TOX MARKING Search Results

swhyste

Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
Contextual Info: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.

TS87C52X2-MCA

Abstract: TEMIC DATABOOK temic gateway PDIP40 PLCC44 PQFP44 TS87C52X2 VQFP44 251G2D
Contextual Info: Qualification Package TS87C52X2 0.5 µm SCMOS3 NV Technology June 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– June 1999 1 1. General Information. 3

intel 80 82

Abstract: temic gateway ITS9000 JESD22-A110 marking code 4e PDIP40 PLCC44 PQFP44 TS80C52X2 VQFP44
Contextual Info: Qualpack TS80C52X2 Qualification Package TS80C52X2 Automotive 0.5 µm SCMOS3 Technology TS80C52X2 0.5 µm SCMOS3 JULY 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev.B– JULY 1999 1 Qualpack TS80C52X2 1. General Information . 3

CQPJ

Abstract: marking code 4e PDIP40 PLCC44 PQFP44 TS80C31X2 TS80C32X2 VQFP44 Ablestick intel 80 82
Contextual Info: Qualpack TS80C31X2/C32X2 Qualification Package TS80C31X2 / TS80C32X2 0.5 µm SCMOS3 Technology TS80C31X2 / TS80C32X2 0.5 µm SCMOS3 MARCH 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– March 1999 1 Qualpack TS80C31X2/C32X2 1. General Information . 3

temic gateway

Abstract: TOX marking TS83C51RX2 ITS9000 JESD22-A110 marking code 4e TEMIC DATABOOK PDIP40 PLCC44 TS83C51RB2
Contextual Info: Qualpack TS83C51RX2 Qualification Package TS83C51RB2 / TS83C51RC2 0.5 µm SCMOS3 Technology TS83C51RB2 / RC2 0.5 µm SCMOS3 MARCH 1999 TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. A– March 1999 1 Qualpack TS83C51RX2 1. General Information . 3

n20 n21 fet

Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Contextual Info: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital

IRF640N

Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Contextual Info: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

TSS-IO16-A

Abstract: EIA-556-A tssio16a ATMEL flow soldering Z31300 TS87251g2 marking code 4e TSSIO16E Z27184 ts87c51
Contextual Info: Atmel Wireless & Microcontrollers Qualification Package TSSIO16E in Automotive 0.5 µm SCMOS3 Technology TSSIO16E Automotive 0.5µm SCMOS3 August 2000 Rev. 0– AUGUST 2000 1 Atmel Wireless & Microcontrollers 1. General

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

19E-9

Contextual Info: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

2511NZ

Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Mosfet FDP8870

Abstract: 19E-9 FDP8870
Contextual Info: FDP8870 e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

HP83000

Abstract: 0.7 um CMOS process parameters Nitto 9850 JEDEC20 G226 Nitto MP8000 MP8000 ITS9000 atmel PLCC bottom "marking" MG2RTP
Contextual Info: Qualpack MG2RT/MG2RTP Qualification Package MG2RT / MG2RTP 0.5 µm Radiation Tolerant SCMOS3 Technology MG2RT / MG2RTP 0.5 µm SCMOS3 1999 August TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 0 – 1999 August 1 Qualpack MG2RT/MG2RTP 1. General Information . 3

N302AP

Abstract: ISL9N302AP3 1E25 l 129 v 1E40
Contextual Info: ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

67E-3

Abstract: FDI038AN06A0 FDP038AN06A0 n10 diode abs s1a NL104
Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

MOSFET S1A

Abstract: M060 45E-2
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge