TO 225 EMITTER Search Results

2N6439

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6439

Abstract: UT25 coaxial VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

TVV020

Abstract: transistor B A O 331 d 331 transistor 1080 ASI10659 406G
Contextual Info: TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV020 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD 45° FEATURES: A D • Common Emitter • PG = 8.0 dB at 20 W/225 MHz • Omnigold Metalization System

Contextual Info: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

2N6439

Abstract: vk200* FERROXCUBE
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

TVV030

Abstract: ASI10660
Contextual Info: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System

TVV005

Abstract: ASI10654 TRANSISTOR A 225
Contextual Info: TVV005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV005 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System

RT6105

Abstract: RT6105X
Contextual Info: RT6105X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI RT6105X is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System

Contextual Info: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

Contextual Info: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

TVV010

Abstract: imd1
Contextual Info: TVV010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV010 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .380 4L STUD .112x45° A D B FEATURES: S • Common Emitter • PG = 10 dB at 10 W/225 MHz • Omnigold Metalization System

TVV014A

Abstract: ASI10658
Contextual Info: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System

TVV100

Abstract: ASI10662
Contextual Info: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System

ASI10657

Abstract: TVV014
Contextual Info: TVV014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R FEATURES: D • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System

SD1456

Contextual Info: SD1456 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1456 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • PG = 10 dB at 7.5 W/225 MHz • Omnigold Metalization System

TVV030A

Abstract: IC 555 ASI10661
Contextual Info: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

Contextual Info: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

VTV1250

Abstract: 125W225
Contextual Info: VTV1250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 8L FLG DESCRIPTION: C D The ASI VTV1250 is Designed for Television Band III Applications up to 225 MHz. A B 1 2 G FULL R O F E .1 25 • Common Emitter • PG = 12 dB at 125 W/225 MHz • Omnigold Metalization System

2N3402

Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

2N2713

Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