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    TP252 Search Results

    TP252 Datasheets (18)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TP252
    Unknown Cross Reference Datasheet Scan PDF 31.9KB 1
    TP252
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 34.6KB 1
    TP252
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 75.54KB 1
    TP2520
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 28.81KB 4
    TP2520
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 463.52KB 4
    TP2520N8
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP2520N8-G
    Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 0.26A SOT89-3 Original PDF 603.6KB
    TP2522
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 28.67KB 4
    TP2522
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 463.52KB 4
    TP2522N8
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP2522N8-G
    Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF 581.62KB 5
    TP2522ND
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP252A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252A
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    TP252B
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252B
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    TP252CA
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252CA
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    SF Impression Pixel

    TP252 Price and Stock

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    KOA Speer Electronics Inc RN73R1ETTP2520B25

    RES 252 OHM 0.1% 1/16W 0402
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    DigiKey () RN73R1ETTP2520B25 Cut Tape 7,790 1
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    RN73R1ETTP2520B25 Digi-Reel 7,790 1
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    RN73R1ETTP2520B25 Tape & Reel 10,000
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    KOA Speer Electronics Inc RN73R1ETTP2521B25

    RES 2.52K OHM 0.1% 1/16W 0402
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    DigiKey () RN73R1ETTP2521B25 Cut Tape 7,495 1
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    RN73R1ETTP2521B25 Digi-Reel 7,495 1
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    Microchip Technology Inc TP2520N8-G

    MOSFET P-CH 200V 260MA TO243AA
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    DigiKey () TP2520N8-G Cut Tape 2,915 1
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    TP2520N8-G Digi-Reel 2,915 1
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    TP2520N8-G Tape & Reel 2,000 2,000
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    Avnet Americas TP2520N8-G Tape & Reel 4 Weeks 2,000
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    Mouser Electronics () TP2520N8-G 4,171
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    TP2520N8-G 4,071
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    Verical TP2520N8-G 2,000 2,000
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    Newark TP2520N8-G Tape & Reel 2,000
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    Bristol Electronics TP2520N8-G 4,057
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    TME TP2520N8-G 1
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    Master Electronics TP2520N8-G 3,897
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    Conductive Containers Inc TP2525

    TACKI PAK 2 9/16 X 2 9/16 X 1/2"
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    DigiKey TP2525 Bulk 89 1
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    Conductive Containers Inc PTP2525-375

    TACKI PAK PEDESTAL 2-9/16 X 2-9/
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    DigiKey PTP2525-375 Bulk 40 1
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    TP252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)


    OCR Scan
    TP2516 TP2520 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V TP2516/TP2520 PDF

    TP2522

    Contextual Info: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TP2522 TP2522 A020309 PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2522 125pF DSFP-TP2522 B091408 PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707 PDF

    TA 7139

    Abstract: TA 7139 P
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    TP2520 TP2522 -200V -220V OT-89. O-243AA* TP2520N8 TP2522N8 TP2522ND 200pF TA 7139 TA 7139 P PDF

    TP2522ND

    Abstract: TP2522 TP2522N8-G
    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G PDF

    Contextual Info: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    TP2522 125pF DSFP-TP2522 C081413 PDF

    TP2520

    Contextual Info: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TP2520 TP2520 A020309 PDF

    TP2520

    Contextual Info: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    TP2520 TP2520 A031610 PDF

    A10150

    Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2522 125pF O-243AA OT-89) O-243, A101507 A10150 TO243AA TP2522 TP2522N8-G TP2522ND A101507 PDF

    TP2520

    Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C PDF

    Contextual Info: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile


    OCR Scan
    TP2520 TP2520 PDF

    TP2520N8-G

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    TP2522 125pF DSFP-TP2522 B022309 PDF

    marking TP5C

    Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA marking TP5C TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND PDF

    Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    TP2520 125pF C081413 PDF

    TA 7139 P

    Contextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q


    OCR Scan
    TP2520 TP2522 -200V -220V O-243AA* TP2520N8 TP2522N8 TP2520ND 125pF TP2520/TP2522 TA 7139 P PDF

    TO-243AA

    Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2520 125pF O-243AA OT-89) O-243, A101507 TO-243AA TN2520N8-G TP2520 tp5cw jedec package TO-243AA PDF

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    TP2520 125pF B022309 PDF

    Contextual Info: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )


    OCR Scan
    TP2516 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V OT-89. TP2516/TP2520 PDF

    TP2522

    Contextual Info: Supertex inc. TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    TP2522 TP2522 A031610 PDF

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 PDF

    TP2520

    Abstract: tp5cw TP5C
    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2520 125pF B022309 TP2520 tp5cw TP5C PDF

    b0914

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    TP2520 125pF B091408 b0914 PDF