marking code vishay label
Abstract: vishay transistor date code sot23 Transistor marking p2 TO50 package TO50 transistor Transistor marking code K marking code diode 04 marking V9 marking code vishay VISHAY SOT23 DATE CODE
Contextual Info: VISHAY Vishay Semiconductors Marking on RF Components SOD80 - QuadroMELF view from top TO50 3 Pin Cathodering 19241 unwind 19244 Label with information of TYPE on reel and package MicroMELF TO50 (4 Pin) view from top Cathodering unwind 19242 Label with information of TYPE on reel and package
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15-nov-04ot323ot143rot343r+13ot363ot490od523marking code vishay labelvishay transistor date codesot23 transistor marking p2to50 packageto50 transistortransistor marking code kmarking code diode 04marking v9marking code vishayvishay sot23 date code
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SMD Transistors w04
Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Contextual Info: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package
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ot143bfs17wbfs17aws858ta3+16tsdf1205ws503trwtsdf1220ws504trwtsdf1250ws505trwsmd transistors w04smd transistor w18w2f smd transistorw18 smd transistorsmd transistor w04smd transistor w03transistor w2f sot23transistor smd w04smd w2f transistorsmd transistor marking e5
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TO50 transistor
Abstract: TO50 package diode 0102 TO-50 marking code vishay label SOD80 sot23 transistor code marking CODE 32 VISHAY MARKING CODE 32 marking code
Contextual Info: Vishay Semiconductors Marking on RF Components view from top Cathodering TO50 3 Pin unwind SOD80 MiniMELF Label with information of TYPE on reel and package view from top Cathodering TO50 (4 Pin) Document Number 84071 01-02 unwind SOD80 – QuadroMELF Label with information of TYPE on reel and package
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ot143ot143rot323ot343+12ot343rot363to50 transistorto50 packagediode 0102to-50marking code vishay labelsod80sot23 transistor codemarking code 32vishay marking code32 marking code
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TO50 package
Abstract: TO-50 to50
Contextual Info: TO-50 4 VISHAY Vishay Semiconductors TO-50(4) Package Dimensions in mm 96 12242 Document Number 84038 Rev. 1.1, 10-Feb-04 www.vishay.com 1 TO-50(4) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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10-feb-04d-74025to50 packageto-50+1to50
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TO50 package
Abstract: TO-50 12244 to50
Contextual Info: TO-50 3 VISHAY Vishay Semiconductors TO-50(3) Package Dimensions in mm 96 12244 Document Number 84039 Rev. 1.1, 10-Feb-04 www.vishay.com 1 TO-50(3) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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10-feb-04d-74025to50 packageto-50+212244to50
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BF480
Abstract: R950 Avantek S 2n3570 2SC988
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619
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2n66192n6620bfr15ama42260-2b7+8mm2261-2b72n65972n6598bf480r950avantek s2n35702sc988
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TO50 package
Abstract: TO50 transistor SMD TRANSISTOR sot23 "material composition"
Contextual Info: Vishay Telefunken The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future
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to50 packageto50 transistorsmd transistorsot23 "material composition |
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TO50 package
Abstract: TBA 611 TO50 transistor SMD TRANSISTOR smd-transistor 1p1n TRANSISTOR SMD catalog germanium diode smd
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future
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to50 packagetba 611to50 transistorsmd transistor+3smd-transistor 1p1ntransistor smd cataloggermanium diode smd
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TO50 package
Abstract: BF966 BF966S
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf966s2002/95/ec2002/96/ecbf966sa+5bf966sbbf966dd-74025to50 packagebf966
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BF964
Abstract: BF964SA BF964S BF964SB TO50 package
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
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bf964sbf964sabf964sbbf96s+3d-74025bf964to50 package
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BF964SA
Abstract: BF964S BF964SB TO50 package BF964
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf964s2002/95/ec2002/96/ecd-74025+515-apr-05bf964sabf964sbto50 packagebf964
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TO50 package
Abstract: BF964S
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf964s2002/95/ec2002/96/ecbf964sa+3bf964sb08-apr-05to50 package
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BF961
Abstract: BF961A BF961B TO50 package bf-961
Contextual Info: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf9612002/95/ec2002/96/ec08-apr-05+4bf961abf961bto50 packagebf-961
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TO50 package
Abstract: BF961
Contextual Info: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf9612002/95/ec2002/96/ecbf961a+4bf961bd-7402515-apr-05to50 package
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780024Y
Abstract: 780034Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y uPD78F0034 TO50 package mPD78F0034 PA-FLASH64GC
Contextual Info: DATA SHEET INFORMATION PRELIMINARY PRODUCT MOS INTEGRATED CIRCUIT mPD78F0034 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78F0034 is a product of the mPD780034 Subseries in the 78K/0 Series and equivalent to the mPD780034 with a flash memory in place of internal ROM.
