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    FDB035N10A Search Results

    FDB035N10A Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDB035N10A
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A D2PAK Original PDF 9
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    FDB035N10A Price and Stock

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    onsemi FDB035N10A

    N-Channel PowerTrench® MOSFET 100V 214A 3.5mΩ
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    Master Electronics FDB035N10A 440
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    FDB035N10A 507 1
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    FDB035N10A 380 138
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    Avnet Americas FDB035N10A Tape & Reel 800 35 Weeks 800
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    Arrow Electronics () FDB035N10A 1,600 78 Weeks 800
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    FDB035N10A 800 78 Weeks 800
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    FDB035N10A Cut Strips 507 1
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    FDB035N10A Cut Strips 171 78 Weeks 1
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    Newark () FDB035N10A Cut Tape 828 1
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    FDB035N10A Tape & Reel 828 100
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    Future Electronics () FDB035N10A Reel 51,200 19 Weeks 800
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    FDB035N10A Reel 19 Weeks 800
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    Onlinecomponents.com FDB035N10A 440
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    Rochester Electronics FDB035N10A 380 1
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    TME FDB035N10A 800
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    Richardson RFPD FDB035N10A 800
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    Avnet Asia FDB035N10A 78 Weeks 800
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    Flip Electronics FDB035N10A 1,600
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    Others FDB035N10A

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    Chip 1 Exchange FDB035N10A 800
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    Fairchild Semiconductor Corporation FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    Win Source Electronics FDB035N10A 9,600
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    FDB035N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    solar charge circuit max 856

    Abstract: FDB035N10A
    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    fdb035n10asolar charge circuit max 856 PDF

    TO254P1524X482-3N

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    fdb035n10ato254p1524x482-3n PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    fdb035n10a PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    fdb035n10a PDF

    dual diode marking A3

    Contextual Info: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    fdb035n10adual diode marking a3 PDF