TO-59 PACKAGE Search Results

SDR625/59

Contextual Info: SDR623/59 Thru SDR626/59 ` Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 1/ TO-59 20A 35nsec 300-600 V Hyper Fast Rectifier

CZP1JFTTD221P

Abstract: PM 1j
Contextual Info: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:59 PM Page 59 PMS 300 neg. Black neg. CZP multilayer power ferrite bead EU features • Designed to reduce noise at high frequencies • Standard EIA packages: 1J, 2A, 2B • Nickel barrier with solder overcoat for excellent

memory stick pro duo assembly code

Abstract: SD Card and MMC Reader MD5-12 pin diagram of core duo cpu Secure Digital USB2250 USB2251 USB2259 SMC SD MMC card reader
Contextual Info: USB2250/51/59 Ultra Fast USB 2.0 Multi-Format Flash Media Controller Datasheet PRODUCT FEATURES General Description „ The SMSC USB2250/51/59 is a USB 2.0 compliant, high speed Mass Storage Class Peripheral Controller intended for reading and writing to more than 24 popular flash media

STAC9758T

Abstract: alesis adat power supply STAC9758 soundblaster STAC9759T alesis adat
Contextual Info: PRODUCT BRIEF STAC9758/59 Integrated Mixed-Signal Solutions Six Channel AC’97 2.3 Codecs OVERVIEW DESCRIPTION High performance 6-channel AC’97 2.3 codecs with high Signal-to-Noise ratio and low distortion. SigmaTel’s STAC9758/59 are general purpose 20-bit, full duplex, 6-Channel audio codecs conforming to the analog component specification of

M832

Contextual Info: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-19,-29,-39,-49,-59 Features • • • • frequency range, DC to 8 GHz useable to 10 GHz up to 17.7 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

D1477

Abstract: 2SJ185 2SK1399
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm 1 3 1.1 to 1.4 +0.1 0.16 –0.06 Marking 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK1399 SC-59 (Mini Mold)

Contextual Info: 1SS226 TO SHIBA 1SS226 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.5 2 . 5 - 0.3 : SC-59 : Vp 3 = 0.9V (Typ.)

toshiba pro

Contextual Info: 1SS226 TO SHIBA 1SS226 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.5 2 . 5 - 0.3 : SC-59 : Vp 3 = 0.9V (Typ.)

CT70

Abstract: CT54 CT40 CT41 CT42 CT43 CT44 CT45 CT46 CT47
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD CT 40 TO CT 59 CT 70 TO CT 79 500mW DO- 35 Glass Axial Package FEATURES General Purpose Hermetically Sealed Glass Package Switching Diode

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

lee -19 Monolithic amplifiers

Contextual Info: ! NEW LEE-19 • LEE-29 • LEE-39 Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

LEE-29

Contextual Info: Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz ! NEW LEE-19 • LEE-29 • LEE-39 LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

Contextual Info: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)

Contextual Info: MDD44-14N1B Standard Rectifier Module VRRM = 2x 1400 V I FAV = 59 A VF = 1.26 V Phase leg Part number MDD44-14N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling

D6011

Abstract: Gali-49
Contextual Info: W! NEGali Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 7 GHz 19 • Gali 29 • Gali 39 Gali 49 • Gali 59 Features • • • • miniature SOT-89 package frequency range, DC to 7 GHz up to 17.6 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

TO-59 Package

Abstract: 2n3265 2N4002 2N3597 80240C TO61 package 2N6279 TO63 package 25120
Contextual Info: BIPOLAR MPN POW ER TRANSISTORS PACKAGE TO-1 1 1 PACKAGE TO-59 PACKAGE TO-61 PACKAGE TO-63 DEVICE TYPE BVceo vous 2N2877 2N2878 2H2879 2N3996-* T VCE sät max VOLTS AMPS hFE min/max *C @ VCE A V 50 5.0 20-60 1.0/2.0 2.0 5.0/0.5 50 5.0 40-120 2.0 5.0/0.5 70

4841NH

Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
Contextual Info: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Contextual Info: Aeroflex Colorado Springs SMMIT Handbook Edits since 4-02 Handbook Production Edits made 1-13 Page 156 Updated package drawing in Figure 59 Previous Edits Page 13 Chapter 2 2.1.8, 3rd paragraph changed to: The Time-Tag counter begins operation on the rising edge or

Contextual Info: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3

Contextual Info: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)

lc99067

Abstract: LC89901V LC99001 LC9997GL LC9998GL Sanyo CCD LC9998G "Video telephone"
Contextual Info: PRODUCT INFORMATION Vol. 59 CCD Camera Signal-Processing IC Developed Extensive functionality, from the CCD drive timing generator to signal processing, integrated on a single chip LC99001 Overview Demand for miniature digital cameras is growing steadily due to their use in video conferencing and

FERRITE TRANSFORMER 20khz toroid

Abstract: 105c inductor 1mh 15A 50KHZ inductor HT EE 19 transformer FERRITE core ee TRANSFORMER 4mh inductor CHIP INDUCTOR 3.3uH 2.5A HIGH FREQUENCY Transformer ee 19A HM catalog mosfet Transistor smd datasheets FERRITE TRANSFORMER 20khz toroid
Contextual Info: bi441 short form 2007 dev.qxd 6/26/07 8:59 AM Page 19 Magnetics 19 Power Magnetics Transformers Model HM31 HM32 HM33 HM41 HM80 Industry Style Current Sense Current Sense Current Sense Gate Drive ISDN Isolation Inductance Range 1.3mH to 195mH 0.2mH to 85mH