THOMSON TR 62 Search Results

SMAJ130A-TR

Abstract: DBT 134 SMAJ15A-TR SMAJ33A-TR
Contextual Info: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANSIL PRELIMINARY DATASHEET FEATURES • PEAK PULSE POWER: 400 W (10/1 OOO^s ■ STAND OFF VOLTAGERANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES . LOW CLAMPING FACTOR ■ FAST RESPONSETIME

diode s 30ca

Abstract: BM 2ca SMAJ15A-TR
Contextual Info: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANS IL FEATURES • PEAK PULSE PO W ER : 400 W (10/1 OOO^s ■ STAND OFF VOLTAG ERANG E : From 5V to 188V. ■ . ■ ■ UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSETIM E

FZD10

Abstract: FZD12 FZD15 FZD180 FZD22 FZD27 FZD33 FZD39 FZD47 FZ-01
Contextual Info: S"ÎC D I 7 * ^ 2 3 ? S G S-THOMSON 59C # THOMSON-CSF QQ0Eb?â D T- bZ$ 0267é FZD6V8— ►FZD180 DIVISION SEMICONDUCTEURS - BIDIRECTIONALTRANSIENT VOLTAGE SUPPRESSORS DIODES D E PROTECTION BIDIRECTIONNELLES TRANSIL TR A N SIEN T V O LTA G E SU PP RESSO R DIODES ESP EC IA LLY

Contextual Info: rz T SGS-THOMSON SD2920-02 RF MOS FIELD EFFECT TR AN SISTO RS HF/VHF APPLICATIONS • . ■ . . . . . . - 2 - 200 MHz 50 VOLTS IMD - 30dB CLASS AB GOLD METALLIZATION FOR HIGH RELIABILITY DESIGNED FOR LINEAR OPERATION WIDEBAND TUNING SIMPLE BIAS CIRCUITRY COMMON SOURCE CONFIGURATION

ic tea 1090

Abstract: M/ic rca 645 TEA 1090
Contextual Info: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR

P6KE400P

Abstract: P6KE400CP P6KE36CP P6KE6V8CP P6KE36P P6KE15CP P6KE160P P6KE43CP P6KE18CP P6KE440P
Contextual Info: SGS-THOMSON P6KE6V8P,A /440P,A P6KE6V8C P,A /440C P,C A l[Li ÌT[ÈÌ OT]D©i TR A N S IL FEATURES • PEAK PULSE POWER= 600 W @ 1ms . BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. . FAST RESPONSE TIME:

M27C256B-10F1

Abstract: M27C256B M27C256B-15XF1 M27C256B-20XF1 M27C256B-15B1 M27C256B-15F6
Contextual Info: SGS-THOMSON iU C T tR M O O S M 2 7 C 2 5 6 B 256K 32K x 8 CMOS UV EPROM - OTPROM • VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 30 mA _ Stand by current 200 |j.A

Er 38 transformer

Contextual Info: rZT SGS-THOMSON ST5410 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES . SINGLE CHIP 2B1Q LINE CODE TR AN S­ CEIVER • SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIONS ■ MEETS OR EXCEEDS ANSI T 1 .601-1988 U.S. STANDARD ■ MEETS OR EXCEEDS ST/LAA/ELR/822

Contextual Info: M JE 371 M JE 521 T SGS-THOMSON ^ 7 # SSIOISIBElIILIICTISOKlEi C O M PLE M E N TA R Y PO W ER TR A N SIS TO R S DESCRIPTIO N The MJE521 is a silicon epitaxial-base NPN tran­ sistor in Jedec TO-126 plastic package, intended for use in 5 to 20W audio amplifiers, general purpose

ST5410

Abstract: pin diagrom of 4 bit up down counters stt4 st5410c cl-gd STS410 1554k
Contextual Info: /TT SGS-THOMSON ST5410 6 * [ S Î It iC T M 0 g S 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TR AN S­ CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIO NS ■ MEETS OR EXCEEDS ANSI T 1 .601 -1988

13nb60

Contextual Info: C T SGS-THOMSON Ä 7# RfflDOœiLESraOiDOi S T U 13N B 60 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 13N B60 • . . . . . V dss R DS on Id 600 V < 0 .4 5 a 12 .6 A TYP IC A L RDS(on) = 0.4 £2 E X TR E M E LY H IG H dv/dt CAPABILITY

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

microprogram

Abstract: TS2910 TS2910CJ TS2910CJ-D TS2910CP TS2910CP-D
Contextual Info: THOMSON SEMICONDUCTEURS TS2910 M IC R OPR OGR A M C O N TR O L LE R The TS 2910 M ic ro p ro g ra m M ICROPROGRAM C O N TR O LLE R c o n t r o lle r is an address se q u e n ce r in te n d e d f o r c o n t r o llin g th e sequence o f e x e c u tio n o f m ic ro in s tru c tio n s s to re d in

STLT19FI

Contextual Info: ZTê SGS-THOMSON LŒOT «! STLT19 STLT19FI N - CHANNEL EN H A N C EM EN T MODE LOW TH R ESH O LD PO W ER M OS TR A N SISTO R TYPE STLT19 STLT19FI V dss RüS on Id 50 V 50 V 0.15 a 0.15 n 15 A 10 A . • ■ ■ ■ . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

eprom 27C16

Abstract: TH7864A TH7864 thomson tv circuit diagram thomson th 558 DIAGRAM iris sat thomson image intensifier 7864a thomson tv
Contextual Info: SSE D <1021,672 ODODTMT O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX ITHCM THOMSON MIL ET SPATIAUX TH 7864A FRAME TRANSFER CCD IMAGE SENSOR 576 x 550 PIXELS WITH ANTIBLOOMING Fully Compatible with CCIR TV Standard VD0 '•’r VS vOS A ®2M ®IM “"ìli

SK3239

Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
Contextual Info: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous

S-9301

Abstract: L6212 TS200n S9301 Proportional solenoid driver ts200n ilr3 T06A
Contextual Info: T'ìS'ìSi? DGEEObM □ 30E ]> —# k7# S C S -T H O M S O N R a D ^ io m L U o ir^ o K iD e s S G S-THOMSON L 6212 V 3 Z- HIGH CURRENT SOLENOID DRIVER P R ELIM IN A R Y DATA • HIGH VOLTAGE OPERATION UP TO 50 V ■ HIGH O UTPUT CURRENT CAPABILITY (UP TO 6 A)

tpa 1308

Abstract: 110B CB-210 TPA62A TPA68A TPA180B12
Contextual Info: O THOMSON SEMICONDUCTEURS TPA 62 A — ►270 A -12 or 18 TPA 62 B — 270 B -12 or 18 TRISIL TRISIL • V r m : 5 6 V —► 243V V BO m a* : 75 V — *-360 V l(BO) m ax :300 mA Bidirectional device used to telephone protection. lH = 120 m A w ith suffix 12

thomson image intensifier

Abstract: mpp 546 j diode vdr1
Contextual Info: SSE T> *îQ£bfl72 O O G O Ö ? ^ flbE ITHCH O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX THX 7395M FULL FIELD CCD IMAGE SENSOR 512x512 PIXELS - THOM SO N MIL ET S P A T I A U X i Thinned for backside illumination. i Very low dark current: 0.5 e-/pix.s at -40°C.

thomson ms 250

Abstract: INGaAS CCD thomson tr 62
Contextual Info: SSE D • ^02fc,fl?2 00011DM 4fiö ■ THCM THOMSON COMPOSANTS MILITAIRES ET SPATIAUX THX 7423A 150 PIXEL SWIR MULTIPLEXED LINEAR ARRAYS FOR SPECTROSCOPY APPLICATION THOMSON MIL ET SPATIAUX DESCRIPTION The THX 7423A is a module of 150 InGaAs photodiodes and

thomson tv circuit diagram

Abstract: 7864a 7866A 78G6A HC 4520 thomson tv thomson ccd
Contextual Info: SSE J> 102bß72 DG01030 O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX «THCM THOMSON NI L ET S P A T I A U X TH 7994 DRIVE CLOCK SEQUENCER FOR TH 7864A AND TH 7866A DESCRIPTION The TH 7994 drive clock sequencer and TV synchronization g e n e ra to r ca n be used w ith th e tw o fo llo w in g fra m e

TAA761

Abstract: Taa765 TAA861 TAA761 EQUIVALENT TAA781 TAA761 a TAA761CH A761C TAA766 taa762
Contextual Info: THOMSON SEMICONDUCTORS TAA761C TAA762M TAA765I OPEN COLLECTOR O UTPUT SINGLE OP-AM Ps These c irc u its are gen eral p u rp o se o p e ra tio n a l a m p lifie rs b u ilt o n a sin gle s ili­ con ch ip. T h e y p ro v id e h igh v o lta g e gain a nd an e xce lle n t te m p e ra tu re sta b ility.

EF68A00

Abstract: EF6800
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6800 MPU NMOS 8-BIT MICROPROCESSOR UNIT DESCRIPTION The EF 6800 is a m onolithic 8-bit microprocessor form ing the central control function fo r THOMSON COMPOSANTS MILITAIRES ET SPATIAUX 6800 family. Compatible w ith

Zener diode 83C 12

Abstract: diode zener 6V8 BZX C 55 8ZX83C BZX marking diode diode zener BZX 70 C 10 Zener diode 83C 24 bzx 85 zener zener diode b2x BZX83C diode zener 6V8 BZX C 83
Contextual Info: S G S— THOMSON _ SIC D £ O THOMSON-CSF DIV IS IO N S EM IC O N DUCTE UR S Q0Q247M 7 BZX83C2V4 — BZX83C75 - • ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages :