TKW 4 Search Results

Contextual Info: TEPRO TYPE "TKW" / "TKF" ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ± 2 ppm / °C Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: ENVIRONMENTAL PERFORMANCE: Standard temperature coefficients:

Contextual Info: a su s /'vy^r— LW822-007 T V SMD Top View Package ft o a FE A T U R E S « B High Brightness Small SMD Package m & A PPLIC A T IO N S tkW B Ä Indicators Amusement mm Lighting nm illuminations I S ñ I f f l PRODUCT SUM M ARY Emitted Color D n m Features

IS66WVD4M16ALL

Abstract: CellularRAM 66WVD4M16ALL
Contextual Info: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

Contextual Info: IS66WVD4M16ALL Advanced Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

Contextual Info: IS66WVD4M16ALL Preliminary Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a

IS66WVD2M16ALL

Abstract: CellularRAM 66WVD2M16ALL
Contextual Info: IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

tepro type s

Contextual Info: Sx TEPRO TYPE M TKWH/ "TKF" E L E C T R O T E C H N IK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS Standard tem perature coefficients: ±90 PPM / °C Below 1.0 Ohm +50 PPM / °C 1.0 Ohm - 9.9 Ohm ±20 PPM / °C 10 Ohm and beyond Electrical: Power . 1 2 5 - 3 watts

Contextual Info: IS66WVD2M16ALL Preliminary Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

IS66WVD2M16DALL

Abstract: CellularRAM 66WVD2M16DALL
Contextual Info: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

IS66WVD1M16ALL

Abstract: CellularRAM 66WVD1M16ALL IS66WVD1M16ALL-7010BLI
Contextual Info: IS66WVD1M16ALL Advanced Information 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a

Contextual Info: IS66WVD2M16ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a

Contextual Info: Surface Mounting Device Rectifier Diode Shingle Diode OUTLINE DIMENSIONS D2FD 600V 1-4A • S S J P Ig S fS •* « . O A . RSŒ •a«, m • Æ fë ü fa RATINGS Absolute Maximum Ratings m h Item m a su s. Storage Temperature Operating Junction Temperature

0p07

Abstract: lt1001 AD707 AD707J
Contextual Info: 12 - - AD707 infifllE. {fet " / hW ANALOG DEVICES ± • m m m 1$ • & A £ fg • V — x IB U / ±22 ±22 V Ta=25°C x j i m m ± Vs ± Vs V m A llW Z ±Vs ± Vs V J:0—+70, A -40—+85 K:(K+70,B; -40—*85 °c 500 500 mW A & m LT:LT1001 AD:0P-07 VofTWJZLWY

Contextual Info: DAT REV ECN A P P U ÍY 9 -2 6 -W AD - - M 6 [ l « . 4 0 ] - » P \m .5 0 0 [ 1 2 . 7 0 ] - PN 1 .213 [ 5 t a ] M ATERIAL: H0U9NG NYLON U L 9 4 V -0 , STANDARD COLOR: BLACK INSERT: P B H -Ü K B J . UL94V-D. STANDARD COLOR: H-AGK BACK NVIÜN. STANDARD MLOR: BLACK

hco8

Contextual Info: PRODUCT NUMBER SEE TABLE EQUILATERAL triangle ROUND GR SOUARE SEE TAB L E . 015 38 SPHER. R TYP SECTION X -X SECTION Y - Y REVISIONS ECN/DDR# DATE SHEET INDEX E L E C T R O N I C S 8 /1 0 /9 0 1/30/91 5/9/91 EC V I 0 9 7 6 EC V 4 1 1 *8 6 V41733 NOtt. TH¿ ÚOCUM¿wt IS twE PBQPtRTY Of MC EM800CS PWQPSIfHRY INfQBWTIQM Qf BÇBÇ ELECTRONICS. INC.

MP3002

Contextual Info: SILICON NPN EPITAXIAL TY PE DARLINGTON POWER TRANSISTOR 3 IN 1 MP3002 INDUSTRIAL APPLICATIONS Unit in iron o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIP 8 Pin)

RD9.1EW

Abstract: RD8.2EW DIODE RD9.1 RD9.1 zener rd9.1esb2 1ew 80 NEC bidirectional zener diodes Zener diode itt 150
Contextual Info: M ÿ j f à 'Ë W ï ï . ÿ - C K Bidirectional Zener Diodes R 8 D 2 . E W , R D 9 . 1 E W 400 mW R D 8 .2 E W , R D 9 .1 E W i3 :!t# Îi* 4 0 0 — ;W D H D D o u b le F T ', A i 2 .4 mm 5 m m h ° -y « H e a ts in k f a W « 7 v - r t ^ '7 X y D io d e # jê < T )? X 7 j

Contextual Info: SK 80 DTA FBGJ FBBJK F<BJ M< N OC P F REE CTEE F OEE CUEE ;I- N OE Q$> GS OE <IP EO GS OE <IP CU CVEE CDEE GS OE <IP CD Characteristics Symbol Conditions SEMITOP 3 3-phase bridge rectifier+ series thyristor M< IG N OEQ$X M0+Y 7% + MIPF -.0Y COEQX I- N UW ;OE> Q$ ',2 *8A2.-*%2

MPSD05

Abstract: mpsd55 MPS-D05 MPS-D55 IC 13700
Contextual Info: MPS-D05 NPN MPS-D55 PNP SILICON COMPLEM ENTARY SILICON A NN U LA R TRANSISTORS COMPLEMENTARY SILICON TRANSISTORS . . . designed for use in general purpose amplifier applications. • Excellent LED Digit Driver • DC Current Gain Specified - 50 mAdc to 500 mAdc

TS256M

Abstract: Transcend HD10 HD11 HD15
Contextual Info: TTrraannsscceenndd 4444-P Piinn IID DE E FFllaasshh M Moodduullee TTS S112288M M ~~ 44G GD DO OM M4444V V-S S Description Features With an IDE interface and strong data retention ability, • RoHS compliant products 44-Pin IDE Flash Modules are ideal for use in the

IR LFN

Abstract: TK71245M 245m
Contextual Info: * o i t o öohu m Ä f t « * f t m ^ m ^ i ± í f t t o ü >k l 1 . j§ a 2 . nn ffl 3. & fg 4. Ä m £ ffl & 5. « ja 6. 7. * * 8. * fe 9 . j TE ID » > SB tt n n -y ? 0. kf 1. r 1 2. 5e » tt W m m v fc m R v u w 1 3. m - 't m . 1 4. ^ 1 5. a H m m »

wmm p8

Abstract: t930 AH20 ESAC92M-02
Contextual Info: E S A C 9 2 M - 2 i o a : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features • fo m en t-? insulated package by fully molding. Low V]. wc Connection Diagram Super high speed switching. High reliability by planer design, • : Applications

p1aa

Contextual Info: INTEGRATED DEVICE 3ÔE D • 4A2S771 0007174 Ô ■ IDT _ "T- Hfc-2.2-11 2 X 4K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 MULTIPROCESSOR _ PRELIM INARY IDT7MB6064 FEATURES: DESCRIPTION: • High-speed CEMOS static RAM module constructed

Contextual Info: 2SC4275 '& ± '< T7 - Y ? > i> X 9 N P N = M Ì£ ÌS [ 7 V — + Jf2 TRIPLE D IFFUSED PLANER TYPE *W E . * * * < < * • > * * HIGH VOLTAGE. HIGH SPEED SWITCHING : O utline Draw ings 2.0 Features • ffl High speed sw itching Low saturation voltage • S t !H it