TO220FI Search Results

NPN Transistor VCEO 1000V

Abstract: 2SC5416 NPN Transistor VCEO 1000V ic15a
Contextual Info: Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)

EN5817

Abstract: TA-1043 2SC5417 58173
Contextual Info: Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)

Contextual Info: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30

Contextual Info: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.

M9412

Abstract: 2SC5047
Contextual Info: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base

IT1172

Contextual Info: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications

TO-126LP

Contextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle

2SK2632

Abstract: 2SK2636 TS9938 2SK2436 2SK2634
Contextual Info: • AP Series Lineup New H-lll Series VDSS = 800V, N- channel Absolute maximum ratings atTa =25°C Type No. Package Vtm m 2SK2631 TP 2SK2632 TO-220FI TS9928 TO-220FI A ^DS(on) typ/max at V«*=15V Cita Crss typ (PF) Qg typ <nC) (300) (45) (8) 3.6/4.8 550

Contextual Info: BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns typ Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ)

Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

FL4037

Contextual Info: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications

STP3NA100

Abstract: STP3NA100FI
Contextual Info: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STP3NA100 STP3NA100FI 1000 V 1000 V <5 Ω <5Ω 3.5 A 2A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

K4089

Abstract: 2SK4089LS
Contextual Info: 2SK4089LS Ordering number : ENA0557 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4089LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

EN8624

Abstract: 2SK3095LS
Contextual Info: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.

2sc6093

Abstract: 2SC6093LS
Contextual Info: 2SC6093LS Ordering number : ENA0274 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6093LS Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

K2632

Abstract: 2SK2632LS 2SK2632 TA-2380 K263 TO-220FI-LS
Contextual Info: 注文コード No. N 5 5 3 1 B 2SK2632LS No. N 5 5 3 1 B N2000 新 半導体ニューズ No.N5531A とさしかえてください。 2SK2632LS 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。

2SK1446

Contextual Info: Ordering number:EN3449A N-Channel Silicon MOSFET 2SK1446 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1446] 4.5

2SK1445

Contextual Info: Ordering number:EN3448A N-Channel Silicon MOSFET 2SK1445 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1445] 4.5

DD84SCLS

Contextual Info: Ordering number : ENN5891A DD84SCLS Silicon Diffused Junction Type DD84SCLS Damper Diode for Ultrahigh-Definition Display Applications Features [DD84SCLS] 4.5 10.0 3.2 2.8 0.9 1.2 14.0 3.6 1.0 16.1 • unit : mm 1253A 0.6 • High breakdown voltage VRRM=1600V .

2SK1444

Abstract: 34473
Contextual Info: Ordering number:EN3447C N-Channel Silicon MOSFET 2SK1444 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating easy mounting. unit:mm 2078B [2SK1444] 4.5

TN4R05

Contextual Info: TN4R05 Ordering number : ENA0212 ExPD Excellent Power Device TN4R05 Switching Regulator IC for RCC Method Power Supplies Applications Features • • • • • Original control IC for Delay RCC-type. High voltage power MOSFET with current sense. Overload protection.

200v 5A mosfet

Abstract: 2sk4198 2SK4198LS k4198 K419
Contextual Info: 2SK4198LS Ordering number : ENA1171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

A1270

Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

RD2004

Contextual Info: RD2004LS-SB5 Ordering number : ENA1612 SANYO Semiconductors DATA SHEET RD2004LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.