TP0616N Search Results
TP0616N Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TP0616N2 | Unknown | FET Data Book | Scan | 52.87KB | 1 | ||
| TP0616N3 | Unknown | FET Data Book | Scan | 52.87KB | 1 | ||
| TP0616N5 | Unknown | FET Data Book | Scan | 52.87KB | 1 | ||
| TP0616ND | Unknown | FET Data Book | Scan | 52.87KB | 1 |
TP0616N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TP0616N3
Abstract: TP0616N2
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OCR Scan |
-160v-200vtp06ctp0616n2+6 | |
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Contextual Info: ^ . T P 06C Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t Order Number / Package BV DSS/ ^ D S O N ' d (ON) ^ G S (lh ) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4A TP0616N2 |
OCR Scan |
tp0616n2tp0620n2tp0616n3tp0620n3+6 | |
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Contextual Info: TP0616N5 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V)20 I(D) Max. (A)1.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)-55 |
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tp0616n5 | |
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Contextual Info: TP0616 TP0620 S u p ertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B^DGS max JÎ -160V 12£2 -200V 120 BV d ss / R d S(ON) Order Number / Package V GS(th) (max) TO-92 -0.75A -2.4V TP0616N3 TO-220 — -0.75A -2.4V |
OCR Scan |
tp0616tp0620tp0616n3tp0620n3+5 | |
TP0620N5
Abstract: p-channel 200V TP0616N2 TP0620N2 p-channel DMOS P-CHANNEL TO-220 TO-220 TP0616 TP0616N3 TP0616N5
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Original |
tp0616tp0620-160vtp0616n2+11 | |
TP0616N3
Abstract: TP0616 TP0620 TP0620N3 TP0620N5 02A16
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Original |
tp0616tp0620-200v-160v+5 | |
TP0616N3Contextual Info: TP0616 TP0620 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV dss / ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4V TP0616N2 TP0616N3 TP0616N5 TP0616ND -200V 12Q -0.75A -2.4V TP0620N2 TP0620N3 |
OCR Scan |
tp0616tp0620tp0616n2tp0620n2+6 | |
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Contextual Info: TP0616N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V)20 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.0 Minimum Operating Temp (øC)-55 |
Original |
tp0616n2junc-case20 | |
TP0616N3Contextual Info: TP0616N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V)20 I(D) Max. (A)400m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 |
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tp0616n3junc-case125 | |
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Contextual Info: S u p e r t e x in c TP0616 TP0620 Low Threshold . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R DS ON b v tcs (max) -160V 120 -0.75A -2.4V TP0616N 2 T P 0616N 3 T P 0616N 5 T P0616N D -200V 12£i -0.75A -2.4V |
OCR Scan |
tp0616tp0620-160vtp0616n+5 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
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Original |
1n32451n3611gp1n3612gp1n3613gp+16 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
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t0-92options4206azvn4206czvn4206e+15 | |
ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
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OCR Scan |
zvp2106czvp2110azvp2110czvp2120a+11 | |
TN0624N2
Abstract: TN0620ND TN0624N3 TN0624N5 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3
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OCR Scan |
tn0620ndtn0624n2tn0624n3tn0624n5+12 | |
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SW7 357
Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
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Original |
vf01/vf06/vf21/vf25vf22/lnd1/lp07vf05/vf13/vf26/tn07vf32/lne1/lp08+15 | |