TKW 4 Search Results

Contextual Info: TYPE "TKW" / "TKF ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ± 2 PPM / °C Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90 PPM / °C Below 1.0 Ohm

Contextual Info: TEPRO TYPE "TKW" / "TKF" ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ± 2 ppm / °C Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: ENVIRONMENTAL PERFORMANCE: Standard temperature coefficients:

Contextual Info: TEPRO TYPE "TKW" / "TKF" ELECTRO TECHNIK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS Standard temperature coefficients: ±90 PPM / °C Below 1.0 Ohm ±50 PPM / °C 1.0 Ohm - 9.9 Ohm ±20 PPM / °C 10 Ohm and beyond Electrical: Power .1 2 5 -3 watts Resistance:

Contextual Info: a su s /'vy^r— LW822-007 T V SMD Top View Package ft o a FE A T U R E S « B High Brightness Small SMD Package m & A PPLIC A T IO N S tkW B Ä Indicators Amusement mm Lighting nm illuminations I S ñ I f f l PRODUCT SUM M ARY Emitted Color D n m Features

7501C

Abstract: 7501cs 7501cn
Contextual Info: EL7501C EL7501C HIGH PERFORKWtCE ASAU36 tN TKW ED ClflCUffS 100V High SideDriver F e a tu r e s G e n e ra l D e sc r ip tio n • 100V H i g h S id e V o lta g e T h e E L 7 5 0 1 p r o v id e s a lo w c o s t s o lu tio n t o m a n y h i g h sid e d riv e a p p lic a tio n s . T h e E L 7 5 0 1 is D C c o u p le d so t h e r e a re n o

IS66WVD4M16ALL

Abstract: CellularRAM 66WVD4M16ALL
Contextual Info: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

Contextual Info: IS66WVD4M16ALL Advanced Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

Contextual Info: IS66WVD4M16ALL Preliminary Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

IS66WVD409616ALL-7010BLI

Contextual Info: IS66WVD409616ALL Advanced Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD409616ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

TKW 4

Contextual Info: TEPRO TYPE “TKW” / “TKF” ELECTRO TECHNIK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90ppm / °C Below 1.0Ω ±50ppm / °C 1.0Ω - 9.9Ω ±20ppm / °C 10Ω and beyond Electrical: Power .125 - 3 watts Resistance: 0.01 - 300 KΩ

Contextual Info: TEPRO TYPE “TKW’ / ‘TKF” ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ±2 PPM / 00 Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90PPM /00 Below 1.0 Ohm

IS66WVD2M16ALL

Abstract: CellularRAM 66WVD2M16ALL
Contextual Info: IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

tepro type s

Contextual Info: Sx TEPRO TYPE M TKWH/ "TKF" E L E C T R O T E C H N IK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS Standard tem perature coefficients: ±90 PPM / °C Below 1.0 Ohm +50 PPM / °C 1.0 Ohm - 9.9 Ohm ±20 PPM / °C 10 Ohm and beyond Electrical: Power . 1 2 5 - 3 watts

Contextual Info: IS66WVD2M16ALL Preliminary Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

Contextual Info: IS66WVD204816ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD204816ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

IS66WVD1M16ALL

Abstract: CellularRAM 66WVD1M16ALL IS66WVD1M16ALL-7010BLI
Contextual Info: IS66WVD1M16ALL Advanced Information 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a

Contextual Info: IS66WVD2M16ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

IS66WVD1M16ALL

Abstract: 66WVD1M16ALL
Contextual Info: IS66WVD1M16ALL 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

Contextual Info: RECEIV ED MAR 81991 DOCUMENTS CONTROL NOTES: 1. DISSIPATION FACTOR: .005 MAX @ 25* C, 1 KHZ. 2. CAPACITANCE: 45 NF - 5 5 NF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 7 KV WORKING, 10.5 KV PROCESS FOR 2 HOURS @ 100* C AND 14 KV FOR 5 SECS. 4. RAW SECTION, NO TAPE OVERWRAP.

Contextual Info: Surface Mounting Device Rectifier Diode Shingle Diode OUTLINE DIMENSIONS D2FD 600V 1-4A • S S J P Ig S fS •* « . O A . RSŒ •a«, m • Æ fë ü fa RATINGS Absolute Maximum Ratings m h Item m a su s. Storage Temperature Operating Junction Temperature

0p07

Abstract: lt1001 AD707 AD707J
Contextual Info: 12 - - AD707 infifllE. {fet " / hW ANALOG DEVICES ± • m m m 1$ • & A £ fg • V — x IB U / ±22 ±22 V Ta=25°C x j i m m ± Vs ± Vs V m A llW Z ±Vs ± Vs V J:0—+70, A -40—+85 K:(K+70,B; -40—*85 °c 500 500 mW A & m LT:LT1001 AD:0P-07 VofTWJZLWY

Contextual Info: REV. — i DESCRIPTION RELEASE DATE Jun. 29, 2000 2 MATERIALS 1. HOUSING : P.B.T. OR HI.-TEMP. PLASTIC UL 9 4 V -0 , BLACK. 2. TERMINAL : PHOSPHOR BRONZE, GOLD PLATING ON CONTACT AREA. TIN PLATING ON SOLDER TAIL. 3. SHIELD : BRASS, TIN PLATING. (t=0.30m m )

Contextual Info: DAT REV ECN A P P U ÍY 9 -2 6 -W AD - - M 6 [ l « . 4 0 ] - » P \m .5 0 0 [ 1 2 . 7 0 ] - PN 1 .213 [ 5 t a ] M ATERIAL: H0U9NG NYLON U L 9 4 V -0 , STANDARD COLOR: BLACK INSERT: P B H -Ü K B J . UL94V-D. STANDARD COLOR: H-AGK BACK NVIÜN. STANDARD MLOR: BLACK

l 9113

Abstract: L69S
Contextual Info: «iLrl IU 3UML.C €=-| ft0 5 ] B I •17.55 • S E E ilE lM G -3.32 * - 3 ,1 0 t0j0 5 -« H f t 1 M l * t ) Ì j f ì '* w i f i f t .’ f t . Y 5= -15* TYP- -*» K - 0 .5 0 ±0.05 DIM 'X1 2.00 4.00 6.00 S00 50.00 I2 £ 0 14.00 16.00 18.00 24.00 3200 -5