TO-252 N-CHANNEL MOSFET Search Results

d1740

Abstract: NP55N04SUG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

ut3055

Abstract: diode BA 158 mosfet BA 95 S
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION

SSD5030N

Abstract: AIDM-110 South Sea Semiconductor
Contextual Info: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

apm4048d

Abstract: APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784
Contextual Info: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)=37mΩ (typ.) @ VGS= -10V (3) D1

APM4052D

Abstract: APM4052D* application notes apm4052 APM4052DU 40v 7.5a P-Channel N-Channel STD-020C APM4052DU4
Contextual Info: APM4052DU Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)= 30mΩ (typ.) @ VGS= 10V RDS(ON)= 46mΩ (typ.) @ VGS= 5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)= 40mΩ (typ.) @ VGS= -10V •

n-channel 500v sot 23 Power MOSFET

Abstract: "Power MOSFET" ENHANCEMENT MOSFET N-Channel 40V MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v pin diagram of MOSFET marking code B08 and MOSFET 500V 15A 400V power mosfet n-channel mosfet transistor
Contextual Info: TSM4ND50 500V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

SMD15N06

Contextual Info: SMD15N06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 60 0.10 @ VGS = 10 V 15 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD15N06 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

marking E11 DIODE

Abstract: E11 diode
Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

TSM4ND50

Abstract: MOSFET 500V 15A
Contextual Info: TSM4ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

B11 marking code

Abstract: 1A 700V MOSFET mosfet 700V 2A
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

UF3055

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION 1 TO-252 As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls

Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet marking code c0

Abstract: TSM4NB65
Contextual Info: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TSM1NB60CW

Abstract: N-Channel mosfet 600v 1a TSM1NB60 TSM1NB60CWRPG TSM1NB60CP
Contextual Info: TSM1NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

TSM6N50

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TSM4NB60CP

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet "marking code 44"

Abstract: TSM2NB60CP
Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 4.4 General Description TO-251 (IPAK) The TSM5NB50 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

DIODE D12

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This