a1201ehp00764sep-07-199839041n9165b1 transistorvps0560
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3904 TRANSISTOR PNP
Abstract: 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a
Contextual Info: NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904
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q68000-a4416ot-233904 transistor pnp3904+8transistor 3904h12e3904 npn3904 sottr 39043904 transistortransistor 3904 npn datasheettransistor marking s1a
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3904S
Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)
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3904s100ma3906svps05604+5eha07178q62702-a1201ot-363wi fimarking code transistor hk
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transistor c 3906
Abstract: 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906
Contextual Info: PZT 3906 PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C
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100mavps05163ot-223ehp00714+10ehp00302ehp00715oct-13-1999transistor c 39063906 transistor npntransistor 39063906pnp 39061n916transistor pnp 3906
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3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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100mavps05161ot-23ehp00772+11ehp00773oct-14-1999ehp00768ehp007693906transistor 3906k0300h12e1n9163906 pnpic power 22e
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H12E
Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
Contextual Info: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906
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q68000-a4417ot-23h12eh11e+639063906 transistor npntransistor 3906s2a sot23pnp 3906 sot233904 sot
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