TP02 Search Results

TP0202K

Abstract: TP0202K-T1-E3 marking code vishay SILICONIX sot-23
Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

TP0410

Abstract: TP0206-5R6I
Contextual Info: Inductors AXIAL LEAD TYPE, TP SERIES [RCJ APPROVED] TP0206 TYPE 00.510.05 [ 020 ± 002] ELECTRICAL CHARACTERISTICS Part No. TP0206-R10L ] * TP0206-R12L l TP0206-R15G TP0206-R18M TP0206-R22T l *U : Q min. Test frequency L, Q MHz Self-resonant frequency (MHz) min.

AN804

Abstract: TP0202T marking code vishay SILICONIX vishay siliconix code marking
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

Contextual Info: Detectors TP0208RM01 Tunnel Detector 2 GHz to 8 GHz Specifications RF Frequency K Factor Flatness TSS Input max Output Capacitance VSWR (max) 2 GHz to 8 GHz 800 mv/mw min 0.4 ± dB max -51 dBm 17 dBm CW 27 pF 2:1 Environmental Ratings Storage Temperature

Contextual Info: Detectors TP0208CC01 Tunnel Detector 2GHz to 8GHz Specifications RF Frequency K Factor Flatness TSS Input max Output Capacitance VSWR (max) 2GHz to 8GHz 800 mv/mw min 0.4 ± dB max -51 dBm 17 dBm CW 27 pF 2:1 Environmental Ratings Storage Temperature Operating Temperature

TP0202T

Abstract: AN804
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

Contextual Info: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET -3 0 * iK > ’ PRODUCT SUMMARY V (B R )D S S ( m ln ) (V ) < r D S (o n ) (f ì ) VGS(th)(V) lD (mA) 1.4 @ V q s = - 1 0 V -1 .3 t o -3 .0 -3 8 5 3.5 @ V G s = - 4 - 5 V -1 .3 t o -3 .0 -2 4 0

Contextual Info: Inductors AXIAL LEAD TYPE, TP SERIES [RCJ APPROVED] TP0206 TYPE 005±0.05 [.020±.002] am , ° 27 [1.063] min. 27 [1.063] min. 6.35 ±0.25 [.250 ±.010] 02.42 ±0.25 [.095 ±.010] Dimensions in mm [inches] CHARACTERISTICS Operating temperature range -5 5 to +125°C[ — 67to +257°F]

AN804

Abstract: TP0202T
Contextual Info: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features

AN804

Abstract: TP0202T
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

TP0205A

Abstract: TP0205AD
Contextual Info: TP0205A/AD New Product Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

Tunnel diode

Contextual Info: Detectors TP0218CC01 Tunnel Detector 2GHz to 18GHz Specifications RF Frequency K Factor Flatness TSS Input max Output Capacitance VSWR (max) 2GHz to 18GHz 650 mv/mw min 1 ± dB max -50 dBm 17 dBm CW 27 pF 2.5:1 Environmental Ratings Storage Temperature Operating Temperature

tp02

Contextual Info: tile Rechte Vorbehalten/ i l l rights r e s e m i i-r^ p 'O 6,6 All Diiensions in • 1 Ml 2 x ‘ lechn. [harac1er. lichl tolerierte Nasse/ free su e h le r m e s Original Size OIN A I Dal. Délai I. Insp. laie NassslabI S ale 1 9.06.06 Loe. W IT INO 67- 30 TP02

westinghouse thyristor drive

Abstract: Westinghouse thyristor TP027R thyristor tt 18 n 1100 Westcode N thyristor Semiconductors p027rh08fjo IG3GT POZ7RH06FJO-800 thyristor tt 105 n 16
Contextual Info: 11E J> UESTCODE SEMICONDUCTORS m •nil'HSS D O O l ^ S Í echnical Publication W ESTCODE ^ SEMICONDUCTORS TP027R Issue 2 April 1985 Inverter Grade Stud-Base Thyristor Type P027R 34 amperes average; up to 1200 volts V rrm IV drm T -a s r-1 7 R a t i n g s Maximum values at 12S°C T j unless stated otherwise

Contextual Info: Detectors TP0218CC01 Tunnel Detector 2 GHz to 18 GHz Specifications RF Frequency K Factor Flatness TSS Input max Output Capacitance VSWR (max) 2 GHz to 18 GHz 650 mv/mw min 1 ± dB max -50 dBm 17 dBm CW 27 pF 2.5:1 Environmental Ratings Storage Temperature

marking code vishay SILICONIX

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

TP0205A

Abstract: TP0205AD VISHAY SOT LOT CODE
Contextual Info: TP0205A/AD New Product Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

TP0204

Abstract: TP0204N2 TP0204N3
Contextual Info: 01 SUPERTEX INC DE | ô 7 7 3 E T S ODOlSSb T | ~ P-Channel Enhancement-Mode Vertical D M O S Power FETs Ordering Information Order Number / Package TO-39 TO-92 BVdss I ^DS ON b v dos (max) (min) -20 V 2.0Q -2.0A TP0202N2 TP0202N3 -40V 2 .on -2.0A TP0204N2

TP0202T

Abstract: Oj26
Contextual Info: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D

Tunnel diode

Contextual Info: Detectors TP0218RM01 Tunnel Detector 2GHz to 18GHz Specifications RF Frequency K Factor Flatness TSS Input max Output Capacitance VSWR (max) 2GHz to 18GHz 650 mv/mw min 1 ± dB max -50 dBm 17 dBm CW 27 pF 2.5:1 Environmental Ratings Storage Temperature Operating Temperature

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. TP0208CC01 Tunnel Detector 2 GHz to 8 GHz DETECTORS Specifications RF Frequency K Factor Flatness TSS Input max