TJM SOT23 Search Results

mosfet marking code N9

Abstract: Si2309CDS Si2309CDS-T1-E3
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Contextual Info: u fm _ LT1027 TECHNOLOGY P recision 5V R e fe re n c e FCnTURCS D C S C R IP T IO n • Very Low Drift: 2ppm/°C MaxTC ■ Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only ■ Output Sources 15mA, Sinks 10mA ■ Excellent Transient Response Suitable for

S1217

Abstract: TO-92-18RM
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

A5SHB

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)

Si2306DS

Contextual Info: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2315DS

Abstract: Si2315DS-T1
Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View

A96V

Abstract: Si2326DS
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

sss02

Abstract: tjm sot23
Contextual Info: SSS0201 N-Channel Enhancement Mode MOSFET Product Summary RDS ON (Ω) Max ID (A) D 01 02 VDS (V) SOT-23 YW 1.3 @VGS =10V 0.5A 20V G 1.6 @VGS = 4.5V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). G ȟ!Rugged and reliable. ȟ!SOT-23 package.

SPF10

Contextual Info: SSS2202 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 200 @VGS = 4.5V 20V 1.4A G 300 @VGS = 2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

8205 sot-23-6

Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
Contextual Info: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.

MOSFET N SOT-23

Contextual Info: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.

MOSFET N SOT-23

Abstract: DS1060
Contextual Info: SSS2N7002E N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 02 3.0 @VGS = 10V 0.25A 60V 70 VDS (V) SOT-23 G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free.

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET KI2303DS SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = -30V 1 ● RDS(ON) < 380mΩ (VGS = -4.5V) 0.55 ● RDS(ON) < 200mΩ (VGS = -10V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -1.4 A 0.4

A96V

Abstract: Si2328DS SI2328ds rev
Contextual Info: Si2328DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

C2 marking code

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

diode MARKING CODE A9

Abstract: Si2309DS
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.340 @ VGS = –10 V –1.25 0.550 @ VGS = –4.5 V –1 –60 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2320DS

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.

Contextual Info: MOTOROLA Order this document by BFR92ALT1/D SEMICONDUCTOR TECHNICAL DATA T h e RF Line NPN Silicon High-Frequency Transistors BFR92ALT1 Designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface

A7 MARKING CODE

Abstract: Si2307DS A7 marking
Contextual Info: Si2307DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V –3 0.140 @ VGS = –4.5 V –2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED)

Contextual Info: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)