TO-92 MOSFET Search Results

bfw11 jfet

Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72

2M5457

Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
Contextual Info: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N7000 TO-92

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS 2N7000 TO-92 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

stq1ne10l

Abstract: Q1NE10L stq1ne10l-ap
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92

RL30A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

2N7000 TO-92

Abstract: to-92 mosfet VDS-10 2N7000
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N7000 TO-92 MOSFET N-Channel 1. SOURCE FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

equivalent of BS170

Abstract: 2n7000 equivalent mosfet bs170 BS270 mosfet 2n7000 2N7000BU EQUIVALENT FOR bs170 2N7000 MOSFET 2N7000TA BS170
Contextual Info: Discrete MOSFET TO-92 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-92 N-Channel BS270 60 Single 2 - - - - 0.4 0.63 2N7000BU 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single

TP0610T

Abstract: SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104
Contextual Info: Selector Guide P-Channel Enhancement Mode MOSFETs Device LP0701 BVDSS V -16.5 RDS(ON) max ID(ON) min CISS max VGS(TH) max (Ω) (A) (pF) (V) 1.5 -1.25 250 -1.0 Package Options Application Notes 3-Lead TO-92 (N3) AN-D14 8-Lead SOIC (LG) - 3-Lead TO-92 (N3)

Contextual Info: TO-92 Plastic-Encapsulate MOSFET 2N7000 MOSFET N-Channel TO-92 FEATURES z z z z 1. SOURCE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2. GATE 3. DRAIN 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

REGULATOR mc7812ct

Abstract: MC7815BT c843 TL494CN UC3842AN LM340T12 MC79L12ACP LM340AT12 LM323AT SG3525AN
Contextual Info: ON Semiconductor Voltage Regulators and Switching Regulators Voltage Regulators Continued Linear Voltage Regulators (Continued) Fixed Output (Continued) Mfr.'s Type Positive Regulator Negative Regulator Case 29/TO-92 Case 221A Case 369A Case 751/SO-8 Case 29/TO-92

Linear Regulator sot-89

Abstract: Fortune Semiconductor FS8856 FS8856-33CL FS8856-33PL
Contextual Info: FS8856 550mA LDO Linear Regulator General Description Ordering Information The FS8856 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 550mA output current. FS8856-xx x x Package D : TO-92 E : TO-92

VNDQ1CHP

Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Contextual Info: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

P-Channel Depletion Mosfet datasheet

Abstract: pj 72 diode P-Channel Depletion-Mode sot 23 702 N-Channel Depletion-Mode MOSFET high voltage pj 54 diode n1 sot-23 ic 701 n channel depletion MOSFET 702 mosfet
Contextual Info: 1 Product Nomenclature/Ordering Information • N- and P-channel low/high voltage complements for simple circuit configuration and low power consumption. • Surface mount packaging. • TO-92, tape & reel, and lead bends to fit into TO-5, TO-18, or TO-220 sockets; TO-92 also available with surface mount

Contextual Info: SSK2N7002E N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.4A TO-92 RDS(ON) (Ω) Max 3.0 @VGS = 10V 4.0 @VGS = 5V S G D D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. TO-92 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

2N7002 SOT23

Abstract: ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

Small Signal MOSFET

Contextual Info: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

ST2N transistor

Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application