TIC 2350 Search Results

S16HNS/HRS240

Abstract: SA12HN/HR55
Contextual Info: less h s u r B ator Altern r o t Ro es d o i D built mo t s u C Design Hind Rectifiers Limited Hydro tic a m o t Au ion t a l u g e Re ystem g a t l o S V AVR s nt a l P n io t a r e n ge ri ect l E r e Pow h of Hig ne i h c a cal M itat ss Exc le Brush

Contextual Info: CD 286 GK Series 2000h a t 105°C L o w Im p e d a n c e S u ite d fo r s w itc h in g p o w e r s u p p lie s H ig h rip p le c u r r e n t c a p a b ilit y 85t CD 110PT CD 286 GK lo n g e r life CD 287 GC Ite m C h a ra c te ris tic s O p e ra tin g T e m p e ra tu re R a n g e °C

hp 5082 2817

Abstract: hp 2817 5082-2295 hp 5082 2711 5082-2565 2.2 GHz local oscillator 5082-2500 5082-2711 5082-2817 5082
Contextual Info: COMPONENTS 5082 - 2 2 7 3 /7 4 5082 - 2285 - 88 / 9 5 -9 8 5082 2350/51 5082 - 2400/01 5082 - 2520 / 21/ 6 5 /6 6 5082 - 2701/ 0 2 / 0 6 /0 7 5082 - 2711- 14/ 21-24 5082 2817/18 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T ^ PACKARD SCHOTTKY

TIC 160

Abstract: thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC64 TIC 160 D TIC45 AGK TIC106B Thyristor TO39
Contextual Info: TYPES 2N5060 THRU 2N5064, TIC60 THRU TIC64 P-IIM-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS S IL E C T t T H Y R IS T O R S * 8 0 0 m A DC • 30 thru 20 0 V O LT S mechanical data These thyristors are encapsulated in a plastic compound specifically designed for this purpose, using a highly

5082-2565

Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Contextual Info: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS

ULN pnp

Abstract: pnp transistor array uln ULN pnp array 2350C NPN TRANSISTORS LIST vertical PNP ULN-2350C ULN-2351C sprague transistors 104 RESISTOR CHIP
Contextual Info: U LN -23 50 C A N D U LN -2 3 5 1C ULN-2350C A N D ULN-2351C TUFF CHIP SEMI-CUSTOM INTEGRATED CIRCUITS FEATURES B V CI 80 V M in . 25 0 m A O u tp u ts HU H ig h -G a in P N P T ra n s is to rs tr = u u u ta on mB i 80 p F C a p a c ito rs T im e and C os t S a v in g s

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

SDS RELAY s2 24v

Abstract: SDS Relais sds relays S2-24V vde 0435 0110 SDS S4 - 24V RELAY SDS S4 s2 12V SDS RELAY SDS Relais 12v SDS RELAY s3 24v
Contextual Info: S-R elay Universal p rinted circuit board relay Mono- or bistable SUPERB RELAY TECHNOLOGY P o w e r s w itc h in g ran g e fro m 1 nW to 1 KVA S e aled plastic enc lo su re IP67 N e w 5 layered tw in lin e a r co n ta c ts V o lu m e tn c /c o n ta c t re sista n ce

Panasonic NHE

Contextual Info: Panasonic Aluminum Electrolytic Capacitors/NHG Aluminum Electrolytic Capacitors Radial Lead Type Japan M a laysia Series: NHG Type A (Radial Leads) style 04/JIS C 5141 Standard • Features • Smaller than Series NHE • Lifetime: 2000 h at +105 "C ■ R ecom m ended A pplications

IEC418-1

Abstract: IEC68 jv2222
Contextual Info: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS o Housing diameter 5 mm o For consumer and industrial equipm ent Q UICK REFERENCE D A T A Cm m -^m ax 1.5/5 to 3.5/27 pF Rated voltage 150 V Housing díam ete' 5 rnrn C lim atic category 40/85/21 fo r PC versions and

5082-2350

Abstract: hp 2817 hpa 2350 5082-2817 5082-2200 diode hp 5082-2817
Contextual Info: Wlf^k HEWLETT 4447SÔH GGOTtiHb SB6 ^BHPA HEULETT-PACKAR] / CMPNTS D b lE PACKARD Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2350/51 5082-2400/01 5082-2702/07 5082-2723/24 5082-2817/18 D IA M E T E R 1 63 064) 1 6 2 ( 060) Features

SN54HC253

Abstract: SN74HC253 BC215
Contextual Info: SNS4HC253, SN74HC253 DUAL 4-LINE TO 1-LIME DATA SELECTORSfMULTIPLEXERS WITH 3-STATE OUTPUTS D 2 6 8 4 . D EC E M B E R 1 9 8 2 - R E V IS E D JU N E 1 9 8 9 3-S tate Versions of 'H C 1 5 3 S N 5 4 H C 2 6 3 . . . J PACKAGE S N 74H C 253 . . . OR N PACKAGE

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND IT'S SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

ICAN-6267

Abstract: ICAN-6739 CD4025AE vacuum tube applications data book ICAN-6716 CD4061AD transistor bf 175 CD4040AF ican 6539 CD4059AD
Contextual Info: mItC J I COS/MOS Integrated Circuits This D A TA B O O K contains complete data and related application notes on COS/MOS digital integrated circuits presently available from RCA Solid State Division as standard products. For ease of type selection, functional diagrams are shown

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

20PF

Abstract: LC7938C SW63 6596 driver block 325-6-1
Contextual Info: Ordering number : EN3256 C M O S LSI LC7938C a-Si Contact Type Image Sensor-Use Driver F e a tu r e s • High-speed silicon gate CMOS device • On-chip high-speed shiftable 5MHz max. 64-bit bidirectional shift register, 64-bit sensor d riv er analog switch

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS VR n ic K ic o n M iniature Sized Approved by R eliability C en te r for Electronic Com ponent, Japan-C e rtifica tio n No. RCJ-03-22C series R ^ Approver; Anti-Soivent Feature l> rau gh 1CCW only • One rank smaller case sizes than VX series.

elna capacitor rsh

Abstract: elna rsh A5268 elna rsg elna ce Elna ce 105 elna ELECTROLYTIC capacitor, .4700 uF 35V elna capacitor ce s600 015 Elna ce 85
Contextual Info: -1 TYPE ELNA RSH E D- 8 8 0 1 r M I N I A T U R E A L U M I N U M E L E C T R O L Y T I C C A P A C I T O R S FOR SWITCtfING REGULATORS AND OTHER HIGH FREQUENCY APPLICATIONS. ♦ H i gh 1 i g h t s Terminal Se rie s name Rated V o ltage range V -55— +105

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS nxchicon M iniature Sized, Low Im pedance, For Switching Power Supplies P S series Snalter Law impedance Anti-Soivent Feature Through 100V on!v : • Wide temperature range type, miniature sized. PS P J iSpecifications Item

1414-6F

Abstract: 2620D 14K4
Contextual Info: FLM1414-6F FUJITSU Internally M atched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

RCA-5636

Abstract: 5636 TUBE RCA 9212 5636 u2000 subminiature tubes
Contextual Info: 5636 SHARP-CUTOFF PENTODE Two Independent Control Grids TENTATI VE RCA-5636 i s a s u b m i n i a t u r e s h a r p - c u t o f f pentode o f th e h e a t e r - c a t h o d e t y p e hav ing f l e x ­ i b le leads. I t i s i n t e n d e d p a r t i c u l a r l y f o r use