TK40E06N1 Search Results
TK40E06N1 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TK40E06N1 | Toshiba | TK40E06N1 - Nch 30V |
Original | 252.08KB | 9 | ||
| TK40E06N1 | Toshiba | Transistors - Mosfets | Original | 251.94KB | 9 | ||
| TK40E06N1 | Toshiba | Japanese - Transistors - Mosfets | Original | 351.18KB | 9 | ||
| TK40E06N1,S1X | Toshiba | TK40E06N1 - UMOSVIII_60V_10.4MOHM MAX(VGS=10V)_TO-220 | Original | 252.08KB | 9 |
TK40E06N1 Price and Stock
Toshiba America Electronic Components TK40E06N1,S1X(STrans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK40E06N1,S1X(S | 15 | 5 |
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TK40E06N1,S1X(S | 15 | 1 |
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TK40E06N1,S1X(S | Bulk | 1,366 | 1 |
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TK40E06N1,S1X(S | 1 |
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TK40E06N1,S1X(S | 1,800 | 19 Weeks | 50 |
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Toshiba America Electronic Components TK40E06N1,S1X- Rail/Tube (Alt: TK40E06N1,S1X) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK40E06N1,S1X | Tube | 24 Weeks | 50 |
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Toshiba America Electronic Components TK40E06N1S1XSMOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK40E06N1S1XS | 1,500 |
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Toshiba America Electronic Components TK40E06N1S1XMOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK40E06N1S1X | 250 |
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Toshiba America Electronic Components TK40E06N1Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK40E06N1 | 478 |
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TK40E06N1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TK40E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) |
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tk40e06n1o-220 | |
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Contextual Info: TK40E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) |
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tk40e06n1o-220 | |
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Contextual Info: TK40E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) |
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tk40e06n1o-220 | |
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Contextual Info: TK40E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) |
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tk40e06n1o-220 | |
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Contextual Info: TK40E06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40E06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 8.4 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V) |
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tk40e06n1o-220 | |
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Contextual Info: TK40E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) |
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tk40e06n1o-220 | |
fast tlp785
Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
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sce0024ffast tlp785tk10a60d5252 f solar+2 | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6 | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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sce0024ggt50jr22fast tlp785toshiba bipolar power transistor+5 |