TO254P1524X482 Search Results

tc143e

Abstract: 25E5 tube FDB2552 m062 MOTOR tc2-16 marking m062
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150 V, 37 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 16 A • Consumer Appliances • QG(tot) = 39 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge

solar charge circuit max 856

Abstract: FDB035N10A
Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

TO254P1524X482-3N

Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDB86135

Contextual Info: FDB86135 tm N-Channel PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDP16AN08A0

Abstract: RG331
Contextual Info: FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 m Ω Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Battery Protection Circuit

Contextual Info: FDB150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored

FDB035AN06A0

Abstract: NL104
Contextual Info: FDB035AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Ω Features Applications • RDS on = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 95 nC ( Typ.) @ V GS = 10 V • Battery Protection Circuit

Contextual Info: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDB86135 N-Channel PowerTrench MOSFET tm 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

R860P2

Abstract: TA49409 TO254P1524X482 ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST TB334 R860P
Contextual Info: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

FDP2532 Mosfet

Abstract: FDP2532 FDB2532 FDB2532/FDP2532/FDI2532
Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150 V, 79 A, 16 mΩ Features Applications • RDS on = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • Consumer Appliances • QG(tot) = 82 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge

Contextual Info: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

dual diode marking A3

Contextual Info: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDP3682

Abstract: kp32 tube
Contextual Info: FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge

r860p2

Abstract: TO254P1524X482-3N TO254P1524X482 MOSFET 3N 200 R860S3S ISL9R860P2
Contextual Info: ISL9R860P2, ISL9R860S3ST Features • Stealth Recovery trr = 28 ns @ IF = 8 A • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switch Mode Power Supplies