TOSHIBA ZENER Search Results

IGBT K 40 T 1202

Contextual Info: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

200H

Abstract: TF1208
Contextual Info: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 8 TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

tb31224cf

Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Contextual Info: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future

Contextual Info: TF1208 TOSHIBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 8 Unit in mm TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

zener diode T 5z27

Abstract: toshiba zener 5Z27 5Z30 3-10B1A
Contextual Info: TOSHIBA 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 POWER SURGE SUPPRESSOR Unit in mm -designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over-voltage conditions. , / .

20M diode zener

Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Contextual Info: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200

TA78L008AP

Abstract: TA78L005 TA78L005AP TA78L012AP N22V TA78L006AP TA78L007AP TA78L009AP TA78L010AP TA78L075AP
Contextual Info: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP

3Z27 DIODE

Abstract: 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13
Contextual Info: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR AN D SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package -o - P = 3W

zener VZ 1.2 v

Abstract: zener diode IN 825 zener diode 561 1Z150 351 zener diode toshiba zener LZ47 0424g lZ33 1Z33
Contextual Info: b7 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA D eT | I C H T S S D DI S C R E T E / O P T O 1 Z 3 3 -1 Z 3 9 0 67C 09387 OOOTBñ? 4 D T"//“/3 Silicon Diffused Type Zener Diode Unit in mm Toshiba Zener Diode 1Z390 series are designed for surge voltage suppressors to protect the voltage sensitive

Contextual Info: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package

2SC2982

Abstract: 02CZ24 TA8313 TA8313F
Contextual Info: TOSHIBA TENTATIVE TA8313F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8313F LED DRIVER FOR CAMERA TA8313F is Multi Chip IC incorporates 4 low saturation discrete transistors and one Zener Diode. This IC is suitable for a camera use LED drive

120V ZENER

Abstract: 1ZC12 1ZC120 1ZC12-1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22
Contextual Info: TOSHIBA 1ZC12-1ZC120 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSE TYPE 1ZC12-1ZC120 Unit in mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES 6 Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 12- 120 V Tolerance of Zener Voltage Vg : ±10%

TF1207

Contextual Info: TO SH IBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 7 TOSHIBA TF1207 is the IGBT gate driver designed for use U n it in mm with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

l24SB

Abstract: ta7555 ta78r TA78M05 TA78M05SB TA78M06SB TA78M08SB TA78M09SB 105SB TA78M12SB
Contextual Info: TOSHIBA TA78M05,06,08~10,12,15,18,20,24SB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10SB TA78M12SB, TA78M15SB, TA78M18SB, TA78M20SB, TA78M24SB 0.5A THREE TERMINAL POSITIVE VOLTAGE REGULATORS

DF2S12FU

Contextual Info: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Cx = 15 pF Typ. Zener Voltage correspond to E24 Series.

Contextual Info: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Ct = 15 pF Typ. Zener Voltage correspond to E24 Series.

TF1206

Abstract: 200H
Contextual Info: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 6 TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

1042a1

Abstract: TF1205
Contextual Info: TF1205 TO SH IBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 5 TOSHIBA TF1205 is the IGBT gate driver designed for use Unit in mm with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

Contextual Info: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 206 Unit in mm TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

Contextual Info: T O SH IB A TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 6 Unit in mm TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

H 48 zener diode

Abstract: Toshiba 02BZ2.2 02BZ2.2 zener h 48 zener diode 4.7V current rating Zener Diode frequency Diode 02bz3.9 zener diode si 18 02BZ4.7 opto 101
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b7 <DI SC R E T E / O PT O> *• ~ dF| ^ 7 2 5 0 67C 09264 Silicon Planar Type DQGiam □ f 0/"-//"O7 i 02BZ2.2-02BZ4.7 Zener Diode Unit in mm LOW VOLTAGE REGULATION AND LOW REFERENCE VOLTAGE APPLICATIONS. FEATURES:

Contextual Info: T O S H IB A TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 5 Unit in mm TOSHIBA TF1205 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

2SD2127

Contextual Info: 2SD2127 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S D 2 1 27 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS. • • • High DC Current Gain : hpE = 500~1500 Low Collector Saturation Voltage : v CE sat = °-3V (Max.) Zener Diode Included Between Collector and Base.

os 135 diode

Abstract: ZENER C 3V diode j5d W 135 Zener 1SZ57 ZENER Vr 3V 1sz58 1SZ59 toshiba marking mc toshiba lot number type
Contextual Info: W7 TOSHIBA {DIS CR ETE /OP TO} 9097250 TOSHIBA ÍmTI^O^SSO □ D I S C R E T E / O P T O 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Temperature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in m m VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.