TR/1FT TRANSISTOR Search Results

2N3904

Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Contextual Info: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

et1600

Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Contextual Info: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection

OA606

Contextual Info: /T ra n sisto rs DTB123TK DTB123TK Digital Transistors Includes Resistors 7 f/ T r a n s is to r Switch • • « ä 1) / W T X fflO fiÔ L É r t iK L T t'-S /c tb , ^ fä H / D im e n sio n s (Unit : mm) (1) Emitter (2) Base (3) Collector A m w ftftl-H m ti L T -l >

mosfet low vgs 1A

Contextual Info: 2SK1973F5 h y V v 7»$ /Transistors 2SK 1973F5 y ij □ > N f * * Jl MOS K7 > y 2 2 Silicon N-channel MOSFET ^ < y ^ /Switching • i'i-ffi^'Ü H /D im en sio n s U n it: mm 1) 1ft* 2) i S i i X - f v ^ ^ ^ t " — Ko 3) SOA 4) iE i* [is & * ''fs a m o 5)

1Ft TRANSISTOR

Abstract: tr/1Ft TRANSISTOR
Contextual Info: TOSHIBA TPC8002 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8002 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)“ H -5 m n (Typ.) High Forward Transfer Adm ittance: |Yfs| = 15S (Typ.)

70910

Abstract: transistor cny CNY17F-1X E91231
Contextual Info: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a

2SC4458

Contextual Info: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process

1518 B TRANSISTOR

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

f0r1a

Abstract: tt 18934 2SK786 Transistor S1D F0R1 111IN
Contextual Info: 6427525 Tfl N E C ELECTRONICS D Ë | b M 27525 INC Ü Q 1 AT34 gsQ 13934 T-39-13 q T . PRELIMINARY SPECIFICATION MOS FIELD EFFECT ELECTRON DEVICE TRANSISTOR 2SK786 FAST SWITCHING N - C H A N N E L S I L I C O N POWER MOS Features Suitable for switching power supplies,

TC74HC4538P

Abstract: Mono stable
Contextual Info: TOSHIBA LO GI C/M EMO RY 116 O I 1017349 QOlfltlS l | TC74HC4538P/F T - S m TC74HC4538P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC4538 Is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2M0S technology. It achieves the high speed operation similar to equivalent

16N05L

Abstract: RFD16N05L 16N05
Contextual Info: m H a rris uj s e m ic o n d u c to r June 19 9 2 R F D 16N 05 L R F D 16 N 0 5 L S M N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-251 AA TOP VIEW • 1 6 A .5 0 V • r DS(ON) = 0.047Q • UIS SOA Rating Curves (Single Pulse)

Contextual Info: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­

JI32

Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
Contextual Info: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS

CD45118

Abstract: CD4511B Types DR2000 vdf displays units RCA-2N3053 Common-cathode 7-segment LED display 7 segment displays cd4511 numitron dr2000 numitron common cathode 7 segment display
Contextual Info: CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V o lt Rating • # DISPLAY a/ Z 3 H5b 7 B *7 4 5 6 The CD4511B types are BCD-to-7-segment latch decoder drivers constructed with CM O S logic and n-p-n bipolar transistor out­

Contextual Info: m m o a CM150E3U-24H x Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD U-Series Module 150 Amperes/1200 Volts Tq Measured Description: -1 = 1 Î c I 1= 1 1= 1 H Powerex Chopper IGBTMOD™ Modules are designed for use in

Avantek uto 512

Abstract: ANA 658 Avantek amplifier Avantek* UTC AVANTEK utc Avantek rf amplifier RF power amplifier 49 MHz AVANTEK TO-8 Avantek amplifier UTC
Contextual Info: AVANTEK Q INC a v a MME n t b » H . . k HMVîbb 0 0 0 7 e]? 1 !A V A . UTO/UTC 512 Series ,. Thln-Fllm Cascadable Amplifier 5 to 500 MHz o\ FEATURES APPLICATIONS • • • • • IF/RF Amplification Frequency Range: 5 to 500 MHz Medium Gain: 20.0 dB Typ

Contextual Info: SILICON MONOLITHIC BIPO LAR LINEAR INTEGRATED CIRCUIT TA8006ASN 5V V O L T A G E R E G U L A T O R W IT H W A T C H D O G T IM E R The TA8006ASN is an 1C specially designed for microcomputer systems. It incorporates a highly accurate coristant-voltage power supply 5 ± 0.1V and various

K2400F1

Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
Contextual Info: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region

se5020

Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Contextual Info: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES

2N404

Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
Contextual Info: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .

VPA05

Contextual Info: I Ordering number: EN3S26 FBET Hybrid 1C VPM04 Video Pack, Three-channel, RGB Video Output Amplifier for Medium-resolution CRT Displays No. 3526 SA%YO F i / / / .f •j OVERVIEW 4 X . ,.:s ' :v ".vt-Äs. It "X > ' PINOUT The VPM04 is a composite, three-channel, video output

2SC1412

Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Contextual Info: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type

Contextual Info: NJL5196K/97K GENERAL PURPOSE PHOTO REFLECTOR • GENERAL DESCRIPTION The NJL5196K/5197K are super miniature and super thin general purpose photo reflectors, which can be soldering by reflow-method. These are compatible to NJL5181K/5183K in the characteristics, and attain high

D1302

Abstract: D1303 FM1111 2N2620 D1185 MPF1000 D1103 BFX78 MFE2098 TIXS79
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T