TOPLESS Search Results
TOPLESS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TOPLESS | STMicroelectronics | TOPLESS - ASD & DISCRETES - TOURS | Original | 20.51KB | 1 |
TOPLESS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: m o le x FEATURES AND SPECIFICATIONS Features and Benefits Electrical m Sizes 5 and 7 circuits • Fully shielded design Current: 2.0A max. Contact Resistance: 5 0 m & max. H Kinked board lock for secure PCB retention ■ Bracket shield and topless shield versions available |
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ps-87370-00012800gn-171 | |
d1564
Abstract: 72 simm function topless SIMM232S 63D15 30 pin simm memory
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simm232s2mx3272-pin32-bit+5 | |
Q103
Abstract: 3.50mm Jack
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2800gterminal--120shield--100ps-873m+4 | |
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Contextual Info: M40SZ100Y M40SZ100W 5 V or 3 V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5 V or 3 V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance |
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m40sz100ym40sz100w28-lead | |
M40SZ100W
Abstract: M40SZ100Y SOH28 SOIC16 SOIC28
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m40sz100ym40sz100w28leadsoh28+2 | |
2001 NVRAM
Abstract: M40SZ100W M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
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m40sz100ym40sz100w16-pin28lead+6 | |
MARKING CODE SMD IC 531
Abstract: application SCR SCR Phase Control IC SMD MARKING CODE RIA
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son------------------------------------27marking code smd ic 531application scrscr phase control ic+1 | |
M40SZ100W
Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
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m40sz100ym40sz100w16-pin28lead+5 | |
d 425
Abstract: d 317 transistor h 033 177 transistor datasheet
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0039613dd 425d 317 transistorh 033+1 | |
PGA68
Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight
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gs-150t102x51x19gs-100tgs-r1005+10 | |
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Contextual Info: M48Z32V 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM PRELIMINARY DATA FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, and POWER-FAIL CONTROL CIRCUIT ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION |
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m48z32v44-pinsoh44a0-a14 | |
NVRAM
Abstract: M40SZ100W M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
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m40sz100ym40sz100w16-pin28lead+6 | |
ELTEC INSTRUMENTS
Abstract: eltec jfet transistor transistor bw 51 BOX9610
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3st404115vdc5x1010n5x1011ii+7 | |
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Contextual Info: M40SZ100Y M40SZ100W 5V or 3V NVRAM SUPERVISOR FOR LPSRAM PRELIMINARY DATA FEATURES SUMMARY • CONVERT LOW POWER SRAMs INTO NVRAMs ■ 5V OR 3V OPERATING VOLTAGE ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION WHEN |
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m40sz100ym40sz100w16-pin28lead+1 | |
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13May
Abstract: M40SZ100W M40SZ100Y M4Z28-BR00SH M4Z32-BR00SH SOH28 SOIC16 SOIC28
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m40sz100ym40sz100w28-lead13may+5 | |
M40SZ100WMQ6FContextual Info: M40SZ100Y M40SZ100W 5V or 3V NVRAM SUPERVISOR FOR LPSRAM FEATURES SUMMARY • CONVERT LOW POWER SRAMs INTO NVRAMs ■ 5V OR 3V OPERATING VOLTAGE ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE |
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m40sz100ym40sz100w16-pin28lead+2 | |
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Contextual Info: M40SZ100Y M40SZ100W 5V OR 3V NVRAM SUPERVISOR FOR LPSRAM PRELIMINARY DATA FEATURES SUMMARY • CONVERT LOW POWER SRAMs INTO NVRAMs ■ 5V OR 3V OPERATING VOLTAGE ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION WHEN |
Original |
m40sz100ym40sz100w16-pin28lead+1 | |
M40SZ100W
Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
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Original |
m40sz100ym40sz100w28-lead28-leand+4 | |
inverter welding machine circuit board
Abstract: LRGUT400F120C IGBT ZVT Full bridge MOSFET welding INVERTER ZVT Full bridge transformer IGBT WA960 ZVT full bridge pwm controller zvt boost converter ADVANCED POWER TECHNOLOGY EUROPE resonant converter for welding
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apt9904b-1330f-33700inverter welding machine circuit board+9 | |
8 bit alu in vhdl mini project report
Abstract: vhdl mini projects on electronic voting machine electronic stethoscope circuit diagram semiconductors cross index abstract for mobile bug 3 DG 1000 R3000 mips simulation by vhdl on pipelining MVME 68000 uPD72001 manual d72001
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64-bitu11455eu1v0sg00vr4101vr4300+15 | |
8737 tubeContextual Info: m o l e x Phono Jack PCB Receptacle FEATURES A ND SPECIFICATIONS Features and Benefits Electrical • ■ ■ ■ Current: 2.0A max. Contact Resistance: 5 0 m £ i max. Dielectric Withstanding Voltage: 500V AC/T min. Insulation Resistance: 50 M Q min. Sizes 5 and 7 circuits |
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ps-87370-00012800g8737 tube | |