TO-3P TRANSISTOR Search Results

transistor 2SB688

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SD718 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z Complementary to 2SB688 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications

PRSS0003ZA-A

Abstract: 3p transistor PRSS0004ZE-A TO3PFMV
Contextual Info: PM519 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form TO-3P PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2

036a transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO-3P 2SC5287 TRANSISTOR NPN 1. BASE FEATURES •High Voltage Switchihg Transistor 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5198 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z Low Collector Saturation Voltage z Good Linearity of hFE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors KTD998 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capability z High Power Amplifier Application 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5287 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Speed Switching 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Regulator and General Purpose Applications

TRANSISTOR C 2026

Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
Contextual Info: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200B TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
Contextual Info: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
Contextual Info: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

Contextual Info: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

2SA1093

Abstract: 2SC2563
Contextual Info: Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2SD718

Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
Contextual Info: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage

2SD2386

Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION

2SD2386

Abstract: 2SB1557 npn DARLINGTON 10A
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION

2SB688

Abstract: 2SD718
Contextual Info: Inchange Semiconductor Product Specification 2SB688 Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SD718 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage

2SC2563

Abstract: 2SA1093
Contextual Info: JMnic Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC2563 ・High transition frequency APPLICATIONS ・Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION 1 Emitter

npn DARLINGTON 10A

Abstract: 2SB1079 2SD1559 NPN POWER DARLINGTON TRANSISTORS TO-3P
Contextual Info: Inchange Semiconductor Product Specification 2SD1559 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB1079 ・DARLINGTON APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base

2SA1516

Abstract: 2SC3907 2sa151
Contextual Info: SavantIC Semiconductor Product Specification 2SA1516 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio

2SA1265N

Abstract: 2SC3182 2SA1265
Contextual Info: JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3182 ・2SA1265 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

22a ic

Abstract: 2SB1448 TP15J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P TP15J10 Unit : mm -15A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2sc3180n

Abstract: 2sa1263n 2SA1263 2sc318
Contextual Info: JMnic Product Specification 2SA1263N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3180N ・2SA1263 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to