TOP SIDE MARKING P5 Search Results
TOP SIDE MARKING P5 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPD2015FN |
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Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 | Datasheet | ||
TPD2017FN |
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Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 | Datasheet | ||
MG800FXF1ZMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet | ||
MG800FXF1JMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet | ||
5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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TOP SIDE MARKING P5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 05308 P5V0S1ULC STANDARD CAPACITANCE TVS COMPONENT APPLICATIONS ✔ ✔ ✔ ✔ Ethernet - 10/100/1000 Base T Cellular Phones Personal Digital Assistant PDA USB Interfaces IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns |
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EN61000-4) 5/50ns | |
Contextual Info: 05302 P5V0S1UL STANDARD CAPACITANCE TVS COMPONENT APPLICATIONS ✔ ✔ ✔ ✔ Ethernet - 10/100/1000 Base T Cellular Phones Personal Digital Assistant PDA USB Interfaces IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns |
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EN61000-4) 5/50ns 8/20s) | |
silicon npn planar rf transistor sot 143
Abstract: transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
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OCR Scan |
DDD53m HAL66 BFS62 500WW ft-11 569-GS 000s154 if-11 silicon npn planar rf transistor sot 143 transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c | |
SI-30019Contextual Info: LDWER ROW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P 1 -P 2 -P 3 i (J 1 -J 2 ) (P 4 - P 5 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 4 ) (P 3 -P 1 ) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (W ITH J 6 AND J 3 SHORT) P 3-P 1 (W ITH J 2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD <J 6,J3 ) |
OCR Scan |
1000PF, 350uH CT720114 SI-30019 | |
P500-Gxxx
Abstract: fultec GR-1089 P500-G200-WH P850-G120-WH 85GA 50ga MOSFET SMD MARKING CODE 618 bourns potentiometer 321
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P500-G P850-G P500-G P850-G120-WH MOV-10D361K GSD2004S-V MMBD2004S P500-Gxxx fultec GR-1089 P500-G200-WH P850-G120-WH 85GA 50ga MOSFET SMD MARKING CODE 618 bourns potentiometer 321 | |
Contextual Info: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package |
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P500-G P850-G P500-G E315805. GR-1089 P850-G | |
85GA
Abstract: P850-G120-WH P500-G120-WH GR-1089 P500-G200-WH MOV surge protection circuit diagram k20e VISHAY BC 047 P850-G200-WH
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P500-G P850-G P500-G P850-G120-WH MOV-10D361K GSD2004S-V MMBD2004S 85GA P850-G120-WH P500-G120-WH GR-1089 P500-G200-WH MOV surge protection circuit diagram k20e VISHAY BC 047 P850-G200-WH | |
85GA
Abstract: p500g diode smd marking code 76
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P500-G P850-G P500-G E315805. GR-1089 P850-G 85GA p500g diode smd marking code 76 | |
Contextual Info: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that |
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P500-G P850-G | |
Contextual Info: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that |
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P500-G P850-G | |
Contextual Info: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3) |
OCR Scan |
350uH CT720112 | |
LTP190
Abstract: marking p50 LTP070 LTP070S LTP100 LTP100S LTP180 LTP180S LTP260 LTP300
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P50-59LT LTP070 LTP070S LTP100 LTP100S LTP180 LTP180S LTP190 LTP190R-U LTP260 LTP190 marking p50 LTP070 LTP070S LTP100 LTP100S LTP180 LTP180S LTP260 LTP300 | |
35NAG
Abstract: td 6d01
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OCR Scan |
350uH CT720114 ST-30083 35NAG td 6d01 | |
TYCO MODULE
Abstract: diode MARKING CODE 18A QBW018A0B QBW018A0B-P58 TYCO module p
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DS04-044 qbw018a0b-P58 12Vdc QBW018A0B x3001 TYCO MODULE diode MARKING CODE 18A TYCO module p | |
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Contextual Info: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also |
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MC100E193 12-bit MC100E193/D | |
3525 "application note"
Abstract: SECDED ic 4050 AN1404 AND8020 E160 MC100E193 MC100E193FN MC100E193FNR2 socket 775 pinout
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MC100E193 MC100E193 12-bit r14525 MC100E193/D 3525 "application note" SECDED ic 4050 AN1404 AND8020 E160 MC100E193FN MC100E193FNR2 socket 775 pinout | |
LXES2TBCC4-028Contextual Info: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/35 1. Application This specification shall be applied to the ESD Protection Device. LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 |
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p1/35 LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2TBCC4-028 | |
LXES2TBCC4-028Contextual Info: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/35 1. Application This specification shall be applied to the ESD Protection Device. LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 |
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p1/35 LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2TBCC4-028 | |
Contextual Info: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/35 1. Application This specification shall be applied to the ESD Protection Device. LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 |
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p1/35 LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 | |
hall sensor 477
Abstract: 4 pin hall marking code 6 AH480 hall marking code 6 marking code fg AH477 marking code 8 lead msop package hall effect sensor 4 pin ic hall effect sensor 4 pin MSOP-8L
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AH477/480 AH477/480 AH480 858mm 209mm hall sensor 477 4 pin hall marking code 6 hall marking code 6 marking code fg AH477 marking code 8 lead msop package hall effect sensor 4 pin ic hall effect sensor 4 pin MSOP-8L | |
"on semiconductor"
Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
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MC10E193, MC100E193 MC10E/100E193 12-bit r14525 MC10E193/D "on semiconductor" E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350 | |
60PS-JMDSS-G-1-TFContextual Info: JMD CONNECTOR 0.5mm Emboss Tape Board-to-board connectors .020" pitch Features–––––––––––––––––––––––– • Smooth connection Thanks to the cantilever type contacts, mating is very smooth. • Distortion preventive construction |
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5mm/20 0mm/30 0mm/50 Perpendicular/20 60PS-JMDSS-G-1-TF | |
Contextual Info: RJ Filter Port Jacks with 10Base-T Filters ELECTRONICS INC. EPJ9372 • Designed for SitePlayer • Space saving RJ-45 Connectors • Available in different shielding configurations Electrical Parameters @ 25° C Cut-off Frequency MHz Insertion Loss (dB Max.) |
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10Base-T EPJ9372 RJ-45 EPJ9372 CSJ9372 | |
LXES2TBCC4-028Contextual Info: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/30 1. Application This specification shall be applied to the ESD Protection Device. LXES1UBAB1-007 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2SBAA4-114 |
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p1/30 LXES1UBAB1-007 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2SBAA4-114 LXES2TBCC4-028 LXES4XBAA6-027 LXES2TBCC4-028 |