TIME120N Search Results

Contextual Info: 388M Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388H Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388C Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387K Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387M Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387D Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388K Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 388B Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: HFA200MD40C Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current172 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)100 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)200

Contextual Info: 388D Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387H Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: 387B Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time120n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.0

Contextual Info: m D 2,4,8 Megabyte • Flash { ELECTRONIC d esig n s . n c I 512Kx32 Flash Module Features 2,4,8 megabyte CMOS Flash Module Family The EDI Flash Family is a five-volt-only in system Flash program­ Organization: mable and eraseable read only memory module. The modules are

4k51

Abstract: Flash SIMM 80 programmer
Contextual Info: ^ED I 2 ,4,8 EiCTDONIC DESIGN M egabyte FISSAI 512Kx32 Flash Module Features The EDI Flash Family is a five-volt-only in system Flash program­ 2,4,8 megabyte CMOS Flash Module Family Organization: mable and eraseable read only memory module. The modules are

ATMEL AT27c512

Contextual Info: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP

Contextual Info: AT29C257 Features • • • Fast Read Access Time-120ns Five Volt Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program internal Address and Data Latches for 64 Bytes • Fast Program Cycle Times Page (64 Byte) Program Time • 10ms

Contextual Info: 2N3744 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BD744C Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)15 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ^ED I 2,4,8 Megabyte FISSAI EiCTDONIC DESIGN 512Kx32 Flash Module Features The ED I Flash Family is a five-volt-only in system Flash program­ 2,4,8 megabyte CM O S Flash Module Family Organization: mable and eraseable read only memory module. The modules are

ATMEL AT27c512

Abstract: AT27C512 ATMEL AT27c512 PLCC at27c512-15di AT27C512-15J 27C512 T-25 27C512* PLCC AT27C512-20DM AT27C512-15
Contextual Info: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP