TIC 120 Search Results

MK1007P

Abstract: DTL or TTL integrated logic circuits MK1007 TMS3409 LTRT ic PIN-FOR-PIN REPLACEMENT 2S32B
Contextual Info: s ig n o tic s QUAD 80 BIT S T A T IC SH IFT H w i r i a 2532 SILICON GATE MOS 2500 SERIES d e s c r ip t io n Th eSig n etits 2 532 Sta tic » ¡ f t Register consists of enhance­ ment mode P-Channel silicon gate MOS devices integrated on a single m onolithic chip. Each o f the fo ur 8 0 -b it reqisters

Contextual Info: AmPALC29MA16 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION D is tin c tiv e C h a ra c te ris tic s • • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ grammability 16 bidirectional user-programmable I/O logic macro­

Contextual Info: r r i m f LT1166 ü TECHNOLOGY P ow er O u tp u t S tag e A u to m a tic Bias System F€flTU KS DCSCM PTIOn • Set Class AB Bias Currents ■ Eliminates Adjustments ■ Eliminates Thermal Runaway of Iq The LT 1166 is a bias generating system for controlling

QAP409

Contextual Info: n/A-rOM/ MICROELECTRONICS bTE D St421fl3 0001335 347 M H A C O A fa SPST Reflective Switch Modules 2951 Series Features • ■ ■ ■ Mechanical Outline Top View Broadband Frequency Ranges H erm e tic Package Stripline C om patible C om pact Size W ith o u t In te rn a l Bias C irc u itry

Synertek

Abstract: SYC2169 SYC2169-3 SYD2169 SYD2169-3
Contextual Info: SY2169 4096 x 4 Static Random Access M em ory ADVANCED INFORMATION Features • • • • • 5 0 n s M a x im u m A d d re ss A cce ss Tim es Fully S ta tic O peration: No C locks or S tro b e s R equired Fast C hip S e le ct A cce ss Tim e: 4 0 ns Max.

F02CT

Abstract: M83513/13-B02CW
Contextual Info: MK—2 5 3 —031 —3 3 5 —2 2 0 S M E TA L AirBorn M L - 251 - 0 3 1 —3 3 5 —2 2 0 S (P LA S TIC ) Board (Narrow Footprint) to Cable . 050 " 9 thru 1 00 C ontacts Rugged Board Mount MK, ML MM—2 2 3 —0 3 1 —2 1 3 - 4 1 0 0 (M E TA L) Rugged Cable

Contextual Info: ^ ¡ - 7 - 0 S’ A'&l- i 1 D*U SUBMINIATURE CONNECTORS Crimp Contact Type D*U S u b m in ia tu re c o n n e c to rs fe a tu re crim p -ty p e c o n ta c ts . The c o n ta c ts c a n be te rm in a te d w ith e ith e r a sim p le m anu al crim p in g to ol, or a se m ia u to m a tic crim pin g m a ch in e fo r rapid, high vo lu m e

CFV2-40

Abstract: 10CPV240 25CPV120 25CPV240 50CPV240 75CPV240 90CPV240
Contextual Info: Series CPV Phase Control Modules • 120 & 240 Vac Models • 0-5 Vdc Phase Control Models CFV120 and CFV240 auxiliary function modules provide control of the phased turn-on of a solid state relay, in response to the application of a 0-5 Vdc control signal. They must be used with

Contextual Info: Paradigm ' PRELIMINARY PDM21024LL 128K x 8-Bit Low Power 2.7 Volt Features Description □ High-speed access times Com'l: 100 and 120ns The PDM21024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this device is accomplished when the write enable WE

Contextual Info: J V W Y X A J V X ± 1 5 k V ESD-Protected, Slew -R ate-Lim ited, Low-Power, RS-485/RS-422 Transceivers _ These transceivers draw as little as 120pA sup ply current w hen unloaded or w hen fully loaded with disab led drivers s e e S e le c tio n T a b le . A d d itio n a lly , th e M A X 4 8 1 E ,

Contextual Info: L 7 L I H ^ A B _ LTC1483 TECHNOLOGY Ultra-Low Power RS485 Low EMI Transceiver with Shutdown K flT U IK S D € S C R IP T IO n • Low Power: Ice = 120jjA Max with Driver Disabled ■ Ice = 500|iA Max with Driver Enabled, No Load

Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode D river C o m p le m e n ta ry e n a b le In p u ts a llo w th e M AX3261 to Interface with o p e n -flb e r-c o n tro l a rc h ite c tu re — a feature not fo u n d In other 1 ,2 5 G b p s laser d io d e drivers.

2332 eprom

Abstract: TMM2332P 2732 eprom TPU 2732 intel 2732 eprom 2332 rom MOS 2332 rom 0ba3
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 4 ,0 9 6 W ORD X 8 BIT MASK ROM N -C H A N N E L S IL IC O N TMM2332P GATE DESCRIPTION T h e T M M 2 3 3 2 P is a 3 2 7 6 8 - b it read o n ly m e m o ry o rg a n iz e d as 4 0 9 6 w o rd s b y 8 b its w ith a lo w b it saving in

k1v4

Abstract: k1v16 SIDAC K1V k1v14 K1V6
Contextual Info: SIDAC: K1V14/K1V16 A b s o lu te M a x im u m R a tin g s a Storage Temperature T s tg - 40 ~ 125 °C Tj 125 °c drm 115 V V ^ IEsit RMS On-state Current t yWtfi Surge On-state Current j^y\/7s it Repetitive Peak On-state Current Critical Rate of Rise of On-state Current

050R02GOF

Abstract: 050R04GOF 050R12GOF
Contextual Info: Anode Gate Silicon Controlled Rectifier Series 050R Dim. Inches Minimum Anode A B C D E F G H J K M N P R S Gate Cathode Note 1: 1 /4 -2 8 UNF-3A Note 2: Full thread within 2 1/2 threads M illim eter Maximum Minimum Maximum Notes 1 .677 -1.200 .427 .115

2SA1804

Abstract: 2SC4689
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1804 Silicon PNP Power Transistors D ES C R IP TIO N • W ith TO -3P FM package • C om plem ent to type 2SC4689 A P P LIC A T IO N S • Power am p lifie r applications • Recom m end for 55W high fidelity audio

Contextual Info: PDM21096LL 512K x 8-Bit Low Power 2.7 Volt Features Description □ High-speed access times Com'l: 100 and 120 ns The PDM21096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this device is accomplished when the write enable WE

3sm diode

Abstract: 3SM* diode
Contextual Info: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code

Contextual Info: SÌ4420PY Vishay Siliconix N-Channel 30-V D-S MOSFET V o * (V) fte S fO N l PI Id (At 0.009 @ V GS = 10 V ±125 0.013 @ V GS = 4.5 V ± 1 0 .5 30 SO-fl 1 0 ' ~ "^ It Ò s N 'C hannel MOSFET A B S O L U T E M A X IM U M R A T IN G S f T , ?5 C U N L E S S O T H E R W IS E N O T E D }

Contextual Info: um TECHNOLOGY L T 1208/ 1 209 D ual a n d Q u a d Very High S p ee d O p A m p s August 1992 F€ATUR€S D ES C R IP T IO N • ■ ■ ■ Unity Gain Stable 45MHz Gain Bandwidth 400V/[iS Slew Rate 7V/mV DC Gain, R|_=500£2 The LT1208/1209 are dual and quad very high speed

crydom d2425

Abstract: A2450 A2475 A2490 CMA24110 CMA2425 CMD24110 CMD2475 D2425 D2450
Contextual Info: Series CM D24/ CM A24 25-125Am p • 240 Vac • AC Output • Zero Voltage and Random Turn-On Switching • Panel Mount • Status Indicating LED • DC or AC Control M O D E L N U M BERS OUTPUT SPECIFICATIONS Featuring state-of-the-art Surface M ount Technology, these SPST-NO

Diode BFT smd

Abstract: diode smd kl1 0/diode smd kl1
Contextual Info: Schottky Barrier Diode Single Diode o u tlin e Package : M1F m t m m M1FS4 40V 1.33A io V - P v - ? C ath o d e m ark CD Feature • /J v g U S M D • Small SM D >Tj=150°C • Tj=150°C • V f =0.55V • Low V f = 0 .5 5 V • P r r s m 7 7A ' ' 5 > î ^ i

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE 1. Vupc 2. UFo 3. 4. Up V upi 5. Vvpc 6. VFÒ 7. 8. Vp V v pi 9. Vwpc 10.WFO 11. W p 12 .V W P I 1 3 . V nc 1 4 .V N I 1 5 .B r 16. U n 17. V n 1 8 .W n 19. Fo Description: Mitsubishi Intelligent Power

Contextual Info: HAK 1 5 IH? 19-1972; R e v 1; 10/92 CMOS, 12-Bit, Serial-input M ultiplying DAC G e n e ra l D e s c rip tio n The M A X 543 c o n ta in s a 12 -b it R-2R ty p e D A C , a s eria l-in p a ra lle l-o u t s h ift re g is te r, a D A C re g is te r a n d c o n tro l