TO70OC Search Results

Contextual Info: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a

KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Contextual Info: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.

VCSEL array common anode

Contextual Info: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.

Contextual Info: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V

Contextual Info: TOSHIBA TENTATIVE TC554161 FTL-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 3 to

HX8340-B

Abstract: diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99
Contextual Info: DATA SHEET DOC No. HX8340-B(T -DS ) HX8340-B(T) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 February, 2008 HX8340-B(T) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a

29lv160bt

Abstract: BB 555 MX29LV160BT SA10 SA11 SA12 SA13
Contextual Info: ADVANCED INFORMATION MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection

Contextual Info: DALLAS DS1610 Partitioned NV Controller SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Converts CMOS RAMs into nonvolatile memories • SOIC version is pin compatible with the Dallas Semi­ conductor DS1210 NV Controller Aw C VccO C 1 16 PFO 2 15 Vcci Ax C 3 14

X5650

Abstract: X5767 XC7336Q PC44 XC7300 XC7336 XC7336-10
Contextual Info: XC7336 36-Macrocell CMOS EPLD  Product Specifications interconnected by the 100%-populated Universal Interconnect Matrix UIM . Features Ultra high-performance EPLD – 5 ns pin-to-pin speed on all fast inputs – 167 MHz maximum clock frequency Each Fast Function Block has 24 inputs and contains nine

Contextual Info: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

Contextual Info: T O S H IB A TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM

laser DFB 1550nm 10mW

Abstract: 12channel fiber array
Contextual Info: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.

ht321

Contextual Info: WESTERN DIGITAL CORP 4bE » • ^710220 GG12fci74 ^ m\ùì>c D A T A SH E E T WD7910, WD7910LP System Controller Devices \ WESTERN DIGITAL 9000-2615 WESTERN DIGITAL CORP HbE » ■ iTiaaaa ooi5b7S □ ■ u k -r-SZ ' 33 -65 Copyright 1991 Western Digital Corporation

80286 schematic

Abstract: fe3031 80286 mouse Western Digital floppy disk FE3021A FE3001a FE3031A CHIPset for 80286 8042 keyboard controller floppy controller
Contextual Info: V m =1710226 O O G b b ll T • UDC " T '5 2 - 3 V 2 . 1 FE3021A Address Buffer and Memory Controller g? WESTERN DIGITAL WESTERN D IG IT A L CORP HOE D H =1716523 aO O bblE 1 HUDC FE3021A TABLE OF C O N TEN TS T-52-33-21 Page P R E F A C E .

HX8347-G

Contextual Info: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver