TP3724 Search Results

Contextual Info: TP3724 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)1.7uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

BF189

Abstract: NT2222 BSY21 TP3300 BF234 bf310 JE9101A 2sc2787l PE254 PE254C
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO , 5 10 15 20 25 30 35 40 45 50 55 60 70 75 80 85 90 fr (V) (Hz) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 3U 30 30 30 30 30 30 30 30 30 ~~~;~P ~eelnoex BC413P BC413C BC413CP GES2221

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain