TIP 3055 TRANSISTOR Search Results

TIP 2n3055

Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc

C2688

Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Contextual Info: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature

2n3055

Abstract: bd 3055
Contextual Info: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B

3055t

Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Contextual Info: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

TIP 41 transistor

Abstract: B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT
Contextual Info: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED M E S A SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C • 125 W at 25°C Case Temperature •

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

tip 222 TRANSISTOR

Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120
Contextual Info: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating

T1P147

Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
Contextual Info: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Contextual Info: MC10EP51, MC100EP51 3.3V / 5V ECL D Flip-Flop with Reset and Differential Clock Description The MC10/100EP51 is a differential clock D flip−flop with reset. The device is functionally equivalent to the EL51 and LVEL51 devices. The reset input is an asynchronous, level triggered signal. Data

tip 3055

Abstract: TSSOP-8
Contextual Info: MC10EP51, MC100EP51 3.3V / 5V ECL D Flip-Flop with Reset and Differential Clock Description The MC10/100EP51 is a differential clock D flip−flop with reset. The device is functionally equivalent to the EL51 and LVEL51 devices. The reset input is an asynchronous, level triggered signal. Data

kep08

Abstract: tip 3055
Contextual Info: MC10EP08, MC100EP08 3.3V / 5V ECL 2-Input Differential XOR/XNOR Description The MC10/100EP08 is a differential XOR/XNOR gate. The EP08 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation.

hep51

Abstract: TIP 3055 JAPAN transistor tip 3055
Contextual Info: MC10EP51, MC100EP51 3.3V / 5V ECL D Flip-Flop with Reset and Differential Clock Description The MC10/100EP51 is a differential clock D flip−flop with reset. The device is functionally equivalent to the EL51 and LVEL51 devices. The reset input is an asynchronous, level triggered signal. Data

tip 3055

Contextual Info: MC10EP51, MC100EP51 3.3V / 5V ECL D Flip-Flop with Reset and Differential Clock Description The MC10/100EP51 is a differential clock D flip−flop with reset. The device is functionally equivalent to the EL51 and LVEL51 devices. The reset input is an asynchronous, level triggered signal. Data

TIP 29 transistor

Abstract: BD239 TEXAS INSTRUMENTS B0239 transistor BD 140 transistor tip 3055 TIP 32 transistor tip 30 tip 226 Tip 3054 transistor TIP 32
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

3055 5C pnp transistor

Abstract: TIP 35 transistor BD243 transistor BD 246 transistor bd 242 8D243C transistor tip 3055 BD 245 TIP 29 transistor BD243A
Contextual Info: BD243, BD243A, BD243B, BD243C FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD244A-C 65 W at 25 °C Case Temperature 6 A Rated Collector Current Min f j of 3 MHz at 10 V , 500 mA mechanical data TO-66P All dimensions are in mm

tip 420 transistor

Abstract: BD245C TEXAS INSTRUMENTS transistor tip 420 transistor BD245 BD245 transistor BD 246 BD245C transistor tip 3055 tip 420 transistor bd 202
Contextual Info: BD245, BD245A, BD245B, BD245C FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD246A-C 80 W at 25 ° C Case Temperature 10 A Rated Collector Current M in fT of 3 M H z at 10 V , 50 0 mA