TO 252 FOOTPRINT Search Results

TB304

Abstract: came
Contextual Info: Harris Semiconductor No. TB304 Harris Power February 1994 Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights This technical backgrounder is intended to show how Harris redesigned the TO-252 surface-mount power package into

TB304

Contextual Info: Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights Technical Brief This technical backgrounder is intended to show how Intersil redesigned the TO-252 surface-mount power package into the most reliable package of its type in the industry.

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

pn0307

Abstract: BSPD50N03S2-07 SPD50N03S2-07
Contextual Info: SPD50N03S2-07 Preliminary data OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 7.3 m
ID 50 A V P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11

to 252 footprint

Contextual Info: D-Pak TO-252 Footprint 7.0 (0.276) 7.0 (0.276) 1.5 (0.059) 1.5 (0.059) 2.5 2.3 (0.090) 2.3 (0.090) All dimensions in mm (inches) 6.9 (0.272)

pn0307

Abstract: BSPD50N03S2-07 SPD50N03S2-07
Contextual Info: SPD50N03S2-07 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 V RDS on 7.3 m
ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430

07n60c3

Abstract: 07N60
Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge

LPS5030

Contextual Info: Document 252-1 Power Chip Inductors – 1812PS Series • Economical alternative to larger shielded power inductors. • Ferrite cover provides magnetic shielding For new designs, we recommend the LPS4018 or LPS5030 as an alternative to this series. They offer

Contextual Info: BT151S series BT151M series GENERAL DESCRIPTION SOT428 SYMBOL TO-252 Glass passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling

DTO25

Contextual Info: DTO25 www.vishay.com Vishay Sfernice Surface Mounted Power Resistor Thick Film Technology FEATURES • AEC-Q200 qualified • 25 W at 25 °C case temperature • Surface mounted resistor - TO-252 DPAK style package • Wide resistance range: 0.016  to 700 k

Q67040-S4186

Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated

07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
Contextual Info: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)

d1 marking code dpak transistor

Contextual Info: MJD32CT4-A Low voltage PNP power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application

Date Code Marking STMicroelectronics PACKAGE DPAK

Abstract: 13473
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application

mjd44

Abstract: AM08852v1 MJD45H ST TAB 060
Contextual Info: MJD44H11, MJD45H11 Complementary power transistors Datasheet Features − production data . • Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 DPAK power package in tape and reel (suffix "T4") TAB2 3 1 Applications

SPU07N60S5

Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6

infineon 07n60s5

Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated

TJ3965RS

Abstract: tj3965d TJ3965F-ADJ-5L TJ3965D-ADJ TJ3965GR TJ3965GR-1 TJ3965 TJ3965D-2 1117 sot 89 TJ3965R-3
Contextual Info: 1.5A Ultra Low Dropout Linear Regulator TJ3965 MSOP8 / SOP8 / SOP8-PP PKG FEATURES Ultra Low Dropout Voltage Low Ground Pin Current Excellent Line and Load Regulation Guaranteed Output Current of 1.5A Available in MSOP8, SOP8, SOP8-PP, SOT-223, TO-252, TO-263, TO-220, and SOT-89 Packages

tj3965d

Abstract: SO-223 TJ3965
Contextual Info: 1.5A Ultra Low Dropout Linear Regulator FEATURES TJ3965 MSOP8 / SOP8 / SOP8-PP PKG Ultra Low Dropout Voltage Low Ground Pin Current Excellent Line and Load Regulation Guaranteed Output Current of 1.5A Available in MSOP8, SOP8, SOP8-PP, SOT-223, TO-252, TO-263, TO-220, and SOT-89 Packages

TJ3965

Abstract: TJ3965RS sot89 CA 19 TJ3965GR-1 3965F-ADJ
Contextual Info: 1.5A Ultra Low Dropout Linear Regulator TJ3965 MSOP8 / SOP8 / SOP8-PP PKG FEATURES Ultra Low Dropout Voltage Low Ground Pin Current Excellent Line and Load Regulation Guaranteed Output Current of 1.5A Available in MSOP8, SOP8, SOP8-PP, SOT-223, TO-252, TO-263, TO-220, and SOT-89 Packages

TJ3965

Abstract: SOP-8PP SOP-8-PP tj3965d 3965s TJ3965D-ADJ 3965F-ADJ
Contextual Info: 1.5A Ultra Low Dropout Linear Regulator FEATURES TJ3965 MSOP8 / SOP8 / SOP8-PP PKG Ultra Low Dropout Voltage Low Ground Pin Current Excellent Line and Load Regulation Guaranteed Output Current of 1.5A Available in MSOP8, SOP8, SOP8-PP, SOT-223, TO-252, TO-263, TO-220, and SOT-89 Packages

Contextual Info: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 1 1 2 TO-251 (IPAK) 40 V 3 1 • Linear current limitation

Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge R DS(on) 0.6 Ω •=Periodic avalanche rated