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mpd78f0034pd78f0034mpd78003478k/0+10mpd780024780024y780034yupd78054yupd78058fyupd78070ayupd78078yupd78f0034to50 packagepa-flash64gc
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BF966S
Abstract: BF966 BF966SA BF966SB TO50 package
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf966s2002/95/ec2002/96/ec08-apr-05+4bf966bf966sabf966sbto50 package
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BF966SA
Abstract: BF966S BF966 BF966SB TO50 package MA1300
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
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bf966sbf966sabf966sbd-74025+3bf966to50 packagema1300
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BF988A
Abstract: BF988B TO50 package
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance
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bf9882002/95/ec2002/96/ecbf988a+4bf988bd-7402515-apr-05to50 package
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MEM-539
Abstract: DxD00 FE9200 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 MPD780964 uPD780964
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT mPD78F0964 8-BIT SINGLE-CHIP MICROCONTROLLER The mPD78F0964 is a member of the mPD780964 Subseries of the 78K/0 Series that substitute flash memory for the internal ROM of the mPD780964. Since it is possible to perform program write operation while mounted on a board, it is suited for applications
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mpd78f0964mpd78096478k/0mpd780924+10hp9000mem-539dxd00fe9200hp 1458upd780018upd78070aupd78070ayupd78078upd780964
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nec 78k flash memory write
Abstract: nec 78k flash memory write function number uPD78F0034Y 780024Y 780034Y uPD78054Y uPD78058FY uPD78070AY uPD78078Y TO50 package
Contextual Info: PRELIMINARY PRODUCT PRELIMINARY PRODUCTINFORMATION INFORMATION MOS INTEGRATED CIRCUIT mPD78F0034Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78F0034Y is a product of the mPD780034Y Subseries in the 78K/0 Series and equivalent to the mPD780034Y with a flash memory in place of internal ROM.
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mpd78f0034ypd78f0034ympd780034y78k/0+11mpd780024780024y780034ynec 78k flash memory writenec 78k flash memory write function numberupd78f0034yupd78054yupd78058fyupd78070ayupd78078yto50 package
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uPD780924
Abstract: uPD78F0924 hp 1458 uPD780018 uPD78070A uPD78070AY uPD78078 uPD78078Y TO50 package
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT mPD78F0924 8-BIT SINGLE-CHIP MICROCONTROLLER The µPD78F0924 is a member of the mPD780924 Subseries of the 78K/0 Series that substitute flash memory for the internal ROM of the mPD780924. Since it is possible to perform program write operation while mounted on a board, it is suited for applications
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mpd78f0924pd78f0924mpd78092478k/0+10hp9000upd780924upd78f0924hp 1458upd780018upd78070aupd78070ayupd78078upd78078yto50 package
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TO50 package
Abstract: BF988 BF988A BF988B
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance
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bf9882002/95/ec2002/96/ec08-apr-05+3to50 packagebf988abf988b
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smd-transistor DATA BOOK
Abstract: rele smd sod-80 SMD TBA 860 TO50 package carbon and its compounds DO220 smd-transistor TRANSISTOR SMD catalog TBA 611
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future
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smd-transistor data bookrele smdsod-80 smdtba 860+6to50 packagecarbon and its compoundsdo220smd-transistortransistor smd catalogtba 611
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BF988A
Abstract: BF988 BF988B TO50 package
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance
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bf988bf988abf988bbf988s+3d-7402525-nov-04to50 package
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