TP23 Search Results

Contextual Info: MOTOROLA O rder this docum ent by M TP23P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP23P06V TMOS V™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TM OS POWER FET 23 AMPERES 60 VOLTS

Contextual Info: 5 4 3 2 1 REVISION HISTORY TP9 VDD33 TP17 VDD25 GND TP23 INTVCC/EXTVCC TP7 VIN VDD25 VIN C13 150uF 35V C17 0.22uF DESCRIPTION 1 OPT APPROVED PRODUCTION DATE YI S. 1-24-11 2 EXTVCC_DRV C6 100nF D2 D1 VIN 1 + TP37 R60 1 R52 2 C5 4.7uF REV _ INTVCC TP36 6.5V - 24V

P109C

Abstract: GPI06 lcd003 K3456
Contextual Info: aMíFftr"1' N ú P i I '[:L ' ü i p II P ii S O H PO IPELIN EB U R S TS R O H ,i"' 5 i«jO ocu nt*P SISSS«i/SS95 ir II lili .F . I L «T0J 3 S.3. “ ' n C D D O 10 T P 19 1 r o o LCQOOi? TP?0 1 LC00020 TP21 1 Tp-n 1 TP23 LC00023 IP24 \ 1.00002« TP2S I

TP2330

Abstract: TP2330F TP232 TP2325 Styx
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA TP232$ Advance Information Th e R F U ne VH F Pow er T ran sisto r 2S W — 1 7 5 MHz VHP POWER The TP2325 i f d o atg rw j fo r u m Mi \2$> V V H f am p ktlars o p ia tin g imuU* G fta s A , B of C co o d ilk xts. I » « n s u v K tio n

TP2314

Abstract: j644
Contextual Info: 1EE D I b3L?25M 0 0 0 0 2 5 0 MOTOROLA SC MOTOROLA T | XS TRS /R F SEMICONDUCTOR TECHNICAL DATA TP2314 The RF Line V H F P o w e r T ran sìsto r Designed for 6 V to 12 V VHF applications and is intended for Class A, B or C medium power amplifiers, frequency multipliers or oscillator circuits.

TP2370

Contextual Info: 1 EE D I L3b?2S4 MOTOROLA SC 0000231 XSTRS/R M | T"33- ^ F MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA TP237Ö The RF Line V H F P o w e r T ra n sisto r The TP2370 transistor is intended for land m obile applications operating over the 145-175 M H z frequency range w ith typical vehicular pow er supplies.

high frequency transistor

Abstract: TP2314A
Contextual Info: TP2314A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I 400 mA V 16 V PDISS 5.0 W @ TC = 25 OC

TP242

Abstract: TP236 TP238 TP239 TP240 TP243
Contextual Info: Steel Switch Boxes 31/2" DEEP SWITCH BOXES – GANGABLE – 18.0 CUBIC INCH CAPACITY 2" WIDE x 3" LONG FOR NONMETALLIC CABLE – CLAMPS IN EACH END Steel Boxes TP236 TP238 TP239 TP242 TP243 Cat. # Bracket Ground Pigtail Ears TP236 TP238 TP239 TP240 TP242

U125D

Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
Contextual Info: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D

fatar tp10

Abstract: fatar Fatar TP10 pinout Atsam2553, piano keyboard ATSAM2553 fatar keyboard atsam2553 pedal ATSAM2553PIA-C-DK ATSAM2553 keyboard Pedal
Contextual Info: 1. Connections • Connect the front panel to the main board • Connect the main board to a FATAR TP10 or TP23 keyboard • Connect The main board to pedal (see table below for pinout) • Connect the main board audio outputs to line level inputs of a mixer, a stereo

SCHEMATIC 1000w power amplifier stereo

Abstract: simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.2 –December 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier

tp2304

Abstract: 88MHZ Arco 423
Contextual Info: 12E D | MOTOROLA t,3 t . ? a S 4 MOTOROLA SC O G flaaiS X S T R S /R 0 I F SEMICONDUCTOR TECHNICAL DATA TP2304 The RF Line VH F Power Transistor The TP2304 is designed for use in 12,5 V VHF amplifiers operating underdass A, B or C conditions. Its construction which incorporates gold metallization and diffused ballast resistors for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T P 2325 Advance Information The RF Line V H F P o w e r T ra n s is to r 25 W — 175 MHz VHF POWER TRANSISTOR NPN SILICON The TP2325 is desig n ed fo r use in 12.5 V VHF a m p lifie rs o pe ra tin g und e r Class A, B or

