TIP110 EQUIVALENT Search Results

TIP110 equivalent

Abstract: TIP111
Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4v, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use 1

TIP110 equivalent

Abstract: TIP110 TIP111 TIP112 tip 112
Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

TIP110 equivalent

Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

tip117 TRANSISTOR equivalent

Contextual Info: TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112

Transistor Equivalent list tip 117

Abstract: tip117 TRANSISTOR equivalent TIP115 TIP116 TIP117
Contextual Info: TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112

TIP 152 transistor

Contextual Info: TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

TIP110

Abstract: TIP112 TIP111 TIP110 equivalent TIP110 transistor TIP112 transistor NPN Transistor VCEO 80V 100V TIP NPN 112 transistor tip110 transistor tip111
Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode

ce 1588

Abstract: TIP117 TIP116 TIP115
Contextual Info: MCC TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Epitaxial Silicon Darlington Transistors High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A Min.

TIP117

Abstract: TIP110 equivalent TIP-115 TIP115
Contextual Info: MCC TIP115 TIP116 TIP117
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Epitaxial Silicon Darlington Transistors High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A Min.

TIP115

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Epitaxial Silicon Darlington Transistors High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A Min.

TIP115

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : h • • • • FE=1000 @ VCE=4.0V, IC=1.0A Min.

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : h • • • • • FE=1000 @ VCE=4.0V, IC=1.0A Min.

BU108

Abstract: C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • • • TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : h • • • • • • FE=1000 @ VCE=4.0V, IC=1.0A Min.

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

tip117 TRANSISTOR equivalent

Abstract: TIP117 TIP115 TIP116 Transistor Equivalent list tip 117 TRANSISTOR TIP117
Contextual Info: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use

tip117

Abstract: TIP116
Contextual Info: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use

MOC3021 APPLICATION CIRCUITS

Abstract: MOC3021 equivalent transistor tip 32C fan regulator using triac fpm 250 airflow equivalent transistor 2N1711 MOC3021 TRIAC heater temperature control AD8402 IRGBC40S
Contextual Info: a FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale Factor Resistor Programmable Temperature Setpoints 20 mA Open-Collector Setpoint Outputs

equivalent transistor 2N1711

Abstract: MOC3021 application MOC3021 2N1711 AD8402 IN4001 IRGBC40S OP113 OP193 OP284
Contextual Info: a FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale-Factor Resistor Programmable Temperature Setpoints 20 mA Open-Collector Setpoint Outputs

MOC3021 application

Contextual Info: a FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale Factor Resistor Programmable Temperature Setpoints 20 mA Open-Collector Setpoint Outputs

MOC3021 and applications

Abstract: MOC3021 equivalent p-channel mosfet BL SOIC-8 coto relays
Contextual Info: a Airflow and Temperature Sensor TMP12 FUNCTIONAL BLOCK DIAGRAM FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale Factor Resistor Programmable Temperature Setpoints