TO252 RTHJC Search Results

Contextual Info: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252

SPD35N10

Abstract: 35n10 P-TO252 Q67042-S4125
Contextual Info: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 44 m
ID 35 A
Avalanche rated P-TO252
dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code

06n80c3

Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

2N0623

Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
Contextual Info: SPD30N06S2-23 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420

06n80c3

Abstract: P-TO252 SPD06N80C3
Contextual Info: SPD06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

PN06L13

Contextual Info: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
Logic Level V m
12.7 50 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

2N0615

Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Contextual Info: SPD30N06S2-15 OptiMOS
Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253

2n0680

Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423

2N0623

Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
Contextual Info: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 23 m
ID 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420

2N0615

Abstract: SPD30N06S2-15
Contextual Info: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
14.7 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253

2N0640

Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
Contextual Info: SPD25N06S2-40 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427

2N0822

Abstract: SPD30N08S2-22
Contextual Info: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
21.5 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413

PN06L13

Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Contextual Info: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

PN06L13

Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
Contextual Info: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

2N0640

Abstract: MAX408
Contextual Info: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 40 m
ID 29 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427

pn0614

Abstract: Q67060-S7418 smd diode 67A
Contextual Info: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
14.4 50 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418

Contextual Info: Features Description • Short circuit protection N channel power FET with charge pump, ground referenced CMOS compatible input and diagnostic output with integrated protective functions. • Current limitation • Thermal shutdown with restart. TO252-5L • Overvoltage protection including load dump

01N60S5

Abstract: 01n60 SPD01N60S5 SPU01N60S5
Contextual Info: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252

Contextual Info: SPU06N80C2 SPD06N80C2 Target data sheet Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Worldwide best R DS on in TO251 and TO252 · Ultra low gate charge · Periodic avalanche rated

4x1N4001

Abstract: CL-21 capacitor cq 622 CQ 417 VDR07 VDR06 AEP02792 4307 VDR025 AES02793
Contextual Info: Power-Charge-Pump and Low-Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features • • • • High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit P-TO252-5-1 Very Low Drop Voltage Regulator Features

marking 113a

Contextual Info: SPD50N03S2L-06 h OptiMOS&!Power-Transistor Feature % N-Channel Product Summary VDS 30 V % Enhancement mode RDS on 6.4 m" % Logic Level ID 50 A Ph- TO252 -3 % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance

pn0307

Contextual Info: SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated