TIC 262 Search Results

Raytheon Company

Abstract: cathode ray CK1359P radar tube cathode ray tube resolution
Contextual Info: Tech.nical Infox*rn.a,tion TECHNICAL INFORMATION SERVICE CK1359P-A CATHODE RAY TUBE MECHANICAL DATA The type CK1359P—A is a 16—inch e le ctro sta tic focus and magnetic deflection, cathode—ray tube suitable for radar applications. A low—voltage e le ctro sta tic focus lens is employed, designed to

Signetics 2513

Abstract: 2513N 7x5 dot matrix 7x5 dot matrix display cm2141 signetics 2513n R03-2513 -CGR-001 64X7X5 2513NX crt 08 3m
Contextual Info: s ig n o tic s 64X8X5CHARACTER GENERATOR 2513 SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top V ie w T h e Signetics 2 5 1 3 is a high speed 25 60-b it Sta tic ROM N /l P A C K A G E organized as 6 4 x 8 x 5 . A standard 7 x 5 dot m a trix fits w ell in

MBM2256

Contextual Info: MOTOROLA MBM2256 Advance Information G E N E R A L D E S C R IP T IO N 256 K x 1-BIT MAGNETIC BUBBLE MEMORY DEVICE The M B M 2256 is a 262,144 2 ^ 1 b it m a gn e tic b u b b le m e m o ry device. A ll re q u ire d m a g n e tic co m p o n e n ts in clu d in g the p e rm a ­

MBM2256

Abstract: MIL883B 3 DG 1008 me 218l MIL-883 bubble memory
Contextual Info: g MBM2256 MOTOROLA A d v a n c e Inform ation 256 K x 1-BIT MAGNETIC BUBBLE MEMORY DEVICE G E N E R A L D E S C R IP T IO N The M B M 2256 is a 262,144 (218l b it m a gn e tic b u b b le m e m o ry device. A ll re qu ire d m a g n e tic co m p o n e n ts in c lu d in g the p e rm a ­

tube 6x8

Abstract: bose B6-63 radar tube cathode ray Scans-0017255
Contextual Info: SaYTHEOn^ TECHNI CAL I N F O R M A T I O N CATHODE RAY TUBE TYPE £J- jLLie-n—<L-e- 10UP7A 10U P Î4A The type 10U P— is a 10 inch alum inized e le ctro sta tic focus and magnetic d e flection cathode — ray tube suitable for radar applica tio ns. A lo w -v o lta g e e le ctro sta tic focus lens is employed, d e ­

PD16312

Contextual Info: ALPHA NUMERICAL INDEX ALPHA NUM ERICAL INDEX Typ e num ber F un ctio n Page /iPD 6320 F IP / LC D S ta tic D is p la y D riv e r 201 //PD6321 F IP / LC D S ta tic D is p la y D riv e r 201 ü PD 6323 Latch and D riv e r fo r F IP 215 ¿¿PD6323B L atch and D riv e r fo r F IP

79Q031

Contextual Info: PH F:LiîvllNAR S Am79Q02/021/031 AMD£I Quad Subscriber Line Audio-Processing Circuit QSLAC Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s . 2 - 5 3

Scans-0017262

Abstract: B6-63 Raytheon Company radar tube cathode ray cathode ray tube resolution 12ABP7A
Contextual Info: TECHNICAL IN FO RM ATIO N CATHODE RAY TUBE TYPE 5LL jsJ -L .e -S L . T h e ty p e 1 2 A B P — is a 12 — inch e le c tro s ta tic focu s and m agnetic d e fle c tio n cathode —ray tube s u ita b le for radar a p p lic a tio n s * A l o w —v o lta g e e le c tro s ta tic focu s lens is em ployed, desig ned to

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32 K x 8 a d v a n c e d h igh -spe ed C M O S sta tic R A M • Equal a c c e s s and cycle tim e s — M ilitary: 15 /20/2 5ns T h e ID 71 256S A is a 2 6 2 ,1 4 4 -b it h ig h -sp e e d S ta tic RAM

5AHP14

Abstract: 5AHP19A radar tube cathode ray CATHODE RAY TUBE
Contextual Info: TECHNICAL IN FO R M A T IO N RAYTHEON CATHODE RAY TUBE -c-e.J-Le. The ty p e 5 A H P — TYPE £JL is a 5 in c h e le c tro s ta tic focu s and m a gnetic d e fle c tio n cathode ray tube s u ita b le fo r radar a p p lic a tio n s . A low —v o lta g e e le c tro s ta tic fo cu s lens is em ployed, designed

Contextual Info: DESCRIPTION: HIGH DENSITY - MACHINED CONTACTS -VER TIC AL MATERIALS AND FINISH: SHELL: INSULATOR: CONTACT MATERIAL: CONTACT FINISH: C ± 0.01 5 ELECTRICAL: 156 B ± 0.010 CONTACT CURRENT RATING: CONTACT RESISTANCE: DIELECTRIC WITHSTANDING VOLTAGE: INSULATION RESISTANCE:

6207p

Abstract: MCM6207-25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6207 Product Preview 2 5 6 K x 1 Bit S ta tic Random Access M e m o ry The MCM6207 is a 262,144 bit static random access memory organized as 262,144 words of 1 bit, fabricated using Motorola's third-generation high-perfor­

Contextual Info: MOSEL- VITEUC MS62256N 32K x 8 CMOS STA TIC RAM WITH 3.3V OPERATIONS Features Description • High-speed - 70/100 ns ■ Low Power dissipation: MS62256NL - 200mW Max. Operating - 150p.W (Typ.) Power Down ■ Fully static operation ■ Three state outputs

Contextual Info: MITSUBISHI LSIs •0 0 ^ M5M5V278DP,J,FP,VP-15 1994.02 Note*: This It not • firmi tpftddcaUon. loa^Bg» 262144-BIT 32768-WORD BY 8-BIT CMOS STA TIC RAM DESCRIPTION The M5M5V278D is a family of32768-word by 8-hit static RAMs, fabricated with the high-performance CMOS silicon gate MOS

mcm-6208

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6208 Product Preview 6 4 K x 4 Bit S ta tic Random A ccess M e m o ry The MCM6208 is a 262,144 bit static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola's third-generation high-performance silicon-gate CMOS IHCMOS IV technology. Static design eliminates the

MCM60L256AP10

Abstract: MCM60256AP12 MCM60L256AP85 MCM60256A MCM60256A-85 MCM60L256AP12 MCM60258AP10 MCM60L256AF10 MCM60256AF85 MCM60256AP
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM60256A MCM60L256A Advance Information 3 2 K x 8 Bit C M O S S ta tic Random A c c e ss M em ory The MCM60256A is a 262,144 bit low-power static random access memory organized as 32,768 words of 8 bits, fabricated using silicon-gate CMOS technology. Static design

ic 3254

Abstract: D46258
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD46258,46259L 256K-BIT BiCMOS FAST STATIC RAM 32K-WORD BY 8-BIT/32K-WORD BY 9-BIT Description The /JPD46258 is 262,144 b its 32,768 w o rd s by 8 bits and the /iPD46259L is 294,912 b its (32,768 w o rd s by 9 b its) BiCMOS sta tic RAMs.

NM43256A

Abstract: NM43256AM-10L
Contextual Info: June 1990 NM43256A 262 144-Bit CMOS Static RAM General Description Features Th e N M 43256A is a high speed, low pow er, 32768 w ords by 8 bits C M O S sta tic RAM fa bricated w ith advanced silico n ­ gate C M O S technology. The N M 43256A is a low standby

tube 6x8

Abstract: 10WP14 10WP19 10WP7 Raytheon Company radar tube cathode ray
Contextual Info: TECHNICAL IN FO R M A T IO N |m \ p r> r £l o _ Th e ty p e 10WP — is a 1 0 -in c h e le c tro s ta tic focus and m a gnetic d e fle c tio n c a th o d e -ra y tube s u i t ­ CATHODE RAY TUBE TYPE 10W P7 10W P 14 10W P 19 a b le fo r radar a p p lic a tio n s . A lo w -v o lta g e e le c tro s ta tic focu s lens is em ployed, designed to operate

KM44C2568P

Abstract: KM44C256BJ tantalum Capacitor A8 Jh KM44C256BZ KM44C256B-10 KM44C256B KM44C256B-7 KM44C256B-8 SS5C F47F
Contextual Info: CMOS DRAM KM44C256B 256K x 4 B it CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C256B-7 KM44C256B-8 KM44C256B-10 <KAC tcAC tic 70ns 80ns 100ns 20ns 20ns 25ns 130ns 150ns 180ns The Samsung KM44C2S6B is a CMOS high speed

Contextual Info: 6 5 ,5 36 W O R D x 4 BIT CM O S STA TIC RAM D ESCRIPTIO N The TC55465P/J is a 262,144 bits high speed static random access memory organized as 65,536 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS technology and advanced circuit form provide high speed feature.

Contextual Info: KM62256BUKM62256BL-L CMOS SRAM 32,768 W OR D X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a s t A c c e s s T im e : 70, 85, 100, 120ns M ax. The KM 62256BL/BL-L is a 262,144-bit high-speed S ta tic Random A cce ss M em ory organized as 32,768

AI523

Contextual Info: = ^ CY7C197 ¿m CYPRESS —. • — 262,144 x 1 Static R /W RAM SEMICONDUCTOR Features Functional Description • A u to m a tic pow er-dow n w hen d esele cted T h e CY7C197 is a high-perform ance C M O S static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is

Contextual Info: IW' VFTELIC V53C106A FAMILY HIGH PERFORMANCE, LOW POWER 256K x 4 BIT, STA TIC COLUMN MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C106A ADVANCED 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns