THRU Search Results

1n758

Contextual Info: TYPES 1N746 THRU 1N759, 1N746A THRU 1N759A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN NO . D L -S 7311942, M A R C H 1973 V z . . . 3.3 V to 12 V, P d • • •400 mW • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction description and mechanical data

str f 6454

Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
Contextual Info: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453

A1N4752

Abstract: 1N4728 1N4732
Contextual Info: TYPES 1N4728 THRU 1N4752, 1N4728A THRU 1N4752A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN f N O . D L -S 7 3 1 1 9 4 9 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V PD • • • 1 W • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction

s468a

Abstract: SN74ALS465A
Contextual Info: TYPES SN54ALS465A THRU SN54ALS468A, SN74ALS465A THRU SN74ALS468A OCTAL BUFFERS WITH 3 STATE OUTPUTS D 2 6 6 1 , A P R IL 1 9 8 2 - R E V I S E D D E C E M B E R 1 9 8 3 Mechanically and Functionally Interchangeable with D M 7 1 / 8 1 L S 9 7 and D M 7 1 / 8 1 L S 9 8

TID40

Contextual Info: TYPES TID40 THRU TID44 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 8 6 0 5 , M A R C H 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 H IG H -V O L T A G E SW ITCH IN G D IO D E S • Rugged Double-Plug Construction m echanical d a ta D o u b le -p lu g c o n s tru c tio n a ffo rd s in tegral p o s itiv e c o n ta c ts b y m eans o f a th e rm a l co m p re ssio n b o n d . M o istu re -fre e

2N3806

Abstract: 2N3807 NS2N 2N3808 2n 3808 2N3809 2n3811
Contextual Info: TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 72 11686. M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E R E C O M M E N D E D FOR • Differential Amplifiers • High-Gain, Low-Noise Amplifiers • Low-Level Flip-Flops

SN54LS628J

Contextual Info: SN54LS624 THRU SN54LS629, SN74LS624 THRU SN74LS629 VOLTAGE-CONTROLLED OSCILLATORS D 2 5 0 1 , JA N U A R Y 1 9 8 0 - REVISED M AR C H 1 9 9 8 Separate Supply Voltage Pins for Isolation of Frequency Control Inputs and Oscillators from Output Circuitry Highly Stable Operation over Specified

2N5067

Abstract: tl 5069
Contextual Info: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903

2n3972

Abstract: transistor 2N3972
Contextual Info: TYPES 2N3970 THRU 2N3972 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L - S 7 31 1 9 1 3 . M A R C H 1973 S Y M M E T R IC A L N-C H A N N EL F IE L D -E F F E C T TRAN SISTO RS FOR HIGH-SPEED C O M M U TA TO R A N D CHOPPER APPLICATIO N S

2n6325

Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
Contextual Info: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current

TID136

Abstract: TID139 N6040
Contextual Info: TYPES TID135, TID136, TID139 THRU TID144 SILICON DIODE ARRAYS B U L L E T IN N O . D L -S 7 3 11 7 0 7, A P R IL 1 9 7 2 - R E V IS E D M A R C H 1973 L O G IC A N D C O R E -D R IV E R D IO D E A R R A Y S For Application With Magnetic Cores • Plated-Wire Memories

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S LTR E1 DESCRIPTION DATE DWN ADD - 1 3 THRU - 17, MATCH PRODUCTION DRWING REV’S 6 /F E B /0 7

2N4913

Abstract: 2N4915 2N4914 2N4906
Contextual Info: TYPES 2N4913, 2N4914, 2N4915 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS P nj FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4904 THRU 2N4906 • 87.5 W at 2S°C Case Temperature • 5 A Rated Collector Current

652 HE

Abstract: 74AS651
Contextual Info: TYPES SN54ALS651 THRU SN54ALS654, SN54AS651, SN54AS652 SN74ALS651 THRU SN74ALS654. SN74AS651, SN74AS652 OCTAL BUS TRANSCEIVERS AND REGISTERS D 2 6 6 1 . DECEMBER 1 9 8 3 • Bus Transceivers/Registers • Independent Registers and Enables for A and B Buses

