TO92 TRANSISTOR Search Results

NTE194

Contextual Info: NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

to92 darlington

Abstract: nte232
Contextual Info: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

NTE2341

Abstract: npn darlington TO92 NTE2342
Contextual Info: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

LF303

Contextual Info: LF303 N- Channel Junction Silicon Depletion Field-Effect Transistor Features Especially suggested for use in high sensitive pre-amplifier, amplifying small sign, medical electrical instrument, d-c amplifier. Type Packing TO92S, SOT23-3, TO92 , Metal Packing

2N3904 TO92

Abstract: 2n3904 h2 c 2N3904 2N3903
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified

MPSA44

Abstract: CTO-92
Contextual Info: NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage

NTE293

Abstract: pnp to92
Contextual Info: NTE293 NPN & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications.

NTE2902

Abstract: Diode Gfg 33
Contextual Info: NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: Note 1 Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

NTE998

Contextual Info: NTE998 Integrated Circuit 1.22V Reference Diode Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this

NTE6402

Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
Contextual Info: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL RF TRANSISTOR CSC1730 TO92 BCE TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications.

CTO-92

Contextual Info: Not Recommended for New Design Please Use ZTX458 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA44 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

NTE4011B

Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
Contextual Info: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance

ZTX360

Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

Contextual Info: TO -92 TB100 NPN power transistor 19 December 2013 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO92 plastic package intended for use in low power SMPS emitter switching circuits.

NPN Transistor TO92

Abstract: 2N3904 6 pins IC cbe 2N3903 1010 to-92
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N3903 2N3904 TO92 CBE General Purpose Switching and Amplifier Applications

Contextual Info: DISCONTINUED NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA42 ISSUE 1 – SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA42 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

3155 power transistor

Abstract: ZTX214C equivalent ZTX214C DSA003764
Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 – MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

CSC1730

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL RF TRANSISTOR E CSC1730 TO92 BCE CB TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

NTE12

Abstract: NTE11
Contextual Info: NTE11 NPN & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.

IC 386

Abstract: MPSA94
Contextual Info: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage

to106

Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
Contextual Info: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating

4619V

Abstract: NPN transistor Electronic ballast to92
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER