TOP MARK A08 4 PIN Search Results

marking A08

Abstract: RT9014 RT9014-PQW DS9014 RF AMPLIFIER marking A08
Contextual Info: RT9014/A Preliminary Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor General Description Features RT9014/A is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA, an open drain driver

A09 N03

Abstract: a06 n03 RTU A08 b09 n03 ddc bus-66312 BUS-66312 66312
Contextual Info: 000 BUS-66312 ILC DATA DEVICE CORPORATION_ _ _ MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT F E A TU R E S • C O M P A T IB L E W ITH M IL-S T D -1750 C PU s • C O M P A T IB L E W ITH M O TO R O LA , INTEL, A N D Z IL O G C PU s • C O M P A T IB L E W ITH D D C

Contextual Info: t e l x d y n e 2 öe co m po nen ts d • QQDbt,Ci0 T ' » 3$ ,*?• .O .0 T -1 3 -2 S CHQ2222 NPN QUAD AMPLIFIER JAN, JANTX, JANTXV pending General Purpose PACKAGE OUTLINE Four NPN Transistors Similar to 2N3467 TO-116 M19600/569-01 CiC Available in Three Hermetic

RTU A08

Abstract: 308-815
Contextual Info: GE C P L E S S E Y !SEMICONDUCTORS I A DVAN CE INFORMATION 3088-1.5 December 1991 CT2566 MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT G P S C T 2 5 6 6 M IL -S T D -1 5 5 3 to M ic ro p ro c e s s o r Interface Unit sim plifies the CPU to 1553 Data Bus interface.

Contextual Info: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0201 Rev.2.01 Dec 27, 2007 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when

Contextual Info: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0200 Rev.2.00 Dec 15, 2006 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when

BUS-61553

Abstract: BUS61553 bu-61553
Contextual Info: 000 BUS-61553 ILC D ATA D EV ICE C O R P O RATION'S_ _ MIL-STD-1553 ADVANCED INTEGRATED MUX AIM HYBRID DESCRIPTION FEATURES DDC's BUS-61553 Advanced Integrated Mux (AIM) Hybrid is a complete MIL-STD-1553 Bus Controller (BC), Remote Terminal Unit (RTU), and Bus Monitor (MT)

Contextual Info: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0300 Rev.3.00 Mar 25, 2008 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when

IC 4093

Abstract: MARK A03 M62382FP PLQP0100KB-A D1179 2CH3D
Contextual Info: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0300 Rev.3.00 Mar 25, 2008 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when

WEDPN8M64VR-XBX

Contextual Info: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing

Contextual Info: D _ DC i/:'1! Z,W ; VJ«- BUS-65612 ILC DATA DEVICE CORPORATION _ MIL-STD-1553 BUS CONTROLLER REMOTE TERMINAL CONTACT FACTORY AND BUS MONITOR FOR MORE INFORMATION FEATURES DESCRIPTION The BUS-65612 is a 16 MHz single chip dual re dund ant M IL-S TD -1553 Bus

Contextual Info: White Electronic Designs WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456

16MX64

Abstract: WEDPN16M64VR-XBX
Contextual Info: WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM

IC 4093 bp

Abstract: M62382FP PLQP0100KB-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: WEDPN8M64VR-XBX HI-RELIABILITY PRODUCT 8Mx64 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728

BUS-66300

Contextual Info: QQQ BUS-66312 ILC D ATA D E V IC E CO RPO RATIO N _ MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT REFER TO BUS-61553 FOR MEMORY MANAGEMENT DESCRIPTION AND TIMING. DESCRIPTION DDC's BUS-66312 M IL-S TD -1553 to M icroprocessor Interface Unit sim plifies the CPU to 1553 Data Bus interlace

Contextual Info: WEDPN16M64VR-XB2X 16Mx64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: White Electronic Designs WEDPN16M72VR-XBX 16MX72 REGISTERED SYNCHRONOUS DRAM Preliminary* FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456

WEDPN16M72VR-XB2X

Contextual Info: White Electronic Designs WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN16M64VR-XB2X 16Mx64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

WEDPN16M72VR-XB2X

Contextual Info: White Electronic Designs WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing