TP252 Search Results
TP252 Datasheets (18)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP252 | Unknown | Cross Reference Datasheet | Scan | 31.9KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 34.6KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 75.54KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2520 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 28.81KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2520 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 463.52KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2520N8 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2520N8-G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 0.26A SOT89-3 | Original | 603.6KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2522 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 28.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2522 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 463.52KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2522N8 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2522N8-G | Supertex | P-Channel Enhancement Mode Vertical DMOS FETs | Original | 581.62KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2522ND | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252A | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252A | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP252B | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252B | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252CA | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252CA | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 |
TP252 Price and Stock
KOA Speer Electronics Inc RN73R1ETTP2520B25RES 252 OHM 0.1% 1/16W 0402 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN73R1ETTP2520B25 | Digi-Reel | 8,990 | 1 |
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KOA Speer Electronics Inc RN73R1ETTP2521B25RES 2.52K OHM 0.1% 1/16W 0402 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN73R1ETTP2521B25 | Digi-Reel | 7,940 | 1 |
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Microchip Technology Inc TP2520N8-GMOSFET P-CH 200V 260MA TO243AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TP2520N8-G | Cut Tape | 3,466 | 1 |
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TP2520N8-G | Bulk | 7 Weeks | 2,000 |
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TP2520N8-G | 4,334 |
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TP2520N8-G | 2,000 | 2,000 |
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TP2520N8-G | Reel | 2,000 |
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TP2520N8-G | Reel | 50,000 | 7 Weeks |
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TP2520N8-G | 4,057 |
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TP2520N8-G | 1 |
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TP2520N8-G | 278 |
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TP2520N8-G | 2,000 |
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TP2520N8-G | 3,897 |
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Conductive Containers Inc TP2525TACKI PAK 2 9/16 X 2 9/16 X 1/2" |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TP2525 | Bulk | 177 | 1 |
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OMRON Industrial Automation XW5T-P2.5-2.2-1TERM BLK PUSHIN 2.5MM 2:2 1TIER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XW5T-P2.5-2.2-1 | Bulk | 31 | 1 |
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XW5T-P2.5-2.2-1 | Bulk | 529 | 1 |
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XW5T-P2.5-2.2-1 | Bulk | 5 | 1 |
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TP252 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) |
OCR Scan |
TP2516 TP2520 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V TP2516/TP2520 | |
TP2522Contextual Info: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
TP2522 TP2522 A020309 | |
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2522 125pF DSFP-TP2522 B091408 | |
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707 | |
TA 7139
Abstract: TA 7139 P
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Original |
TP2520 TP2522 -200V -220V OT-89. O-243AA* TP2520N8 TP2522N8 TP2522ND 200pF TA 7139 TA 7139 P | |
TP2522ND
Abstract: TP2522 TP2522N8-G
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Original |
TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G | |
Contextual Info: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
TP2522 125pF DSFP-TP2522 C081413 | |
TP2520Contextual Info: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
TP2520 TP2520 A020309 | |
TP2520Contextual Info: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
TP2520 TP2520 A031610 | |
A10150
Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
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Original |
TP2522 125pF O-243AA OT-89) O-243, A101507 A10150 TO243AA TP2522 TP2522N8-G TP2522ND A101507 | |
TP2520
Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
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TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C | |
Contextual Info: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile |
OCR Scan |
TP2520 TP2520 | |
TP2520N8-GContextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G | |
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
TP2522 125pF DSFP-TP2522 B022309 | |
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marking TP5C
Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
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TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA marking TP5C TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND | |
Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
TP2520 125pF C081413 | |
TA 7139 PContextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q |
OCR Scan |
TP2520 TP2522 -200V -220V O-243AA* TP2520N8 TP2522N8 TP2520ND 125pF TP2520/TP2522 TA 7139 P | |
TO-243AA
Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
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Original |
TP2520 125pF O-243AA OT-89) O-243, A101507 TO-243AA TN2520N8-G TP2520 tp5cw jedec package TO-243AA | |
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
TP2520 125pF B022309 | |
Contextual Info: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N ) |
OCR Scan |
TP2516 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V OT-89. TP2516/TP2520 | |
TP2522Contextual Info: Supertex inc. TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
TP2522 TP2522 A031610 | |
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 | |
TP2520
Abstract: tp5cw TP5C
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Original |
TP2520 125pF B022309 TP2520 tp5cw TP5C | |
b0914Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF B091408 b0914 |