TR/U/2N2219A ST Search Results

2N2222A

Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to

Contextual Info: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec

2N2905 2N2219

Abstract: 2n2219 2N2219A Transistor 2N2219A UHF power TRANSISTOR PNP TO-39 2N2219A philips 2N2905A RS 2N2219 2N2905
Contextual Info: Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • High-speed switching

2n2219

Contextual Info: 2N2219 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope w ith the collector connected to the case. They are primar­ ily intended fo r high speed switching. The 2N2219 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.

2N2219 transistor

Abstract: Transistor 2N2219A 2n2219 2N221 2N2219A Silicon Epitaxial Planar Transistor philips 1N916 9L9V 2N2219/BC547 hie hre hfe
Contextual Info: 11 N AUER PHILIPS/DISCRETE blE D • h t,S 3 1 3 1 > DDEÖDBl 34T ■ APX A ZN’^ y 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -39 m etal envelope w ith th e c o lle c to r connected t o th e case. T he y are p rim a r­ ily intended fo r high speed switching. The 2N 2 2 1 9 is also suitable f o r d.c. and v .h .f./u .h .f. am plifiers.

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to

2N2222A motorola

Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
Contextual Info: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc

2N2219

Abstract: 2N2219A Transistor 2N2219A 2N2218-2N2219 2N2218 2N2219 transistor 2N2218A 2N22l8 2N22L 2N2219A NPN
Contextual Info: Data Sheet Central" 2N 22 18 2N2218A 2N22 19 2N2219A Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN S il ic on T r a n s i s t o r M anufacturers of World Class Discrete Semiconductors J EDEC T O - 3 9 Cas e

s parameters of 2N2222

Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
Contextual Info: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c

2N22A

Abstract: 2N2216A 2M2219A 2N229 7N221 2N2210A 2N2A 2M2I 2N2210 7H22
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2218JAN, JTX, JTXV 2N2218AJAN, JTX, JTXV 2N2219JAN, JTX, JTXV 2N2219AJAN, JTX, JTXV, JANS CRYSTAIONCS 2805 V e ie r » * H ighw ay Processed per MIL-S-19500/251 Suite 14 Ronkorkorns N Y. 1177fc NPN Silicon Small-Signal Transistors

2N2217

Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Contextual Info: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA

N2222A

Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
Contextual Info: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

2222A

Abstract: 2n h 2222a 2221A 2219a 2222a NPN 2n2222a 2N2219A 2N2218A 2222A transistors
Contextual Info: 2N 2218 A 2N 2219 A 2N 2221A SILICON PLANAR NPN • “ *» HIGH-SPEED SWITCHES The 2N 2218A, 2N-2219A, 2N 2221 A and 2N 2222A are silicon planar epitaxial NPN tran­ sistors in Jedec TO-39 for 2N 2218A and 2N 2219A and in Jedec T O -18 (for 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col­

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

fairchild 2N2222A

Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Contextual Info: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

ST3904

Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

PIC900

Abstract: MT-2605-102CE power amplifier for servomotor driver ufn533 2N2905a equivalent 100rpm DC motor 100RPM 2N2905A UC1637 PiC90
Contextual Info: U-102 APPLICATION NOTE UC1637/2637/3637 SWITCHED MODE CONTROLLER FOR DC MOTOR DRIVE INTRODUCTION There is an increasing demand today for motor control circuits, as a result of the incredible proliferation of automated position control equipment, which is itself made