TP 312 TRANSISTOR Search Results

C67078-S3129-A2

Abstract: tp 312 transistor
Contextual Info: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

Contextual Info: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C

Contextual Info: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

TRANSISTOR SMD 9bb

Abstract: TI 42A
Contextual Info: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,

NTE165

Abstract: NPN Transistor 1500V
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

NPN Transistor 1500V

Abstract: NTE165
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

Contextual Info: EL7240C/EL7241C ¿ la n fr n r EL7240C/EL7241C • ■ M KPA’ EOCIRCJITS i HIGHmtf-GRMANCEANALOG«N’ 1H1 iI ff fl iht , kS JnJ p / Wp Ud l / UV iI /I/ AD / *r fi Cv / eC rf sa F eatu res G eneral D escription • • • • • • • The EL7240C/EL7241C high speed coil drivers accept logic in­

NTE283

Abstract: npn 10a 800v
Contextual Info: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2001C Low Power, 70 MHz Buffer Amplifier Features General Description • 1.3 mA supply current • 7 0 M Hz bandw idth • 2000 V/f-ts slew rate • Low bias current, 1 jiA typical •1 0 0 mA output current • Short circuit protected

EL200

Abstract: EL2004
Contextual Info: la n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2004/EL2004C 350 MHz FET Buffer F eatu res G eneral D escrip tion • • • • • • • T he EL2004 is a very high-speed, F E T in p u t b u ffer/lin e driver designed for u n ity gain applications a t b o th h igh cu rren t up to

LM875

Abstract: TRANSISTOR L 043 A 2N6678
Contextual Info: 2N6678 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 INCHES A MAXIMUM RATINGS 15 A Ib 5.0 A < B le 400 V O m 875 MAX. 135 MAX. .2 5 0- 043 DIA.

la 440 ic

Abstract: 10ADC
Contextual Info: SPT6060/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • High Voltage Rating - 350V Sustaining Fast Switching Capabilities / Fast Turn-off Time

Contextual Info: C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS E L 2 0 0 8 C 5 5 M H z 1 A m p B u ffe r A m p lifie r F e a tu r e s G eneral D escrip tion • H ig h slew rate—2500 V/ju.s • W ide b andw idth— 100 M H z @ R l = 50ft 55 M H z @ RL = 10ft • O u tp u t curren t— 1A continuous

FE 1.1s

Abstract: iess 312 scaj najog DAC312
Contextual Info: 12-Bit Hgh Speed Multiplying 0 A Converter ANALO G D EVIC ES DAC312 FEATURES Differential Nonlinearity: ± 1 /2 LSB Nonlinearity: 0.05% Fast S ettling Time: 250 ns High Compliance: - 5 V to +10 V Differential Outputs: 0 to 4 mA Guaranteed M onotonicity: 12 Bits

buz36

Contextual Info: PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE DbE D • t.bS3T31 0014bab E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

NPN Transistor 50A 400V

Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Contextual Info: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly

NTE53

Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Contextual Info: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

NTE52

Contextual Info: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323

Contextual Info: b b S B ' m 0054443 STT « A P X Philips Semiconductors PNP general purpose transistor — BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j>— — — • MAX. UNIT -5 0 V -3 0 V PIN CONFIGURATION • High current • S- mini package.

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

transistor 5d

Abstract: BC808W 5H MARKING BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: P jjjN p ^ e n jjÇ o n d u c to i« ^ Ç ^ 7 1 1 □ fi 2 b QObf lMOT 3Tfl H P H IN PNP general purpose transistor FEATURES ^^P|j°duc^P8çfficatlon BC807W; BC808W PIN CONFIGURATION • High current • S-m ini package. DESCRIPTION PNP transistor in a plastic SOT323

150w darlington transistor to3 package

Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Contextual Info: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly