TO-92 MOSFET 1A Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

stq1ne10l

Abstract: Q1NE10L stq1ne10l-ap
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92

2N7000 MOSFET

Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of

Contextual Info: SJV01N60 1A , 600V , RDS ON 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking

SJV01N65B

Abstract: MosFET
Contextual Info: SJV01N65B 1A , 650V , RDS ON 14Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking

mosfet equivalent

Abstract: 0401L MTN0401LA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 1/4 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Equivalent Circuit Outline MTN0401LA3 TO-92 G：Gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

ST2N

Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications

to-92 mosfet 1A

Abstract: power mosfet to92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in

mosfet to92 low voltage

Abstract: power mosfet to92 high current to-92 mosfet 1A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

STQ1NE10L-AP

Abstract: q1ne10l Q1NE10
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive

Q1NE10L

Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive

Coilcraft Taiwan

Abstract: max731
Contextual Info: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load

1N5817

Abstract: ITS220 MAX731 MAX731CPA MAX731EVKIT-DIP MAXC001 PCH-27-223
Contextual Info: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load

1hnk60

Abstract: d1nk60 t4 MARKING SOT223 stn1hnk60 STD1NK60 STQ1HNK60R-AP STQ1HNK60R STD1NK60-1 STD1NK60T4 1HNK60R
Contextual Info: STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on 600 600 600 600

Si9122

Contextual Info: 500-kHz DC/DC Converter with Secondary Synchronous Rectifier Timing FEATURES • • • • Input voltage of 12 to 72 V Up to 92% efficiency Integrated primary MOSFET drivers Secondary synchronous rectifier control with programmable deadtime delay • Programmable oscillator frequency up to 500 kHz

Contextual Info: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE

Contextual Info: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE

STQ1NE10L

Abstract: schematic diagram dc-dc transistor c 458
Contextual Info: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE

N-Channel mosfet 600v 1a

Abstract: 600V 2A MOSFET N-channel power mosfet 600v transistor 600v. 1a. to 92 mosfet 600v Advanced Power MOSFET DIODE 3A 600V single HIGH SPEED POWER MOSFET mosfet 1A to 92 100V single n-channel
Contextual Info: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without

TSM1N60S

Abstract: TSM1N60SCT
Contextual Info: TSM1N60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features

LP0701

Abstract: LP0701LG LP0701N3 LP0701ND
Contextual Info: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

to-92 mosfet 1A

Abstract: LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND
Contextual Info: LP0701 LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Dice -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND 7 Advanced MOS Technology