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

54LS466

Abstract: 74LS467 74LS465 74LS468 74ls46 81LS98 74ls466
Contextual Info: SN54LS465 THRU SN54LS468, SN74LS465 THRU SN74LS468 OC TAL BU FFERS W ITH 3 S T A T E OUTPUTS D 2 6 3 1 , JA N U A R Y 1981 - SN 54LS465 AND SN 54LS466 . . . J PACKAGE SN 74LS465 AND SN 74LS466 . . . DW OR N PACKAGE TOP VIEW! G1 A1 • 3-State Outputs Rated at lo L o f 12 m A and

Contextual Info: TYPES SN54ALS646 THRU SN54ALS649, SN54AS646, SN54AS648 SN74ALS646 THRU SN74ALS649, SN74AS646, SN74AS648 OCTAL BUS TRANSCEIVERS AND REGISTERS D 2 6 6 1 . DEC EM BE R 1 9 8 2 -R E V IS E D DEC EM BE R 1 9 8 3 • Independent Registers for A and B Buses • Multiplexed Real-Time and Stored Data

SN54HC

Abstract: a6j4 54HC368 HC365M
Contextual Info: SN54HC365 THRU SN54HC368 SN74HC365 THRU SN74HC368 HEX BUS DRIVERS WITH 3-STATE OUTPUTS D26S4, DECEMBER 1982-REVISED JUNE 1989 TO P VIEW G l[ Choice of True or Inverting Outputs Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers,

3N155

Abstract: 3N157 3N158A 3N155A 3N156 3N157a
Contextual Info: TYPES 3N155 THRU 3N1S8. 3N155A THRU 3N158A P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T I N N O . O L - S 7 3 1 1 9 1 8 , J U N E 1 9 7 3 E N H A N C E M E N T -T Y P E * M O S SILICO N T R A N S IS T O R S

Contextual Info: REVISIONS DESCRIPTION REV ±.020 .750 1.000 SQ 25.4 ^ 18.2 04 t REVISED 32/15/95 B PER EC 0U20-0116-01-02 10/29/01 APPROVED tTLy HEX .500 12.7 ACROSS FLATS TYP — DATE 7mm PRECISION CONNECTOR .162 DIA 4.1 .050 DIA - 1 1.3 THRU 4 PLACES S L I D E ASSEMBLY

54f620

Contextual Info: SN54F620 THRU SN54F623, SN74F620 THRU SN74F623 OCTAL BUS TRANSCEIVERS D2932, MARCH 1987-REVISED JANUARY 1969 Local Bus-Latch Capability SN54F' . . . J PACKAGE SN74' . . . DW OR N PACKAGE Choice of Inverting or Noninverting Logic TOP VIEW! Choice of 3-State or Open-Collector Outputs

74ls610

Abstract: D2549 74LS612 SN74LS610 TMS9900 LS610
Contextual Info: SN54LS610, SN54LS612, SN74LS610 THRU 74LS613 MEMORY MAPPERS D2549, JANUARY 1 98 1 -REVISED MARCH 1988 • Expands 4 Address Lines to 12 Address Lines S N 5 4 L S ' . . . J D P AC K A G E SN74LS' . JD OR N P AC K A G E TO P VIE W • Output Latches Provided on 'LS610 and

TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Contextual Info: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly

54LS624

Abstract: 74ls324 74ls625 74ls629 74LS626 74LS628 74ls624 54LS629 54LS626
Contextual Info: I TYPES SN54LS624 THRU SN54LS629, SN74LS624 THRU SN74LS629 VOLTAGE-CONTROLLED OSCILLATORS D 2501, JA N U A R Y 1980 - • S eparate Supply Voltage Pins for Isolation of Frequency Control Inputs and Oscillators from O u tpu t Circuitry • Highly Stable Operation over Specified