0814R Search Results

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

KM62256BLG

Abstract: KM62256BLP KM62256BL-10 KM62256BL-L
Contextual Info: CMOS SRAM KM62256BÜKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): lO^W (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW (Typ.)

Contextual Info: KM62256BUKM62256BL-L CMOS SRAM 32,768 W OR D X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a s t A c c e s s T im e : 70, 85, 100, 120ns M ax. The KM 62256BL/BL-L is a 262,144-bit high-speed S ta tic Random A cce ss M em ory organized as 32,768

Contextual Info: S A M S UN G E L E C T R O N I C S INC b?E D • 7ib4mB KM62256BL/KM62256BL-L G D 1 7 4Ô S G^l « S M G K CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation

KM62256BLP-V

Abstract: KM62256BLS-V KM62256B KM62256BLG
Contextual Info: KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: '120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4fxW/1.2mW (Typ.)