TP 312 TRANSISTOR Search Results

tp 312 transistor

Abstract: transistor BUZ 40 C67078-S3129-A2 buz312
Contextual Info: SIPMOS Power Transistor BUZ 312 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 312 1000 V 6.0 A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current, TC = 33 ˚C

C67078-S3129-A2

Abstract: tp 312 transistor
Contextual Info: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated i P in i Pin 2 G Type BUZ 312 Vds 1000 V fa 6A ^fasten 1 .5 « Pin 3 D S Package Ordering Code TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS SIPWIOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type ^DS i A ^DS on) BUZ 312 1000 V I 6.0 A 1.5 n Maxim um Ratings Parameter Continuous drain current, Tc = 33 ‘ C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Ti max

NPN Transistor 600V

Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
Contextual Info: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

Contextual Info: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C

change resistor when high current power system

Abstract: servo motor controller diagram transistor crossover Motor current sense servo motors pari EL2137CS motor drive 4 pin transistor smd ab l2137
Contextual Info: EL2137C ELANTEC INC 41E D EL2137C IEL A ! 2 A, Small, Precision Servo Motor Driver HIGH PERFORMANCE ANALOG INTEGRATED CIRCUtTS F e a tu r e s G e n e ra l D e sc r ip tio n • 34 mA m inim um base drive to H bridge pow er transistors • 2 A m otor cu rren t tran sisto r

Contextual Info: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

Contextual Info: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated

TRANSISTOR 318

Abstract: BSP 312 BSP318 MU diode MARKING CODE
Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223

2N6561

Abstract: 2N6563 BUW73
Contextual Info: -Ætttron Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:

TRANSISTOR SMD 9bb

Abstract: TI 42A
Contextual Info: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,

marking 3t1

Abstract: marking S3 amplifier RV2833B5X
Contextual Info: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

NPN Transistor 1500V

Abstract: NTE165
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

MSD060

Abstract: BUK7213-40A
Contextual Info: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.

transistor npn

Abstract: 2SD1768S transistor 313 2SD1768 Transistor 2SD1768S
Contextual Info: 2SD1768S Transistor, NPN Features Dimensions Units : mm available in SP T (SC -72) package 2SD1768S (SPT) high co llector-to-em itter voltage: V c e o = 80 V large collector current: lc = l A continuous (dc) m good hFE linearity low co lle ctor saturation voltage

Contextual Info: EL7240C/EL7241C ¿ la n fr n r EL7240C/EL7241C • ■ M KPA’ EOCIRCJITS i HIGHmtf-GRMANCEANALOG«N’ 1H1 iI ff fl iht , kS JnJ p / Wp Ud l / UV iI /I/ AD / *r fi Cv / eC rf sa F eatu res G eneral D escription • • • • • • • The EL7240C/EL7241C high speed coil drivers accept logic in­

NTE283

Abstract: npn 10a 800v
Contextual Info: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include

Contextual Info: BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 01 — 25 July 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.

BUZ54

Abstract: BUZ54A Diode D 54 3tf* siemens 235L C160 TC-130-W C67078-S1010-A3 DIODE BUZ 300
Contextual Info: SIEM ENS SIPMOS Power Transistors BUZ54 • N channel • Enhancement mode • Avalanche-rated VMT05152 Type VDS Id •^DS on Package 1> O rdering Code BUZ 54 1000 V 5.1 A 2 .0 £2 T O -2 0 4 A A C 6 7 0 7 8 -S 1 0 1 0 -A 2 BUZ 54 A 1000 V 4 .5 A 2 .6 n

Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2001C Low Power, 70 MHz Buffer Amplifier Features General Description • 1.3 mA supply current • 7 0 M Hz bandw idth • 2000 V/f-ts slew rate • Low bias current, 1 jiA typical •1 0 0 mA output current • Short circuit protected

constant time delay

Abstract: metal detector plans schematic el2019h/883b M2019 metal detector diagram PI rs flip flop T-75 A HIGH VOLTAGE DIODES EL2019CH EL2019CJ EL2019CN
Contextual Info: Sñ E D ^B m K 0 W 0 HifiH PERFORMANCE ANALOSINTEGRATHD CIRCUITS t>72 • E L A EL2019/EL2019C Fast, High Voltage Comparator with Master Slave Flip-Flop ELANTEC INC Sl> G eneral D escrip tion The EL2019 offers a new feature previously unavailable in a comparator before—a m aster/slave edge triggered flip-flop. The