TO-94 TRANSISTOR Search Results

ST3904

Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.

2N5306 NATIONAL SEMICONDUCTOR

Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2

A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Contextual Info: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C

c732

Abstract: 000M2S4 BCX22 BCX24 BCX94 Q62702-C732 Q62702-C750
Contextual Info: 2SC » • ÛH3SbOS 0004554 T ■ S I E 6 r NPN Silicon AF Transistors - -r-an-ri BCX 22 BCX 24 25C 0 4 7 5 4 0 - B C X 94 SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

9a2 diode

Abstract: JC86
Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD = 600 V = 7.8 A ^ D S o n = 0 -9 BUZ 94 O • N channel • E nhancem ent mode • A valanche-proof • Package: TO -204 AA (T O -3 )') Type Ordering code BUZ 94 C 670 78-A 101 9-A2 Parameter Symbol Values Unit

9a2 diode

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 N channel Enhancement m ode Type ^ DS Id ^ D S o n Package 11 Ordering Code BUZ 94 600 V 7.8 A 0.9 n TO-204 AA C67078-A101 9-A2 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 27 "C Id 7.8 Pulsed drain current, Tc = 25 "C

5962-9054301MQA

Abstract: 5962-9054304MQA qml-38535 smd transistor db2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R218-94. 94-07-20 Monica L. Poelking B Changes in accordance with NOR 5962-R068-95. 95-02-17 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 requirements. - CFS

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

94B DIODE

Abstract: BDw 32 w94C
Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BDW 94 BDW 94A BDW 94B

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

BFW92

Contextual Info: BFW92 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

lr 3103

Abstract: ER6V
Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

LB1200

Abstract: T092 ZTX953 LB120
Contextual Info: PNP SILICON PLANAR MEDIUM POWER I HIGH CURRENT TRANSISTOR CorltinUOUs “ LJp to 10 Amps * Very * Excellent * Spice I ZTX953 1 ISSUE 4- JUNE 94 FEATIJRES + ~fj A~ps I ~ current /’ q peak current low saturation voltage gain up to 10 Amps moclel available

BFR91A

Abstract: transistor BFR91A apr 241 BFR91A transistor datasheet marking 544 amplifier
Contextual Info: BFR91A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91A Marking: BFR91A Plastic case TO 50

BFW92A

Contextual Info: BFW92A Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings

BFR90A

Contextual Info: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50

BFR96TS

Contextual Info: BFR96TS Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96TS Marking: BFR96TS Plastic case TO 50

BFW92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

ZBD953

Contextual Info: PNP SIUCON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V CBO -140 V PARAMETER

BFW92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

bfw92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

BFR96

Abstract: BFR96T
Contextual Info: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50

Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 1 Amp * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage