TO36 PACKAGE Search Results

germanium transistor pnp

Abstract: nte213
Contextual Info: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:

NTE105

Abstract: TO36 package pnp germanium to36 Germanium power
Contextual Info: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

BLW 82

Abstract: p106 P127 DD15
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

BLW 82

Abstract: p106 P127 transistor p86 DD15 TO13
Contextual Info: VDDE P102/TO10/CTX0 P101/TO9/CRX0 P100/TO8 P117/TO7/TO36/DD4 P116/TO6/TO35/DD5 P115/TO5/TO34/DD6 P114/TO4/TO33/DD7 P113/TO3/TO32/DD8 P112/TO2/TO31/DD9 P111/TO1/TO30/DD10 P110/TO0/TO29/DD11 VSS VCCE FP MOD1 MOD0 RESET# P97/TO20/DD12 P96/TO19/DD13 P95/TO18/RXD5/DD14

germanium

Abstract: pnp germanium to36 AD167 2n2063 ASZ1018 2n1182 2N1202 2N1666 2N2063A AD166
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max ON) r HFE fT ICBO Max Max (CE)sat Max ~Oper Max Min (Hz) (A) (8) (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . .15 .

LT049

Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .

Contextual Info: E G & G/CANADA/OPTOELEK SGD/YAG Series: 47E D • 303Dbl0 00D032M 2 ■ CANA Multi-Element T-V/-53 Features • • • Cross Talk > 1 % Between Elements Oxide Passivated Wide Spectral Range • • • Planar Diffused Structure Wide Spectral Range Linearity Over Wide Dynamic Range

2sc1030 hitachi

Abstract: 2SC1445 SANKEN 2SC681A HITACHI 2sd82 sanken 2SC2577 sanken Sanken 2SC1111 2SD82 BD199 2SD180 2Sc2316
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) Of) PD r ICBO Max hFE fT ON) Min (Hz) Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style 175 175 175 175 140 140 140 140 140 140 TO-3 TO-36 TO-36 TO-3 TO-3

2N1100

Abstract: 2N2082 2n441 2N1523 2N443 2N4048 2N174 2N442 2N2076 2N277
Contextual Info: germanium power transistors 153 PNP ALLOY TRANSISTORS Up to 65 Amp RATED BREAKDOWN VOLTAGES TfPE NU~'BERS 2N 173 2N 174 2N 277 2N 278 2N441 2N442 2N443 2N 1099 2N 1100 2N 1358 2N 1412 2N 1970 2N 1980 2N 1981 2N 1982 2N 2075 2N 2076 2N 2077 2N 2078 2N 2079

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

SN74LVC08

Contextual Info: SN74LVC08 QUADRUPLE 2-INPUT POSITIVE-AND GATE S C A S 2 8 3 - JANUARY 1 9 9 3 -R E V IS E D MARCH 1994 D, DB, OR PW PACKAGE TOP VIEW EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Typical Vo lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

MIL-STD-2020

Contextual Info: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width

Contextual Info: SN74LVC137 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER WITH ADDRESS LATCHES SCAS340 - MARCH 1994 D, DB, OR PW PACKAGE TOP VIEW EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Typical Vo lp (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C

ECG130

Abstract: ECG222 ECG216 ECG196 ECG197 ECG210 ECG198 ECG192A ECG193A ECG194
Contextual Info: Transistors cont'd ECG193A ECG194 ECG195A ECG196 C ollector To Base Volts BV c b O Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) 70 (Compl to ECG192A) MPN-Si, Gen Purp HV Amp, 180 Hi Speed Sw NPN-Si, RF Pwr Amp/Driver 70

BD947

Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

Contextual Info: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are

ECG348

Abstract: RF-38S ECG331 ECG333 ECG327 ECG328 ECG332MCP ECG323 ECG324 ecg32
Contextual Info: Transistors cont'd ECG Type ECG324 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BVCBo Collector To Emitter Volts bv Ceo Base to Emitter Volts B V Eb o Max. Collector Current Iq A m p s NPN-Si, AF Pwr Amp

250BG

Contextual Info: E G & 6/CANADA/0PT0ELEK 47E 3D30blü I> 0QD030f l 4 • CANA UV Series -V /-5 1 Features • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • Linearity Over Wide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers