THOMSON TR 62 Search Results

ic tea 1090

Abstract: M/ic rca 645 TEA 1090
Contextual Info: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR

Contextual Info: M JE 371 M JE 521 T SGS-THOMSON ^ 7 # SSIOISIBElIILIICTISOKlEi C O M PLE M E N TA R Y PO W ER TR A N SIS TO R S DESCRIPTIO N The MJE521 is a silicon epitaxial-base NPN tran­ sistor in Jedec TO-126 plastic package, intended for use in 5 to 20W audio amplifiers, general purpose

microprogram

Abstract: TS2910 TS2910CJ TS2910CJ-D TS2910CP TS2910CP-D
Contextual Info: THOMSON SEMICONDUCTEURS TS2910 M IC R OPR OGR A M C O N TR O L LE R The TS 2910 M ic ro p ro g ra m M ICROPROGRAM C O N TR O LLE R c o n t r o lle r is an address se q u e n ce r in te n d e d f o r c o n t r o llin g th e sequence o f e x e c u tio n o f m ic ro in s tru c tio n s s to re d in

S-9301

Abstract: L6212 TS200n S9301 Proportional solenoid driver ts200n ilr3 T06A
Contextual Info: T'ìS'ìSi? DGEEObM □ 30E ]> —# k7# S C S -T H O M S O N R a D ^ io m L U o ir^ o K iD e s S G S-THOMSON L 6212 V 3 Z- HIGH CURRENT SOLENOID DRIVER P R ELIM IN A R Y DATA • HIGH VOLTAGE OPERATION UP TO 50 V ■ HIGH O UTPUT CURRENT CAPABILITY (UP TO 6 A)

tpa 1308

Abstract: 110B CB-210 TPA62A TPA68A TPA180B12
Contextual Info: O THOMSON SEMICONDUCTEURS TPA 62 A — ►270 A -12 or 18 TPA 62 B — 270 B -12 or 18 TRISIL TRISIL • V r m : 5 6 V —► 243V V BO m a* : 75 V — *-360 V l(BO) m ax :300 mA Bidirectional device used to telephone protection. lH = 120 m A w ith suffix 12

EF68A00

Abstract: EF6800
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6800 MPU NMOS 8-BIT MICROPROCESSOR UNIT DESCRIPTION The EF 6800 is a m onolithic 8-bit microprocessor form ing the central control function fo r THOMSON COMPOSANTS MILITAIRES ET SPATIAUX 6800 family. Compatible w ith

68hc04

Abstract: EF68HC04P3P et2732 6252 IC circuit diagram EF6800 322 timer et2716 ef68hc04j3 EF68HC04 EF68HC
Contextual Info: EF68HC04P3 ADVANCE INFO RM ATIO N H CM O S 8-B IT HCMOS M ICRO CO M PUTER U N IT HIGH DENSITY CMOS SILICON GATE he E F 6 8 H C 0 4 P 3 m icro com puter u n it (M C U ) is a m em ber o f the E F 6 8 H C 4 fa m ily of very low cost and low pow er single chip m icrocom puters,

HP3779C

Abstract: ETC5057 tic 2260 Thomson 1980 nek 2501 LED audio spectrum analyser circuit diagram IrL 1540 N ETC5054 J16A TP3054
Contextual Info: E T C 5 0 5 7 • ETC5 0 5 4 MONOLITHIC SERIAL INTERFACE CODEC/FILTER T h e E T C 5 0 5 7 / E T C 5 0 5 4 fa m ily c o n s is ts o f A - la w a n d p-la w m o n o lith ic PC M C O D E C /filte rs u tiliz in g th e A /D a n d D /A c o n v e rs io n a r c h ite c tu r e

TRDV1225

Abstract: T048 pts300
Contextual Info: S G S-THONSÔN 7ÛC D | 7 1 2 ^ 3 ? ODOV-ÎSb b | ~ TRDV 125 -►TRDV 1225 ALTERNI STO RS T - H . Ç '- f S r ' New range of solid state AC - switches w ith very high commutating capability. . FEATURES: ' - i — dv/dt c > 2 0 0 V /|» (5 0 H *) — V D R M u p to 1 20 0 V

ETC5064

Abstract: ETC5067 J20A mcl gra 3 500Hz-1
Contextual Info: ETC5067 • ETC5064 CMOS M O N O LITH IC S E R IA L IN T ER FA C E C O D EC /FILTER W IT H R E C E IV E P O W E R A M P L IF IE R The ETC5064 ip-law and ETC5067 A-law) are monolithic PCM CO DEC/FIL­ T E R S utilizing the A/D and D/A conversion architecture shown in Figure 1,

ETC5056

Abstract: TP3051 AN-42 ETC5051 IETC5056 J20A DB3 thomson
Contextual Info: V' THOMSON SEMICONDUCTEURS ETC5051« ETC5056 M O N O LITH IC PARALLEL INTERFACE CO DEC/FILTER The ETC5051/ETC5056 fam ily consists o f A -la w and ^ -la w m onolithic PCM C O DE C /filters utilizing the A / D and D /A conversion architecture show n in Figure 1, parallel I/O data bus interface. The devices are fabricated using double­

553c

Abstract: DIL M50 VECTOR GHT -453 11CTC TS2914 mk6 wiring diagram
Contextual Info: THOMSON SEMICONDUCTEURS TS2914 V E C T O R E D P R IO R IT Y IN T E R R U P T C O N T R O L L E R T h e T S 2 9 1 4 is a high -sp e ed , e ig h t-b it p r io r it y in t e r r u p t u n it t h a t is casca da ble t o han dle a n y n u m b e r o f p r io r it y in t e r r u p t re q u e st levels. T h e h ig h ­

TS8328

Abstract: TS832 la 78140
Contextual Info: TS8328 ADVANCE INFORM ATION VIDEO SPEED 8-BIT FLASH A-D CONVERTER The T S 8 3 2 8 is the minim al configuration 2 0 pins of th e T S 8 3 0 8 (24 pins) full flash ADC. This m onolithic parallel A / D converter is designed for 2 0M S P S conver­ sion rate. Sampling is performed via a resistor ladder and 2 5 6 auto­

Contextual Info: SbE » • 7^237 S G S -T H O M S O N G T-HS-2ì-jy 0G4G371 lb2 ■ S6TH M54HC4020 M74HC4020 l S 6 S-THOnSON 1 4 -S T A G E B IN A R Y C O U N T E R ■ HIGH SPEED f M A X = 60 MHz TYP at VCC = 5V ■ LOW POWER DISSIPATION lCC = 4 (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY

27S35

Abstract: cioph 2909A lathes TS2909A TS2911A am27s35 k1kk
Contextual Info: THOMSON SEMICONDUCTEURS TS2909, A TS 2911, A M IC R O P R O G R A M SEQUENCERS M IC R O PR O G R A M SEQUENCERS T h e T S 2 9 0 9 A is a f o u r - b i t w id e a d d re s s c o n t r o l l e r in te n d e d f o r s e q u e n c in g t h r o u g h a s e rie s o f m i c r o i n s t r u c t i o n s c o n t a in e d i n a R O M o r P R O M .

2901c

Abstract: 2901s basic block diagram of bit slice processors amd 2901 alu amd 2904 amd 2901 example CMJB g2gt ts2901s 25CC
Contextual Info: THOMSON SEMICONDUCTEURS TS2901C 4-B IT BIPO LA R MICROPROCESSOR 4-B IT BIPOLAR MICROPROCESSOR T h e T S 2 9 0 1 i n d u s t r y s ta n d a r d f o u r - b i t m ic r o p r o c e s s o r s lic e is a h ig h ­ s p e e d c a s c a d a b le A L U in t e n d e d f o r u se in C P U s , p e r ip h e r a l c o n t r o ll e r s ,

2901s

Abstract: amd 2901 alu TS2901BCP-D amd 2904 2901B 8 2901B amd 2901 example st 2901 tpe tesb I678
Contextual Info: THOMSON SEMICONDUCTEURS TS2901 B 4 -B IT B IP O L A R M IC R O P R O C E S S O R S L IC E 4 -B IT B IP O L A R M IC R O P R O C E S S O R S L IC E T h e f a u r - b i t b i p o l a r m ic r o p r o c e s s o r s lic e is d e s ig n e d as a h ig h - s p e e d ca s c a d a b le e le m e n t in t e n d e d f o r u s e in C P U 's , p e r ip h e r a l c o n t r o ll e r s , p r o g r a m ­

R5609

Abstract: R5611 R5612 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532 TS8540
Contextual Info: TS85XX SW ITCHED CA PAC ITO R M A S K P R O G R A M M A B LE FILTER T h e T S 8 5 X X c irc u its a re H C M O S u n iv e rsa l filte r s c o n ta in in g a m ask p ro g ram m a b le sw itch e d -c a p a c ito r c a sca d a b le stru c tu re a n d tw o u n co m ­

Ceramic Resonator

Abstract: M51308SP ta8691n crystal 38khz M51308SP DATASHEET ta7777p LA7650 toshiba saw resonator TC31018P ta8691
Contextual Info: Oscilent Corporation | 637 Series Ceramic Resonator Page 1 of 2 Ceramic Resonator Series Number Package Description Last Modified 637 ZTB Ceramic Resonator IC Applicable Jan. 01 2007 FEATURES - IC Applicable Ceramic Resonator - Low Frequency - High stability

16F84 lcd 2x16

Abstract: 2X16 lcd module pic16f84 78L05 SMD elektor 10k multiturn preset testing IC 555 using multimeter 20MHz quartz crystal frequency meter pic 16f84 elektor circuit 16F84 LCD
Contextual Info: TEST&MEASUREMENT Autoranging Capacitance Meter wide-range, PIC-controlled Design by Flemming Jensen Most commercial digital Capacitance meters can measure capacitors from a few pFs picofarads up to 2,000 µF (microfarads). A few are able to measure up to 20 mF. Circuits like audio power amplifiers, switchedmode power supplies, printers and photocopiers often incorporate really

DIODE 248

Contextual Info: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

MK68590

Abstract: 82588 generation circuit of manchester 1N914 MK5035N delay echo circuit diagram Industrial Products mostek Mostek counter
Contextual Info: THOMSON MK5035N COMPONENTS Z S ta r L A N E N C O D E R D E C O D E R V MOSTEK C O M M U N IC A T IO N S P R O D U C T S FEATURES C C onform s w ith StarLAN specification. C Auto com pensation for line reversal. □ C om patible w ith M ostek M K68590 LAN C E and In­

Contextual Info: APT60M75JVFR 600V Ω 62A 0.075Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT60M75JVFR

Contextual Info: APT60M75JVFR 600V Ω 0.075Ω 62A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®