TIC 160 Search Results

Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High d ensity 4 m egabit and 8 m egabit sta tic RAM m odules T he ID T 7M P V 4060 is a 128K x 32 sta tic RAM m odule

Contextual Info: MITSUBISHI ME M O R Y CARD STA TIC R A M CARDS MF3128 M L D A P X X 8-b it Data Bus M F3256- M L D A P X X Static R A M C ard M F3512-M LD A P X X Connector Ty pe Two-piece 60-pin DESCRIPTION 160-pin connector M its u b is h i's sta tic R A M cards provide large

rse2

Contextual Info: AC705 • ACT705 54AC/74AC705 • 54ACT/74ACT705 A rith m e tic Logic Unit fo r Digital Signal Pro c essin g A p p lic a tio n s Description Connection Diagrams uQ The ’A C /’ACT705 is a high-speed a rith m e tic processing integrated c irc u it w h ich is packaged in

Contextual Info: PRODUCT INFORMATION Half-Duplex Communication 1A212 H igft-Ffcrtormancc D UPL£X O p tic a l a n d E le c tr ic a l C h a r a c te r is tic s PARAMETER SYMBOL Fiber-Coupled Power SS; M IN TYP 25 55 ^liber R g . 1,2,8.3 (Table 1) :¥j¥: Rise and Fall Time

Contextual Info: T-l LEDs Non-Diffused Data Display Products • Red, Amber, Amber/Yellow, Yellow, Green, Blue • Non-Diffused Tinted Encapsulation • Luminous Intensities from 2 to 160 mcd E le c tr o -C ip tiC O iI C b a r a c U e r is tic s @ T k - 2 5 ° C A b s o lu te M a x im u m R a tin g s @ T A = 25®C

1N3904

Abstract: MHW590 f2n3904 MFOE3202 ir receiver motorola photodyne photodyne 88XLA SMA 905 fiber dimensions 2N3904 88XLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFOE3200 MFOE3201 MFOE3202 Fiber O p tic s — M O D F am ily In fra re d LED . . d esig n ed fo r fib e r o p tic s a p p lic a tio n s re q u irin g h ig h p o w e r and fa s t respo n se tim e . It is sp e c tra lly m a tch e d to th e firs t w in d o w m in im u m a tte n u a tio n re g io n o f m o s t glasscore fib e r o p tic s cables. M o to ro la 's package fits d ire c tly into sta n d a rd fib e r o p tic s c o n ­

TS561

Contextual Info: U 20/16/7 Core and Accessories B67348 C o re with rectangular cross section Dimensions in accordance with DIN 41296 M a g n e tic c h a ra c te ris tic s (p e r set) Zl/A = 1,24 m m -' 4 Ae A min l/e = 68 = 55 m m 2 = 55 m m 2 = 3 740 m m 3 mm FUSO006-*

arithmetic logic unit

Contextual Info: Ao ti 6 CMOS 4-Bit Arithmetic Logic Unit High-Voltage Types (20-Volt Rating The RCA-CD4Q181B is a low -pow er fo u r-b it parallel a rithm e tic logic u n it (A L U ) capable o f providing 16 bin a ry arithm e tic operations on tw o fo u r-b it w ords and 16 logical func­

ic LM 356 equivalent

Abstract: L272M equivalent I488P L7900cv tdb 4558 L7800CV TL 084 27m4 regulators equivalent l387a op amp mc 4558
Contextual Info: SELECTION GUIDE CMOS OP-AMPs Package Type Description Pins D: H: J: N: P la s tic m ic ro p a c k a g e M e ta l c a n C e rd ip P la s tic d u a l in lin e CMOS SINGLE TS 271, A.B Programmable 8 N.D.J Low Power Medium Supply Current High Speed 8 8 8 N.D.J

B66329-G-X167

Abstract: B66329 B66329-G250-X127 siemens N27 B66329 IEC1246 MT 354 B66329GX167
Contextual Info: E 42/21/20 Core • • B66329 In accordance with IEC 1246 E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s per set H /A /e Ae / t miM 14 - 0,41 m m -1 = 97 mm = 234 m m 2 = 229 m m 2 =22700 mm3 Approx. w eight 116 g/set Ungapped PU Ordering code

93C39

Abstract: CD54HC4520
Contextual Info: High-Reliability High-Speed CMOS Logic ICs C D 54HC4518/3A C D 54H C T 4518/3A Burn-ln Test-Circuit Connections Static OPEN 3-6,11-14 C D 5 4 H C /H C T 4 5 1 8 Dynamic Use S ta tic II fo r /3 A b u rn -in and D yna m ic fo r L ife Test. STA TIC B U R N -IN I

Contextual Info: gjJÎ'N 256K X 32 BiCMOS/CMOS STATIC RAM MODULE | | dt IDT7MP4045 Integrated Dev ce Technology, Inc. FEATURES: DESCRIPTION: • H igh d e n s ity 1 m e g a b y te s ta tic R A M m o dule T h e ID T 7 M P 4 0 4 5 is a 2 5 6 K x 3 2 s ta tic R A M m o dule

k460

Contextual Info: E 25/13/7 EF 25 Core • • B66317 In accurdarice wilh IEG 1246 E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s (per set) 'Ll/A = 1 ,1 mm-1 /e Ae A min l/e = 57,5 mm = 52,5 m m z = 51,5 m m 2 = 3 020 m m 3 A pprox. w eight 16 g/se1

TRANSISTOR 2SC 983

Abstract: INTERNATIONAL RECTIFIER TNR*G 1000C HFA16PA120C
Contextual Info: International i»r:Rectifier_ HEXFRED U n its C h a ra c te ris tic s 1200 V V rrm If A V 8.0 A trr (ty p ) 28 ns 140 nC Q r r (ty p ) HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M a jo r R a tin g s a n d C h a ra c te r is tic s (p er Leg) Vr Provisional Data Sheet PD-2.361

Contextual Info: 1 MEGABIT 128Kx 8-BIT CMOS STATIC RAM MODULE I IDT8M 824S Integrated D evice Technology. Inc FEATURES: • H ig h -d e n sity 1024K (128K x 8) C M O S sta tic RAM m o du le • E quiva len t to JE D E C sta n d ard fo r futu re m o n o lith ic 128K x 8 s ta tic RAMs

TPS 1028

Abstract: 3 DG 1008 MBM2011A MIL-883 bubble memory PS512
Contextual Info: MOTOROLA □ A d v a n c e Inform ation GENERAL DESCRIPTION 1 M X 1 BIT MAGNETIC BUBBLE MEMORY DEVICE The M BM 2011A is a 1,048,576 2^0 b it m a gn e tic b u b b le m e m ­ o ry device. A ll re qu ire d m a gn e tic co m p o n e n ts, in c lu d in g p er­

TIC 2460

Contextual Info: E 8,8 Core B66302 • In a c c o rd a n c e w ith IF C 1 ? 4 fi • For m iniature transform ers, e.g. DC/DC converters for surface mounting • A v a ila b le w ith S M D co il fo rm e r • E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s p e r set

IDT7M4077

Contextual Info: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh d e n s ity 8 m e g a b it s ta tic R A M m o d u le T h e ID T 7 M 4 0 7 7 is a 2 5 6 K x 3 2 s ta tic R A M m o d u le co n ­

Contextual Info: yAiSHi MINIATURE A L U M IN U M E LE C T R O L Y TIC C A P A C IT O R S HP Standard bi-polarized series ® Endurance :+105°C 1,000 hours ® RoHS Compliant ♦ SPECIFICATIONS Ite m s C h a r a c te r is tic s Category T e m p e ra tu re Ran ge -40 to +105°C 6.3 to 100Vdc

m33 tf 130

Abstract: 1001 fba hybrid
Contextual Info: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7

Contextual Info: £ HV9120 HV9123 S u p e r t e x in c . ^ P re lim in ary High-Voltage Current-Mode PWM Controller Ordering Information M ax D u ty C yc le 16 P in P la s tic D IP P a c k a g e O p tio n s 2 0 Pin P la s tic P L C C 16 Pin C e ra m ic D IP D IC E 4 9% H V 9120P

74163 four bit binary counter

Abstract: LS162A 74163 pin configuration counter diagram 74161 162 bcd 74160 function table pin diagram of 74163 pin diagram of 74160 74LS163A equivalent LS160A
Contextual Info: 74160, 74161, 74163, LS160A, LS161A, LS162A, LS163A S ig n e tic s Counters '160, '162 BCD Decade Counter '161, '163 4-Bit Binary Counter Logic Products Product Specification FEATURES • Synchronous counting and loading • Two Count Enable Inputs for nbit cascading

AM2168-35

Abstract: AM2169-40
Contextual Info: A m 2 1 6 8 / A m 2 1 6 9 4096 X 4 Static R/W Random-Access Memory DISTINCTIVE CHARACTERISTICS High spee d — a cce s s tim es as la s t as 40 ns Fully sta tic storage and in te rfa c e circuitry No clo cks o r tim ing sig nals required A u to m a tic pow er dow n w hen de s e le c te d Am 2168

HIGHWAY 09a ic

Abstract: HIGHWAY 09A Diode CK 99A bubble memory f173
Contextual Info: November 1980 NBM2011 1M x 1 Magnetic Bubble Memory Device General Description The NBM2011 is a 1,048,576 220 b it m a g n e tic b u b b le m em ory device. A ll required m a g n e tic co m p o n e n ts, in­ c lu d in g th e d rive fie ld c o ils , p erm a n e nt m a g n e ts and pro­