TK65E10N1 Search Results
TK65E10N1 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TK65E10N1 | Toshiba | Japanese - Transistors - Mosfets | Original | 354.88KB | 9 | ||
| TK65E10N1 | Toshiba | Transistors - Mosfets | Original | 250.68KB | 9 | ||
| TK65E10N1 | Toshiba | TK65E10N1 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | 250.6KB | 9 | ||
| TK65E10N1,S1X | Toshiba | TK65E10N1 - LV-MOS_100V_4.8MOHM MAX(VGS=10V)_TO-220 | Original | 250.6KB | 9 |
TK65E10N1 Price and Stock
Toshiba America Electronic Components TK65E10N1,S1X(STransistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK65E10N1,S1X(S | 431 | 1 |
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TK65E10N1,S1X(S | Bulk | 477 | 1 |
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TK65E10N1,S1X(S | 1,750 | 19 Weeks | 50 |
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Toshiba America Electronic Components TK65E10N1,S1XTrans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK65E10N1,S1X | 34 | 6 |
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TK65E10N1,S1X | Tube | 24 Weeks | 50 |
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TK65E10N1,S1X | 375 |
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TK65E10N1,S1X | 34 | 1 |
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TK65E10N1,S1X | Tube | 50 |
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Buy Now | ||||||
TK65E10N1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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tk65e10n1o-220 | |
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Contextual Info: TK65E10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK65E10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 4.0 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V) |
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tk65e10n1o-220 | |
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Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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tk65e10n1o-220 | |
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Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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tk65e10n1o-220 | |
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Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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tk65e10n1o-220 | |
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Contextual Info: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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tk65e10n1o-220 | |
fast tlp785
Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
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sce0024ffast tlp785tk10a60d5252 f solar+2 | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6 | |
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
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tk12a10k3tk12a10ktk33a60vtpca*8065+6 | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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sce0024ggt50jr22fast tlp785toshiba bipolar power transistor+5 |