TR 3904 Search Results

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

EN555

Abstract: Design 1000W inverter using 2 parallel transformer PN3207 inverter transformer 1000W overcurrent inverter protection inverter 500w INVERTER TRANSFORMERS design ups RECTIFIER GUIDE 1000w inverter PF1000A-360
Contextual Info: Pm m . -bïïî? sm tR tsles PFC Modules PF Series Power Factor Correction. These 90% efficient 500W and 1000W PFC modules are Rectifier Modules DC-DC Transformer Modules EMI Filter Modules IEC/EN555-2 compliant, ensuring worldwide operation. They have integral diagnostics, auxiliary

365 pF variable capacitor

Abstract: D3179 theta-j solid LT1011CL CAPACITOR 365pf LT1011MJG LT1011ACP lt1011
Contextual Info: •Ill LT1011, LT1011A VOLTAGE COMPARATORS D3179, JANUARY 1989 JG OR P PACKAGE Low Input Offset Voltage. . . 1.5 or 0.5 mV Max TOP VIEW Maximum Input Bias C urrent. . . 50 or 25 nA nvcc+ Low Input Offset Current. . . 4 or 3 nA Max D b a l /s tr o b e Output Response Time . . . 250 ns Max

pnp 2N3906 beta

Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION

2SK608

Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
Contextual Info: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü

38759

Abstract: COI545I
Contextual Info: " ^ S T S E S T B r ì R r 1" 0 ffl <r <\l K> 1 t - U1 -0 o V ._. V) 5 MICRO SWITCH DT-2R-B6 SW ITCH -BASIC A WWW* tf MRUMUS’MffyWBl KMITPK CftMIY fäfröif/iumott ED. M F R . C O D E 91929 “ S tr w XD .9 I 7 ±.OIO I er. CM .140 i n n ? d i a h o l e

Diode GP 514

Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
Contextual Info: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF

VPS05604

Abstract: H21E
Contextual Info: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1

3904

Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

h11e

Abstract: SMBT3904UPN
Contextual Info: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array
High current gain 4 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177

ic power 22E

Abstract: 1N916
Contextual Info: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)

VPS05604

Contextual Info: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C

ic power 22E

Abstract: 3904U power 22E IC 1N916
Contextual Info: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)

ic power 22E

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)

Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)

3904

Abstract: transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP
Contextual Info: PZT 3904 NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP 3 2 1 Type Marking PZT 3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C

3904

Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
Contextual Info: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

Q62702-A1202

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

3904S

Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)

3904 TRANSISTOR PNP

Abstract: 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a
Contextual Info: NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904

3904S

Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)

transistor c 3906

Abstract: 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906
Contextual Info: PZT 3906 PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C

3906

Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

H12E

Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
Contextual Info: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906