TO-94 TRANSISTOR Search Results

2N5306 NATIONAL SEMICONDUCTOR

Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2

A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Contextual Info: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

BFR91A

Abstract: transistor BFR91A apr 241 BFR91A transistor datasheet marking 544 amplifier
Contextual Info: BFR91A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91A Marking: BFR91A Plastic case TO 50

BFW92A

Contextual Info: BFW92A Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings

BFR90A

Contextual Info: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50

ZBD953

Contextual Info: PNP SIUCON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V CBO -140 V PARAMETER

BFW92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

bfw92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

BFR96

Abstract: BFR96T
Contextual Info: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50

BFW92

Abstract: telefunken telefunken IC
Contextual Info: BFW92 Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92 Marking: BFW92 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage

BDV96

Abstract: BDV94 BDV91 BDV92
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION •Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95

BF970

Abstract: BF970 transistor
Contextual Info: BF970 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

Contextual Info: BFG93A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579 94 9279

Contextual Info: BFG93A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579 94 9279

BF970

Abstract: 85005 500WF
Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

BFW92A

Contextual Info: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A

Contextual Info: Mounting parts for h eatsinks m aterial flam m ability polyamide 6 , G F reinforced UL V-0 94 Sockets for power transistors TO 3 dim. [mm] number of contacts insulator contact current rating contact resistance tem perature range insulation resistance capacity

IGBT ac switch circuit

Abstract: mosfet ac switch GBAN-PVI-1 MPIC-5 parallel mosfet ultrafast igbt MOSFET designer manual AC SWITCH gban IGBT parallel power cycling
Contextual Info: Technical Papers DT 94-5 USING MOS-GATED POWER TRANSISTOR IN AC SWITCH APPLICATIONS by Donald A. Dapkus II Problem: The IGBT and the power MOSFET are not suited to switching AC waveforms directly. The IGBT can only conduct current in one direction due to its use of

MPSA92

Abstract: MPSA92 datasheet FXTA92 DSA003759
Contextual Info: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA92 ISSUE 1 – MARCH 94 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA92 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BDT93

Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96

BFW92A

Contextual Info: BFW92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A