Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    TK35E08N1 Search Results

    TK35E08N1 Datasheets (4)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK35E08N1
    		Toshiba TK35E08 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 250.43KB 9
    TK35E08N1
    		Toshiba Japanese - Transistors - Mosfets Original PDF 353.36KB 9
    TK35E08N1
    		Toshiba Transistors - Mosfets Original PDF 250.36KB 9
    TK35E08N1,S1X
    		Toshiba TK35E08N1 - UMOSVIII_80V_12.2MOHM MAX(VGS=10V)_TO-220 Original PDF 250.43KB 9
    SF Impression Pixel

    TK35E08N1 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK35E08N1,S1X

    - Rail/Tube (Alt: TK35E08N1,S1X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK35E08N1,S1X Tube 24 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics TK35E08N1,S1X 312
    • 1 $2.11
    • 10 $1.35
    • 100 $1.34
    • 1000 $0.77
    • 10000 $0.62
    		Buy Now

    Toshiba America Electronic Components TK35E08N1,S1X(S

    Mosfet, N-Ch, 80V, 55A, To-220; |Toshiba TK35E08N1,S1X(S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK35E08N1,S1X(S Bulk 984 1
    • 1 $1.17
    • 10 $1.03
    • 100 $0.83
    • 1000 $0.68
    • 10000 $0.56
    		Buy Now
    TME TK35E08N1,S1X(S 1
    • 1 $1.02
    • 10 $0.73
    • 100 $0.66
    • 1000 $0.61
    • 10000 $0.61
    		Get Quote
    Avnet Asia TK35E08N1,S1X(S 28 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik TK35E08N1,S1X(S 19 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components TK35E08N1SXS

    MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TK35E08N1SXS 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TK35E08N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    Contextual Info: TK35E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK35E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 10.0 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    Contextual Info: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		tk35e08n1o-220 PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		sce0024ffast tlp785tk10a60d5252 f solar+2tcv7116tph1400anh PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6tpca8047-htpc 8127tpc8123 cross referencessm3j328rssm3j334rtpc8120 PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		sce0024ggt50jr22fast tlp785toshiba bipolar power transistor+5tk10a65dtlp152tlp293tph1400anhtk8p65w PDF