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    TOSHIBA MARKING CODE TRANSISTOR K10A50D Search Results

    TOSHIBA MARKING CODE TRANSISTOR K10A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TOSHIBA MARKING CODE TRANSISTOR K10A50D Datasheets Context Search

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    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a PDF

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d PDF

    k10a50d

    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D k10a50d PDF

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D PDF