3fc transistor

Abstract: TP2300
Contextual Info: 15E 0 § b3b?Z54 MOTOROLA SC MOTOROLA GDàf l^GÌ XSTRS/R T- 33- 0 | F SEMICONDUCTOR TECHNICAL DATA TP2300 The RF Line VHF Power Transistor The TP2300 is designed for use in 12.5 V V H F amplifiers operating under C la ss A, B or C conditions, its construction w hich incorporates go ld metallization and diffused ballast resistors

TP2317

Abstract: arco TRIMMER capacitor 22 pf trimmer capacitor TRIMMER capacitor 160 pF TRIMMER capacitor 717S unelco trimmer capacitor Trimmer 30 pf
Contextual Info: M O T O R O L A SC X ST R S / R F MbE D • b3b?254 00 =1517b 2 ■ noTb MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TP2317 The RF Line V H F P o w e r T ra n sisto r 20 W — 175 M H z VHF POW ER T he T P2317 is d e sig n e d for u se in 12.5 V V H F am plifiers operating u n d e r C la s s A, B or

Contextual Info: TP2317 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: TP2335 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

TP2307

Abstract: 21191
Contextual Info: 15E D I MOTOROLA T - Î 1-OZ fc,3b?asM o o a a a i ? t I MOTOROLA SC XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA T P 230 7 The RF Line VH F Power Transistor The TP2307 is designed for 6 V to 12 V VHF applications and is intended for Class A, B or C medium power amplifiers, frequency multipliers or oscillator circuits.

westcode thyristor

Abstract: TP230 P230C P230CH06FJ0 thyristor 300 volt
Contextual Info: UE ST C O D E S E M I C O N D U C T O R S » 3Ì Z 'ÌT D ^ 'IS S 0002321 ? iid E S B '/io .T s a j Technical Publication WESTCODE SEMICONDUCTORS TP230C Issue 1 December 1985 Inverter Grade Capsule Thyristor Type P230C 618 amperes average: up to 1200 volts VRRM/VDRM

fatar

Abstract: fatar tp10 Fatar TP10 pinout Dream fatar tp23 main board fatar fatar keyboard dream user guide reverb pedal pinout
Contextual Info: 9753PIA User Guide Making connections Connect the Front panel to the main board Connect the main board to a FATAR TP10 or TP23 keyboard Connect The main board to pedal ( see fig 2 for pinout ) Connect the main board audio outputs to line level inputs of a mixer, a stereo sound

arco mica trimmer

Abstract: UNELCO unelco mica trimmer capacitor TP2335 arco TRIMMER capacitor mica capacitor c12 MOTOROLA ELECTROLYTIC CAPACITOR mica trimmers capacitors 22 pf trimmer capacitor
Contextual Info: MbE D MOTOROLA SC XSTRS/R F MOTOROLA • SEMICONDUCTOR ■ ■ b3b7254 GQ'iSlfiS fl ■ HOTb _ T-3S-II TECHNICAL DATA TP2335 The RF Line VHF Power Transistor 35 W — 175 MHz VHF POWER T RANSISTOR NPN SILICON The TP2335 device is intended for use in VH F transmitter output stages where high

BUZ-10L

Abstract: mtp23n BUZ10L
Contextual Info: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,

TP2314

Abstract: ic tp2314 high frequency transistor
Contextual Info: TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 CE DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC

TP2330

Abstract: TP2330F motorola rf power transistors TP2-330
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP 2330 TP2330F The RF Line VHF Power Transistors 30 W — 175 M H z T h e T P 2330 d e v ic e is in te n d e d fo r us e in V H F t r a n s m itte r o u tp u t s ta g e s w h e re h ig h V H F PO W ER g a in is d e s ire d .